17 results on '"Yan, Siao-Cheng"'
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2. Study of Ferroelectric HfO2-ZrO2 Superlattice Poly-Si Junctionless Nanosheet Gate-all-around Field-effect-transistor and CMOS Inverter
3. Investigation of HfO2/ZrO2 Superlattice Dielectric and High-k AION Interfacial Layer on Ferroelectric FinFET
4. Green Laser Crystallized Poly-Si Thin-film Transistor and CMOS Inverter using Hfo2-Zro2 Superlattice Gate Insulator and Microwave Annealing for BEOL Applications
5. Vertically Stacked Ge Diamond-shape Nanowires GAAFET with Ferroelectric HZO
6. 3-D Self-Aligned Stacked Ge Nanowire pGAAFET on Si nFinFET of Single Gate CFET
7. Multilevel Cell Ferroelectric HfZrO FinFET With High Speed and Large Memory Window Using AlON Interfacial Layer
8. Threshold Voltage Adjustment by Varying Ge Content in SiGe p-Channel for Single Metal Shared Gate Complementary FET (CFET)
9. Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO2 for Sub-60-mV/Decade Subthreshold Slope for Low Power Application
10. Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-all-around Field-effect-transistor with Self-induced Ferroelectric Ge doped HfO2
11. Tightly Stacked 3D Diamond-Shaped Ge Nanowire Gate-All-Around FETs With Superior nFET and pFET Performance
12. High Speed and Large Memory Window Ferroelectric HfZrO₂ FinFET for High-Density Nonvolatile Memory
13. Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO 2 for Sub-60-mV/Decade Subthreshold Slope for Low Power Application.
14. Comprehensive Study of Inversion and Junctionless Ge Nanowire Ferroelectric HfZrO Gate-All-Around FETs Featuring Steep Subthreshold Slope with Transient Negative Capacitance
15. Germanium Twin-Transistor Nonvolatile Memory With FinFET Structure
16. Low Ge Content Ultra-Thin Fin Width (5nm) Monocrystalline SiGe n-Type FinFET With Low Off State Leakage and High ION/IOFF Ratio
17. Fabrication and Characterization of Stacked Poly-Si Nanosheet With Gate-All-Around and Multi-Gate Junctionless Field Effect Transistors
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