47 results on '"Yamanaka, Mitsuyuki"'
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2. High-quality SiGe films grown with compositionally graded buffer layers for solar cell applications
3. Light-induced annealing of hole trap states: A new aspect of light-induced changes in hydrogenated amorphous silicon
4. Characterization of heterojunctions in crystalline-silicon-based solar cells by internal photoemission
5. Spectroscopic Ellipsometry for the Characterization of the Morphology of Ultra-thin Thermal CVD Amorphous and Nanocrystalline Silicon Thin Films
6. Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films
7. Properties of Si nanowire devices fabricated by using an inorganic EB resist process
8. Control on the formation of Si nanodots fabricated by thermal annealing/oxidation of hydrogenated amorphous silicon.
9. Defects in plasma-deposited hydrogenated amorphous silicon prepared under visible light illumination.
10. Fabrication of hydrogenated amorphous Si/crystalline Si1−xGex(x≤ 0.84) heterojunction solar cells grown by solid source molecular beam epitaxy
11. Fabrication of 0.9 eV bandgap a-Si/c-Si1−xGex heterojunction solar cells
12. Fabrication of Si1−xGex heterojunction solar cells grown with stepwise graded buffer layers
13. Low-Temperature Back-Surface-Field Structures Applied to Crystalline Silicon Solar Cells: Two-Step Growth with Hydrogen Plasma Treatment for Improving the Reproducibility
14. MBE growth of crystalline SiGe thin films for solar cell applications with precisely controlled heterojunction
15. Very Low Temperature Epitaxial Growth of Silicon Films for Solar Cells
16. Low Temperature Back-Surface-Field (BSF) Technology for Crystalline Silicon (c-Si) Thin Film Solar Cells Based on Heterojunctions between Boron-Doped P-Type Hydrogenated Amorphous Silicon and c-Si
17. Back-Surface-Field Effects at the Heterojunctions between Boron-Doped p-Type Hydrogenated Amorphous Silicon and Crystalline Silicon in Thin-Film Crystalline Silicon Solar Cells
18. Band Lineup at the Interface between Boron-Doped P-Type Hydrogenated Amorphous Silicon and Crystalline Silicon Studied by Internal Photoemission
19. Evolution of an amorphous silicon network from silicon paracrystallites studied by spectroscopic ellipsometry
20. Response to comment on “Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films” [J. Appl. Phys. 90, 1067 (2001)]
21. Stress as a governing parameter to control the crystallization of amorphous silicon films by thermal annealing
22. Fine crystalline grain model for the determination of the morphology of ultrathin amorphous silicon films
23. Spectroscopic Ellipsometry for the Characterization of the Morphology of Ultra-thin Thermal CVD Amorphous and Nanocrystalline Silicon Thin Films.
24. Spectroscopic Ellipsometry Studies on Ultrathin Hydrogenated Amorphous Silicon Films Prepared by Thermal Chemical Vapor Deposition
25. Effects of Film Quality of Hydrogenated Amorphous Silicon Grown by Thermal Chemical-Vapor-Depositon on Subsequent in-situ Hydrogenation Processes
26. Spectroscopic Ellipsometry for the Identification of Paracrystallites in the Ultra-Thin Thermal CVD Hydrogenated Amorphous Silicon Films
27. Spectroscopic Ellipsometry for the Characterization of the Morphology of Ultra-thin Thermal CVD Amorphous and Nanocrystalline Silicon Thin Films
28. Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process
29. Electrical properties of Si nanocrystals embedded in an ultrathin oxide
30. Relationship between Carrier Diffusion Length and Light-Induced Defects in Hydrogenated Amorphous Silicon
31. In Situ Hydrogenation of Amorphous Silicon Prepared by Thermal Decomposition of Disilane
32. Effects of Optical Confinement in Textured Antireflection Coating using ZnO Films for Solar Cells
33. Light-Induced Changes in Plasma-Deposited Hydrogenated Amorphous Silicon Prepared under Visible-Light Illumination Studied by a Constant Photocurrent Method
34. Constant-Photocurrent-Method (CPM) Studies on Light-Induced Changes in Hydrogenated Amorphous Silicon
35. Origin of the Reduction of Light-Induced Changes in Plasma-Deposited Hydrogenated Amorphous Silicon Prepared under Visible-Light Illumination
36. Effect of Visible-Light Illumination on the Growing Surface of an a-Si:H Film in Plasma Decomposition of SiH4
37. Minority Carrier Lifetime in Laser Recrystallized Polysilicon
38. Re-Examination of Carrier Trapping Models for Light-Induced Changes in Hydrogenated Amorphous Silicon
39. Sb-Doped SnO2 films deposited by the CMD (chemical mist deposition) method
40. Raman Scattering Studies on Hydrogenated Amorphous Silicon Prepared under High Deposition Rate Conditions
41. Atomic Migration of Metals in the Interfaces of Au-Si and Ni-Si for Crystalline and Amorphous Si Observed by 40 MeV-O5+ Ion Backscattering
42. SHINKU
43. Photo-induced effects in hydrogenated amorphous silicon P-I-N diodes
44. Sb-Doped SnO 2 films deposited by the CMD (chemical mist deposition) method
45. Effects of Film Quality of Hydrogenated Amorphous Silicon Grown by Thermal Chemical-Vapor-Depositon on Subsequent in-situHydrogenation Processes
46. In SituHydrogenation of Amorphous Silicon Prepared by Thermal Decomposition of Disilane
47. Atomic Migration of Metals in the Interfaces of Au-Si and Ni-Si for Crystalline and Amorphous Si Observed by 40 MeV-O5+Ion Backscattering
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