Search

Your search keyword '"Yan, Xingzhao"' showing total 97 results
Start Over Author "Yan, Xingzhao"
97 results on '"Yan, Xingzhao"'

1. Ultracompact programmable silicon photonics using layers of low-loss phase-change material Sb$_2$Se$_3$ of increasing thickness

Author

Blundell, Sophie, Radford, Thomas, Ajia, Idris A., Lawson, Daniel, Yan, Xingzhao, Banakar, Mehdi, Thomson, David J., Zeimpekis, Ioannis, and Muskens, Otto L.

Subjects
Physics - Optics, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Abstract

High-performance programmable silicon photonic circuits are considered to be a critical part of next generation architectures for optical processing, photonic quantum circuits and neural networks. Low-loss optical phase change materials (PCMs) offer a promising route towards non-volatile free-form control of light. Here, we exploit direct-write digital patterning of waveguides using layers of the PCM Sb$_2$Se$_3$ with a thickness of up to 100 nm, demonstrating the ability to strongly increase the effect per pixel compared to previous implementations where much thinner PCM layers were used. We exploit the excellent refractive index matching between Sb$_2$Se$_3$ and silicon to achieve a low-loss hybrid platform for programmable photonics. A five-fold reduction in modulation length of a Mach-Zehnder interferometer is achieved compared to previous work using thin-film Sb$_2$Se$_3$ devices, decreased to 5 $\mu$m in this work. Application of the thicker PCM layers in direct-write digital programming of a multimode interferometer (MMI) shows a three-fold reduction of the number of programmed pixels to below 10 pixels per device. The demonstrated scaling of performance with PCM layer thickness is important for establishing the optimum working range for hybrid silicon-PCM devices and holds promise for achieving ultracompact programmable photonic circuits., Comment: 24 pages, 5 figures

Published
2024

2. High speed silicon photonic electro-optic Kerr modulation

Author

Peltier, Jonathan, Zhang, Weiwei, Virot, Leopold, Lafforgue, Christian, Deniel, Lucas, Marris-Morini, Delphine, Aubin, Guy, Amar, Farah, Tran, Denh, Yan, Xingzhao, Littlejohns, Callum G., Alonso-Ramos, Carlos, Thomson, David J., Reed, Graham, and Vivien, Laurent

Subjects
Physics - Optics, Physics - Applied Physics
Abstract

Electro-optic silicon-based modulators contribute to ease the integration of high-speed and low-power consumption circuits for classical optical communications or quantum computers. However, the inversion symmetry in the silicon crystal structure inhibits the use of Pockels effect. An electric field-induced optical modulation equivalent to a Pockels effect can nevertheless be achieved in silicon by the use of DC Kerr effect. Although some theoretical and experimental studies have shown its existence in silicon, the DC Kerr effect in optical modulation have led to a negligible contribution so far. This paper reports demonstration of high-speed optical modulation based on the electric field-induced linear electro-optic effect in silicon PIN junction waveguides. The relative contributions of both plasma dispersion and Kerr effects are quantified and we show that the Kerr induced modulation is dominant when a high external DC electric field is applied. Finally, the high-speed modulation response is analyzed and eye diagram up to 100 Gbits/s in NRZ format are obtained. This work demonstrates high speed modulation based on Kerr effect in silicon, and its potential for low loss, quasi-pure phase modulation., Comment: 7+6 pages, 5+4 figures

Published
2023

4. Non-volatile programmable silicon photonics using an ultralow loss Sb$_2$Se$_3$ phase change material

Author

Delaney, Matthew, Zeimpekis, Ioannis, Du, Han, Yan, Xingzhao, Banakar, Mehdi, Thomson, David J., Hewak, Daniel W., and Muskens, Otto L.

