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The emergence of bulk carbon ferromagnetism is long-expected over years. At nanoscale, carbon ferromagnetism was detected by analyzing the magnetic edge states via scanning tunneling microscopy(STM), and its origin can be explained by local redistribution of electron wave function. In larger scale, carbon ferromagnetism can be created by deliberately producing defects in graphite, and detected by macroscopic technical magnetization. Meanwhile, it becomes crucial to determine that the detected magnetization is originated from carbon rather than from magnetic impurities. One solution is X-ray magnetic circular dichroism (XMCD). Nonetheless, a reproducible, full section of XMCD spectrum across C-1s absorption energy has not appeared yet, which should be decisive for assuring the indisputable existence of bulk carbon ferromagnetism. Besides, the lack of direct observation on the atomic structure of the ferromagnetic carbon leaves the structural origin of its ferromagnetism still in mist. In this work, for detecting bulk carbon ferromagnetism, we managed to grow all-carbon film consisting of vertically aligned graphene multi-edge (VGME), which wove into a three-dimensional hyperfine-porous network. Magnetization (M-H) curves and XMCD spectra co-confirmed bulk carbon ferromagnetism of VGME at room temperature, with the average unit magnetic momentum of ~0.0006 miuB/atom. The influence of magnetic impurities on magnetization was excluded by both absorption spectra and inductively coupled plasma mass spectrometry measurements. The spin transfer behavior also verified the long-range and robust feature of the bulk carbon ferromagnetism. Our work provides direct evidence of elementary resolved bulk carbon ferromagnetism at room temperature and clarifies its origin from pi-electrons at graphene edges.

The coexistence of antiferromagnetic and ferromagnetic order at room temperature in single-phase van der Waals materials, particularly within the two-dimensional limit, has attracted significant research interest. Nonetheless, such materials are rare. In this work, we introduce an itinerant van der Waals antiferromagnet (Fe0.56Co0.44)5GeTe2, where the ferromagnetic order of its exfoliated flakes remains discernible up to room temperature, extending down to the monolayer limit. A notable phenomenon observed is the evident odd-even layer-number effect at high temperature (e.g., T = 150 K). Such behaviour can be expounded by a linear-chain model. Of particular interest is the robust ferromagnetic order observed in even-layer flakes at low temperature (e.g., T = 2 K), which could potentially be attributed to spin-polarized defects. The intricate interplay among magnetic field strength, layer number, and temperature gives rise to a diverse array of phenomena, holding promise not only for new physics but also for practical applications., Comment: 5 figures

Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenge by conventional layer-by-layer stacking or self-assembling. Here, we report the creation of morphotropic grain boundaries (GBs) in laterally interconnected cobaltite homostructures. Single-crystalline substrates and suspended ultrathin freestanding membranes provide independent templates for coherent epitaxy and constraint on the growth orientation, resulting in seamless and atomically sharp GBs. Electronic states and magnetic behavior in hybrid structures are laterally modulated and isolated by GBs, enabling artificially engineered functionalities in the planar matrix. Our work offers a simple and scalable method for fabricating unprecedented innovative interfaces through controlled synthesis routes as well as provides a platform for exploring potential applications in neuromorphics, solid state batteries, and catalysis., Comment: 38 pages, 4 main figures

Emergent phenomena at heterointerfaces are directly associated with the bonding geometry of adjacent layers. Effective control of accessible parameters, such as the bond length and bonding angles, offers an elegant method to tailor competing energies of the electronic and magnetic ground states. In this study, we construct unit thick syntactic layers of cobaltites within a strongly tilted octahedral matrix via atomically precise synthesis. The octahedral tilt patterns of adjacent layers propagate into cobaltites, leading to a continuation of octahedral tilting while maintaining significant misfit tensile strain. These effects induce severe rumpling within an atomic plane of neighboring layers triggers the electronic reconstruction between the splitting orbitals. First-principles calculations reveal that the cobalt ions transits to a higher spin state level upon octahedral tilting, resulting in robust ferromagnetism in ultrathin cobaltites. This work demonstrates a design methodology for fine-tuning the lattice and spin degrees of freedom in correlated quantum heterostructures by exploiting epitaxial geometric engineering., Comment: 18 pages, 5 figures

Heterointerfaces have led to the discovery of novel electronic and magnetic states because of their strongly entangled electronic degrees of freedom. Single-phase chromium compounds always exhibit antiferromagnetism following the prediction of Goodenough-Kanamori rules. So far, exchange coupling between chromium ions via hetero-anions has not been explored and the associated quantum states is unknown. Here we report the successful epitaxial synthesis and characterizations of chromium oxide (Cr2O3)-chromium nitride (CrN) superlattices. Room-temperature ferromagnetic spin ordering is achieved at the interfaces between these two antiferromagnets, and the magnitude of the effect decays with increasing layer thickness. First-principles calculations indicate that robust ferromagnetic spin interaction between Cr3+ ions via anion-hybridizations across the interface yields the lowest total energy. This work opens the door to fundamental understanding of the unexpected and exceptional properties of oxide-nitride interfaces and provides access to hidden phases at low-dimensional quantum heterostructures., Comment: 21 pages, 4 figures

Most oscillating reactions (ORs) happen in solutions. Few existing solid-based ORs either happen on solid/gas (e.g., oxidation or corrosion) or solid/liquid interfaces, or at the all-solid interfaces neighboring to metals or ionic conductors (e.g., electrolysis or electroplate). We report in this paper a new type of all-solid based OR that happens at the insulator (amorphous SiO$_2$)/semiconductor (Si) interface with the interfacial point defects as the oscillating species. This OR is the first example of the point-defect coupled ORs (PDC-ORs) proposed by H. Schmalzried et al. and J. Janek et al. decades ago. We use proton implantation as the driving force of the oscillation, and employ techniques common in semiconductor device characterization to monitor the oscillation in situ. This approach not only overcomes the difficulties associated with detecting reactions in solids, but also accurately measure the oscillating ultra-low concentration ($10^{10}\sim10^{11}$ cm$^{-2}$) of the interfacial charged point-defects. We propose a mechanism for the reported PDC-OR based on the Brusselator model by identifying the interfacial reactions., Comment: 57 pages, 12 figures

VO2 material is promising for developing energy-saving "smart window", owing to its thermochromic property induced by metal-insulator transition (MIT). However, its practical application is greatly limited by the relatively high critical transition temperature (~68oC), low luminous transmittance (<60%) and poor solar energy regulation ability (<15%). Here we developed a reversible and non-volatile electric-field control on the MIT of monoclinic VO2 film. With a solid electrolyte layer assisted gating treatment, we modulated the insertion/extraction of hydrogens into/from VO2 lattice at room temperature, causing tri-state phase transitions accompanied with controllable transmission adjustment. The dramatic increase of visible/infrared transmittance during the phase transition from the metallic (lightly H-doping) to insulating (heavily H-doping) phase leads to an increased solar energy regulation ability up to 26.5%, while keep 70.8% visible-luminous transmittance. These results beat all previous records and even exceeded the theoretical limit for traditional VO2 smart window, removing intrinsic disadvantages of VO2 for energy-saving utilizations. Our findings not only demonstrated an electric-field controlled phase modulation strategy, but also open the door for high-performance VO2-based smart window applications., Comment: 19 pages, 5 figures