Subjects
Physics - Optics, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science, Physics - Applied Physics
Abstract

Adaptable, reconfigurable and programmable are key functionalities for the next generation of silicon-based photonic processors, neural and quantum networks. Phase change technology offers proven non-volatile electronic programmability, however the materials used to date have shown prohibitively high optical losses which are incompatible with integrated photonic platforms. Here, we demonstrate the capability of the previously unexplored material Sb$_2$Se$_3$ for ultralow-loss programmable silicon photonics. The favorable combination of large refractive index contrast and ultralow losses seen in Sb$_2$Se$_3$ facilitates an unprecedented optical phase control exceeding 10$\pi$ radians in a Mach-Zehnder interferometer. To demonstrate full control over the flow of light, we introduce nanophotonic digital patterning as a conceptually new approach at a footprint orders of magnitude smaller than state of the art interferometer meshes. Our approach enables a wealth of possibilities in high-density reconfiguration of optical functionalities on silicon chip., Comment: 22 pages, 11 figures

Published
2021

7. Inverse design of structural color: finding multiple solutions via conditional generative adversarial networks

Author

Dai Peng, Sun Kai, Yan Xingzhao, Muskens Otto L., de Groot C. H. (Kees), Zhu Xupeng, Hu Yueqiang, Duan Huigao, and Huang Ruomeng

Subjects
deep learning, fabry–pérot cavity, generative adversarial networks, inverse design, one-to-many problem, structural color, Physics, QC1-999
Abstract

The “one-to-many” problem is a typical challenge that faced by many machine learning aided inverse nanophotonics designs where one target optical response can be achieved by many solutions (designs). Although novel training approaches, such as tandem network, and network architecture, such as the mixture density model, have been proposed, the critical problem of solution degeneracy still exists where some possible solutions or solution spaces are discarded or unreachable during the network training process. Here, we report a solution to the “one-to-many” problem by employing a conditional generative adversarial network (cGAN) that enables generating sets of multiple solution groups to a design problem. Using the inverse design of a transmissive Fabry–Pérot-cavity-based color filter as an example, our model demonstrates the capability of generating an average number of 3.58 solution groups for each color. These multiple solutions allow the selection of the best design for each color which results in a record high accuracy with an average index color difference ΔE of 0.44. The capability of identifying multiple solution groups can benefit the design manufacturing to allow more viable designs for fabrication. The capability of our cGAN is verified experimentally by inversely designing the RGB color filters. We envisage this cGAN-based design methodology can be applied to other nanophotonic structures or physical science domains where the identification of multi-solution across a vast parameter space is required.

Published
2022
Full Text
View/download PDF

8. Beyond 300Gb/s from an integrated single-channel silicon photonics modulator driver combination

Author

Li, Ke, primary, Thomson, David J., additional, Zhou, Lingjun, additional, Zhang, Weiwei, additional, Liu, Shenghao, additional, Cao, Wei, additional, Littlejohns, Callum G., additional, Yan, XingZhao, additional, Ebert, Martin, additional, Banakar, Mehdi, additional, Tran, Dehn, additional, Meng, Fanfan, additional, Wang, Lei, additional, He, Zhixue, additional, Zhang, Fan, additional, Yu, Shaohua, additional, and Reed, Graham T., additional

Published
2024
Full Text
View/download PDF

9. The next phase of all silicon electro-optical modulators

Author

Zhang, Weiwei, primary, Ebert, Martin, additional, Li, Ke, additional, Chen, Bigeng, additional, Yan, Xingzhao, additional, Du, Han, additional, Banakar, Mehdi, additional, Tran, Dehn T., additional, Littlejohns, Callum G., additional, Reed, Graham, additional, and Thomson, David, additional

Published
2024
Full Text
View/download PDF

10. Ytterbium doped tantalum pentoxide nanowire waveguide lasers

Author

Yan, Xingzhao, Charlton, Martin, Pearce, Stuart J., De Groot, Cornelis, Morgan, Katrina, Huang, Ruomeng, and Ye, Sheng

Subjects
621.36
Abstract

Ytterbium (Yb) has been widely studied in several host materials and device forms due to its broad gain bandwidth, long excited-state lifetime, and simple quasi-three energy level structure. Yb doped tantalum pentoxide (Yb:Ta2O5) waveguides are favorable for laser applications since Ta2O5 has promising optical properties including high refractive index (≈2.1), wide transmission spectrum (350 nm to 9 μm) and suitability to host rare-earth ions. In this work, a nanowire waveguide design with taper and coupler section was demonstrated. Thin Yb:Ta2O5 films were fabricated by plasma assisted reactive magnetron sputtering (PARMS) from high purity (99.999%) Ta metal and Yb metal targets at low temperature (< 70°C). The PARMS process allows Yb doping concentration to be easily adjusted, leading to a new flexible deposition method for not only Yb:Ta2O5 but other doped materials. Nanoscale waveguide fabrication processes of strip loaded and buried channel waveguides on SiO2 using electron beam lithography and inductively couple plasma reactive ion etching (RIE-ICP) were demonstrated and the first Yb:Ta2O5 anisotropic RIE-ICP etching process was developed. Buried channel waveguide in polymer fabricated by nano-imprint was also demonstrated, offering low-cost and mass production of nanoscale waveguide. A 6.7 mm long strip loaded Yb:Ta2O5 nanowire waveguide laser with 1.25 atomic percentage Yb doping concentration was demonstrated with a laser cavity formed of bare polished end facets only, with 12% Fresnel reflectivity. Single mode lasing was observed between 1015 nm and 1030 nm in strip loaded waveguides with nanowire of 400 nm width when end pumped by a 977 nm laser diode. The launched power threshold and the slope efficiency were measured to be ≈ 12 mW and ≈ 38%. The lasing wavelength of such waveguide can be switched by tuning the pump coupling position at the coupler section, implying a potential tuning mechanism. The results presented in this work demonstrate the capability of Yb:Ta2O5 for being a waveguide laser, show the great potential for being used in mass-producible, CMOS compatible integrated optical circuits.

Published
2017

11. Advancing All Silicon MOSCAP Ring Modulators With Ultra-Thin Sub-5 nm Insulator

Author

Chang, Tzu-Yun, Ebert, Martin, Li, Ke, Zhu, Junbo, Yan, Xingzhao, Du, Han, Banakar, Mehdi, Tran, Dehn T., Littlejohns, Callum G., Scofield, Adam, Yu, Guomin, Shafiiha, Roshanak, Zilkie, Aaron, Reed, Graham T., Thomson, David J., and Zhang, Weiwei

Abstract

We demonstrate silicon/SiO$_{2}$/polysilicon lateral MOS-Capacitor (MOSCAP) RRM operating above 50 GHz with modulation amplitude enhanced by a large plasma absorption within the MOS junction. A MOSCAP ring resonator modulator (RRM) model has been built using Lumerical software, in which the plasma effect is defined by adopting a reported superlinear rather than linear plasma absorption equation, which aligns well with our experimental results. The performance of the MOSCAP RRMs has been analyzed with different thicknesses of insulator oxide ($t_{\text{ox}}$). The modulation performance is enhanced with thinner $t_{\text{ox}}$ down to 3 nm, giving a lower insertion loss and larger optical modulation amplitude (OMA) when benchmarked with a conventional depletion type RRM with a low $V_{\pi }L$ of 2.6–4.0 V$\cdot$ mm under a bias voltage $V_{\text{b}}$ 0–3 V. High-speed operation of the MOSCAP RRM with radius 15 μm demonstrated an average power insertion loss (IL$_{\text{ave}}$) of 3.5dB and one level insertion loss (IL$_{\text{one}}$) of 2dB for achieving a 3dB dynamic ER at a data rate of 30 Gb/s and bit-error-rate (BER) $&lt;\! 1 \times 10^{-12}$. The same performance is possible at 50 Gb/s when feed-forward-equalization is enabled on the detection side. We also show the possibility of operating at 224 Gb/s using 4-level pulse amplitude modulation (PAM-4) for a MOSCAP RRM incorporating two active segments. The MOSCAP RRM provides an attractive solution to surpass the performance of the conventional depletion-type RRM, for which future performance scaling is limited with increased doping density towards $1 \times 10^{19}$ cm$^{-3}$.

Published
2024
Full Text
View/download PDF

12. High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy.

Author

Mtunzi, Makhayeni, Jia, Hui, Hou, Yaonan, Yu, Xueying, Zeng, Haotian, Yang, Junjie, Yan, Xingzhao, Skandalos, Ilias, Deng, Huiwen, Park, Jae-Seong, Li, Wei, Li, Ang, El Hajraoui, Khalil, Ramasse, Quentin, Gardes, Frederic, Tang, Mingchu, Chen, Siming, Seeds, Alwyn, and Liu, Huiyun

Subjects
MOLECULAR beam epitaxy, GERMANIUM, EPITAXY, BUFFER layers, SILICON
Abstract

High-quality and low-defect-density germanium (Ge) buffer layers on silicon (Si) substrates have long been developed for group IV and III–V devices by suppressing defect propagation during epitaxial growth. This is a crucial step for the development of highly efficient photonic devices on Si substrates. Patterned silicon substrates have increasingly been employed for their ability to restrict and hinder the motion of defects. In this work, we demonstrate the effectiveness of an optimised two-step growth recipe structure on a (111)-faceted V-groove silicon substrate with a 350 nm flat ridge. This strategy successfully reduces the threading dislocation (TD) density while growing a 1 μ m Ge buffer layer via molecular beam epitaxy. As a result, a high-quality buffer is produced with a low TD density on the order of 107 cm−2 and a surface roughness below 1 nm. [ABSTRACT FROM AUTHOR]

Published
2024
Full Text
View/download PDF

13. Universal Silicon Ring Resonator for Error Free Transmission Links

Author

Zhang, Weiwei, primary, zhu, junbo, additional, Li, Ke, additional, Pant, Bharat, additional, EBERT, MARTIN, additional, Yan, Xingzhao, additional, Banakar, Mehdi, additional, Tran, Denh, additional, Littlejohns, Callum, additional, Gan, Fuwan, additional, Reed, Graham, additional, and Thomson, David, additional

Published
2023
Full Text
View/download PDF

16. High speed silicon photonic electro-optic Kerr modulation

Author

peltier, Jonathan, primary, Zhang, Weiwei, additional, Virot, Leopold, additional, Lafforgue, Christian, additional, Deniel, Lucas, additional, Marris-Morini, Delphine, additional, AUBIN, GUY, additional, Amar, Farah, additional, Tran, Denh, additional, Yan, Xingzhao, additional, Littlejohns, Callum, additional, Alonso Ramos, Carlos, additional, Thomson, David, additional, Reed, Graham, additional, and Vivien, Laurent, additional

Published
2023
Full Text
View/download PDF

17. Group IV Mid-Infrared Photonic Devices and Applications

Author

Rowe, David J., primary, Reid, Lauren, additional, Wei, Chen, additional, Stirling, Callum J., additional, Mitchell, Colin J., additional, Du, Han, additional, Yan, Xingzhao, additional, Tran, Dehn T., additional, Wu, Yangbo, additional, Banakar, Mehdi, additional, Qi, Yanli, additional, Osman, Ahmed, additional, Li, Ke, additional, Penades, Jordi Soler, additional, Zhou, Longqi, additional, Groom, Kristian M., additional, Heffernan, Jon, additional, Littlejohns, Callum G., additional, Nedeljkovic, Milos, additional, and Mashanovich, Goran Z., additional

Published
2023
Full Text
View/download PDF

19. The superlinear carrier absorption enhanced silicon MOS micro-ring modulator

Author

Zhang, Weiwei, primary, Ebert, Martin, additional, Li, Ke, additional, Chen, Bigeng, additional, Yan, Xingzhao, additional, Du, Han, additional, Banakar, Mehdi, additional, Tran, Dehn T., additional, Littlejohns, Callum G., additional, Scofield, Adam, additional, Yu, Guomin, additional, Shafiiha, Roshanak, additional, Zilkie, Aaron, additional, Reed, Graham, additional, and Thomson, David J., additional

Published
2023
Full Text
View/download PDF

23. Wafer Bonding for Processing Small Wafers in Large Wafer Facilities

Author

Noori, Yasir J., Skandalos, Ilias, Yan, Xingzhao, Zhelev, Nikolay, Hou, Yaonan, and Gardes, Frederic

Abstract

Manufacturing semiconductor technologies in production facilities typically involves performing hundreds to thousands of steps in pipelines that can include hundreds of fabrication tools. However, semiconductor wafers can vary widely in size and cost depending on their constituent materials and desired applications. Hence, equipping all fabrication tools within a facility with capabilities for processing wafers of any dimension and material can impose high establishment and operation costs. In this work, we developed a method to process wafers of arbitrary sizes and materials within fabrication facilities that are designated for large wafers, while minimizing tool contamination from processing these wafers. We have shown that we can use an 8-in designated facility to fabricate integrated photonic waveguides and grating structures on smaller device wafers. This was achieved by etching a recess on the 8-in Si carrier wafer and developing a bonding technique to use the recess as a slot, in which the device wafer is bonded and exposed. The fabricated photonic devices were tested to confirm the suitability of our bonding method in lithography and etching processes. Beneficiaries of this work can widely vary between university researchers and industrial engineers who operate or manage cleanroom fabrication tools.

Published
2024
Full Text
View/download PDF

24. Flexible thin film optical solar reflectors with Ta2O5-based multimaterial coatings for space radiative cooling.

Author

Xiao, Wei, Dai, Peng, Singh, H. Johnson, Ajia, Idris A., Yan, Xingzhao, Wiecha, Peter R., Huang, Ruomeng, de Groot, C. H., Muskens, Otto L., and Sun, Kai

Subjects
SOLAR reflectors, OPTICAL reflectors, OPTICAL films, THIN films, SURFACE coatings, TANTALUM, SOLAR stills
Abstract

Optical Solar Reflectors (OSRs) combine low solar radiation absorption (α) and high broadband infrared emissivity (ε) and are applied to the external surface of spacecraft for its thermal management. Bulk glass OSR tiles are the incumbent, but ultra-lightweight and thin-film flexible OSR coatings are raising considerable interest for both space and terrestrial radiative cooling applications. In this work, a genetic algorithm combined with a transfer matrix method is used for the design and optimization of multimaterial thin-film OSRs for broadband radiative cooling. The algorithm simultaneously optimizes the spectral performance of the OSR at two parts of the wavelength spectrum, solar (0.3–2.5 μm) and thermal infrared (2.5–30 μm). The designed optimized OSR structure consists of 18 alternating layers of three materials, SiN, SiO2, and Ta2O5, on top of an Al mirror backreflector, with a total thickness of only 2.088 μm. The optimized multilayer stack contributes distributed Bragg reflections that reduce the residual solar absorption below that of an uncoated Al mirror. The optimized OSR is demonstrated experimentally on a 150 mm (6 in.) Si wafer and on a flexible polyimide substrate using a production level reactive sputtering tool. The fabricated thin film OSR shows good thermal-optical property with α = 0.11 and ε = 0.75 and achieves a net cooling power of 150.1 W/m2 under conditions of one sun total solar irradiance in space. The ultrathin coating fabricated using hard inorganic materials facilitates its integration onto flexible foils and enables large-scale manufacture of low-cost OSRs for broadband radiative cooling applications. [ABSTRACT FROM AUTHOR]

Published
2023
Full Text
View/download PDF

27. Enhanced efficiency thermo-optic phase-shifter by using multi-mode-interference device

Author

Pant Bharat, Zhang Weiwei, Tran Denh, Banakar Mehdi, Du Han, Yan Xingzhao, Littlejohns Callum G., Reed Graham T., and Thomson David J.

Subjects
Physics, QC1-999
Abstract

We demonstrate a method for power reduction in thermo-optic based Mach-Zehnder interferometer (MZI) by using the multimode region of a 2x2 Multi-Mode-Interferometer (MMI) as the modulation region. The light is circulated through the same multimode region twice and therefore utilizes the already present change in temperature leading to additional phase change, and an increase in efficiency. Power saving of 29.6% compared to a conventional thermo-optic phase shifter using single mode waveguides has been experimentally demonstrated. The reported devices show minimal insertion loss penalty compared to generic devices and do not add any additional fabrication complexity. Such an approach could also be applied to higher speed devices, for example those employing free carrier effects.

Published
2020
Full Text
View/download PDF

28. Up to 170Gbaud Optical Interconnects with Integrated CMOS-Silicon Photonics Transmitter

Author

Fang, Xiansong, primary, Li, Ke, additional, Thomson, David J., additional, Yang, Fan, additional, Liu, Shenghao, additional, Zhang, Weiwei, additional, Cao, Wei, additional, Littlejohns, Callum G., additional, Yan, XingZhao, additional, Ebert, Martin, additional, Banakar, Mehdi, additional, Tran, Dehn, additional, Meng, Fanfan, additional, Du, Han, additional, Reed, Graham T., additional, and Zhang, Fan, additional

Published
2022
Full Text
View/download PDF

29. 112G baud sub pJ/bit integrated CMOS-silicon photonics transmitter

Author

Li, Ke, primary, Thomson, David, additional, Liu, Shenghao, additional, Zhang, Weiwei, additional, Cao, Wei, additional, Littlejohns, Callum, additional, Yan, Xingzhao, additional, Ebert, Martin, additional, Banakar, Mehdi, additional, Tran, Dehn, additional, Meng, Fanfan, additional, Du, Han, additional, and Reed, Graham, additional

Published
2022
Full Text
View/download PDF

31. Harnessing plasma absorption in silicon MOS modulators

Author

Zhang, Weiwei, primary, Ebert, Martin, additional, Li, Ke, additional, Chen, Bigeng, additional, Yan, Xingzhao, additional, Du, Han, additional, Banakar, Mehdi, additional, Tran, Dehn, additional, Littlejohns, Callum, additional, Scofield, Adam, additional, Yu, Guomin, additional, Shafiiha, Roshanak, additional, Zilkie, Aaron, additional, Reed, Graham, additional, and Thomson, David, additional

Published
2022
Full Text
View/download PDF

32. MOSCAP and 3D taper

Author

Thomson, David J., primary, Zhang, Weiwei, additional, Ebert, Martin, additional, Li, Ke, additional, Reynolds, Jamie, additional, Chen, Bigeng, additional, Yan, Xingzhao, additional, Du, Han, additional, Banakar, Mehdi, additional, Tran, Ying, additional, Littlejohns, Callum, additional, and Reed, Graham, additional

Published
2022
Full Text
View/download PDF

33. Ge Ion Implanted Photonic Devices and Annealing for Emerging Applications

Author

Yu, Xingshi, primary, Chen, Xia, additional, Milosevic, Milan M., additional, Shen, Weihong, additional, Topley, Rob, additional, Chen, Bigeng, additional, Yan, Xingzhao, additional, Cao, Wei, additional, Thomson, David J., additional, Saito, Shinichi, additional, Peacock, Anna C., additional, Muskens, Otto L., additional, and Reed, Graham T., additional

Published
2022
Full Text
View/download PDF

34. Beyond 100Gb/s from a single silicon MZI modulator

Author

Reed, Graham T, primary, Liu, Shenghao, additional, Thomson, David J., additional, Zhang, Weiwei, additional, Meng, Fanfan, additional, Yan, Xingzhao, additional, Littlejohns, Callum G., additional, Du, Han, additional, Cao, Wei, additional, Banakar, Mehdi, additional, Ebert, Martin, additional, Jeyaselvan, Vadivukkarasi, additional, Tran, Dehn, additional, Petropoulos, Periklis, additional, and Ke, Li, additional

Published
2022
Full Text
View/download PDF

35. A Si Optical Modulator based on Fano-like Resonance

Author

Du, Han, Zhang, Weiwei, Cao, Wei, Thomson, David, Littlejohns, Callum, Yan, Xingzhao, Tran, Denh, Banakar, Mehdi, and Reed, Graham

Abstract

In this paper, we present an experimental demonstration of a Si optical modulator based on Fano-like resonance, which is the first of its kind in the literature. The Fano- like resonance is obtained through weak coupling between two optical resonators in the prototype device and a PN junction is designed for carrier-depletion type electro-refractive modulation. 20 Gb/s data rate on-off keying (OOK) is obtained experimentally on the prototype device. Compared with a ring resonator modulator with a similar optical resonance linewidth, a Fano-like resonance based modulator can potentially have a higher extinction ratio (ER) because the Fano-like resonance has an asymmetric spectrum line shape and the line shape on one side can be sharper than the Lorentz resonance line shape of a ring resonator.

Published
2021

36. Capacitive silicon optical modulators for high-speed and high-efficiency operation

Author

Thomson, David J., primary, Chen, Bigeng, additional, Zhang, Weiwei, additional, Ebert, Martin, additional, Chen, Xia, additional, Reynolds, Jamie, additional, Yan, Xingzhao, additional, Du, Han, additional, Banakar, Mehdi, additional, Tran, Ying, additional, Debnath, Kapil, additional, Littlejohns, Callum G., additional, Saito, Shin, additional, and Reed, Graham T., additional

Published
2021
Full Text
View/download PDF

37. Electronic-photonic convergence for 100Gb/s silicon photonics transmitters

Author

Li, Ke, primary, Thomson, David J., additional, Zhang, Weiwei, additional, Liu, Shenghao, additional, Yan, XingZhao, additional, Littlejohns, Callum G., additional, Banakar, Mehdi, additional, Du, Han, additional, Cao, Wei, additional, Meng, Fanfan, additional, Ebert, Martin, additional, Tran, Ying, additional, Petropoulos, Periklis, additional, and Reed, Graham T., additional

Published
2021
Full Text
View/download PDF

40. High-speed silicon Michelson interferometer modulator and streamlined IMDD PAM-4 transmission of Mach-Zehnder modulators for the 2 μm wavelength band

Author

Cao, Wei, primary, Liu, Shenghao, additional, Littlejohns, Callum G., additional, Thomson, David J., additional, Nedeljkovic, Milos, additional, Zhang, Weiwei, additional, Li, Ke, additional, Banakar, Mehdi, additional, Tran, Ying, additional, Yan, Xingzhao, additional, Du, Han, additional, Ren, Zhengqi, additional, Gardes, Frederic, additional, Reed, Graham T., additional, and Mashanovich, Goran Z., additional

Published
2021
Full Text
View/download PDF

41. CORNERSTONE’s silicon photonics rapid prototyping platforms: current status and future outlook

Author

Littlejohns, Callum, Rowe, David, Du, Han, Li, Ke, Zhang, Weiwei, Cao, Wei, Domínguez Bucio, Thalia, Yan, Xingzhao, Banakar, Mehdi, Tran, Denh, Liu, Shenghao, Meng, Fanfan, Chen, Bigeng, Qi, Yanli, Chen, Xia, Nedeljković, Miloš, Mastronardi, Lorenzo, Maharjan, Rijan, Bohora, Sanket, Dhakal, Ashim, Crowe, Iain, Khurana, Ankur, Balram, Krishna, Zagaglia, Luca, Floris, Francesco, O'Brien, Peter, Di Gaetano, Eugenio, Chong, Harold, Gardes, Frederic, Thomson, David, Mashanovich, Goran, Sorel, Marc, and Reed, Graham

Subjects
Hardware_INTEGRATEDCIRCUITS
Abstract

The field of silicon photonics has experienced widespread adoption in the datacoms industry over the past decade, with a plethora of other applications emerging more recently such as light detection and ranging (LIDAR), sensing, quantum photonics, programmable photonics and artificial intelligence. As a result of this, many commercial complementary metal oxide semiconductor (CMOS) foundries have developed open access silicon photonics process lines, enabling the mass production of silicon photonics systems. On the other side of the spectrum, several research labs, typically within universities, have opened up their facilities for small scale prototyping, commonly exploiting e-beam lithography for wafer patterning. Within this ecosystem, there remains a challenge for early stage researchers to progress their novel and innovate designs from the research lab to the commercial foundries because of the lack of compatibility of the processing technologies (e-beam lithography is not an industry tool). The CORNERSTONE rapid-prototyping capability bridges this gap between research and industry by providing a rapid prototyping fabrication line based on deep-UV lithography to enable seamless scaling up of production volumes, whilst also retaining the ability for device level innovation, crucial for researchers, by offering flexibility in its process flows. This review article presents a summary of the current CORNERSTONE capabilities and an outlook for the future.

Published
2020

42. Electrically erasable optical I/O for wafer scale testing of silicon photonic integrated circuits

Author

Yu, Xingshi, Chen, Xia, Milošević, Milan, Yan, Xingzhao, Saito, Shinichi, and Reed, Graham

Subjects
Hardware_INTEGRATEDCIRCUITS, Physics::Optics
Abstract

A technique for realizing electrically erasable photonics devices using micro-heaters for localized annealing of lattice defects in silicon is presented. The lattice defects have previously been introduced by ion implantation in order to cause a refractive index change. This technique can be used to fabricate electrically erasable on-chip directional couplers (DCs) and Mach-Zehnder Interferometer (MZI) switches. These devices can be used for wafer scale testing of photonics circuits, allowing testing of individual optical components in a complex photonic integrated circuit, or components for programmable optical circuits, whilst inducing negligible additional optical loss when erased electrically. In this paper, we report the designs and experimental results of fully, rapidly annealing of these devices.

Published
2020

43. Design Rules for Low Electrical Power Consumption in Nonlinear Silicon Waveguides with Active Carrier Removal

Author

Vitali, Valerio, primary, Liu, Hao, additional, Demirtzioglou, Iosif, additional, Lacava, Cosimo, additional, Bottrill, Kyle R. H., additional, Yan, Xingzhao, additional, Du, Han, additional, Banakar, Mehdi, additional, Tran, Dehn, additional, Littlejohns, Callum G., additional, Thomson, David J., additional, and Petropoulos, Periklis, additional

Published
2021
Full Text
View/download PDF

44. CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook

Author

Littlejohns, Callum G., primary, Rowe, David J., additional, Du, Han, additional, Li, Ke, additional, Zhang, Weiwei, additional, Cao, Wei, additional, Dominguez Bucio, Thalia, additional, Yan, Xingzhao, additional, Banakar, Mehdi, additional, Tran, Dehn, additional, Liu, Shenghao, additional, Meng, Fanfan, additional, Chen, Bigeng, additional, Qi, Yanli, additional, Chen, Xia, additional, Nedeljkovic, Milos, additional, Mastronardi, Lorenzo, additional, Maharjan, Rijan, additional, Bohora, Sanket, additional, Dhakal, Ashim, additional, Crowe, Iain, additional, Khurana, Ankur, additional, Balram, Krishna C., additional, Zagaglia, Luca, additional, Floris, Francesco, additional, O’Brien, Peter, additional, Di Gaetano, Eugenio, additional, Chong, Harold M.H., additional, Gardes, Frederic Y., additional, Thomson, David J., additional, Mashanovich, Goran Z., additional, Sorel, Marc, additional, and Reed, Graham T., additional

Published
2020
Full Text
View/download PDF

45. Electronic–photonic convergence for silicon photonics transmitters beyond 100 Gbps on–off keying

Author

Li, Ke, primary, Liu, Shenghao, additional, Thomson, David J., additional, Zhang, Weiwei, additional, Yan, Xingzhao, additional, Meng, Fanfan, additional, Littlejohns, Callum G., additional, Du, Han, additional, Banakar, Mehdi, additional, Ebert, Martin, additional, Cao, Wei, additional, Tran, Dehn, additional, Chen, Bigeng, additional, Shakoor, Abdul, additional, Petropoulos, Periklis, additional, and Reed, Graham T., additional

Published
2020
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results