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Hemorrhagic fever with renal syndrome (HFRS), a natural epidemic disease caused by hantavirus (HV), is one of the viral diseases that pose a major threat to our health. Considering the increasing number of atypical-onset cases reported in some countries, it is important to be familiar with the symptoms of HFRS and the signs of HV infection. This report describes the case of a 55-year-old man with complaints of fever, vomiting, and diarrhea. His symptoms showed no significant improvement after routine anti-infective, antipyretic, and other symptomatic supportive treatments administered at a local clinic. During these treatments, the patient had progressive oliguria; after 3 days, he also developed multiple organ failures, such as the liver and kidney, and was examined for positive serum IgM antibodies to hemorrhagic fever during treatment at our hospital. The patient was finally diagnosed with HFRS followed by multiple organ failure. After antiviral therapy, including ribavirin, piperacillin, and tazobactam, continuous renal replacement therapy, fluid metabolism adjustment, and related supportive therapy were administered, which improved his liver and kidney function. He was discharged on the 25th day after hospitalization. It is difficult to manage patients who develop multiple organ failure after HFRS. Moreover, this condition is rare in clinical settings, with fever being the initial indication. For diseases with unknown origin such as refractory fever and diarrhea, it is crucial to differentiate them from common pathogenic infection and HV infections to provide timely treatment that improves the prognosis of patients.

We propose a comb-locked multi-channel transmitter with high-speed VCSELs injection-locked by an optical frequency comb. VCSEL dynamics are analyzed with various injection parameters including number of comb tones, frequency detuning, and injection ratio. We evaluate the performance of filtering and amplification effect when multiple comb tones injection into single VCSEL and estimate the transmission performance considering the reflection from VCSEL. Compared to intrinsic parameters of VCSEL, a 2-fold increase in frequency response and a $2.6\times 10^4$ -fold reduction in linewidth have been verified experimentally when the bandwidth-limited VCSEL locked to an incident comb line. 14-Gb/s single-lane transmission is demonstrated through 20 km single-mode fiber based on a 3.4-GHz VCSEL without any dispersion compensation. The similar performance can be achieved for all generated 25 comb tones, verifying a potential high-capacity transmitter with distinct feature of two-dimensional VCSELs.

Record 11 Gb/s LWIR FSO transmission is demonstrated with a 9.6-µm directly-modulated QCL and a fully passive QCD without cooling, surpassing the previous bitrate record of DM-QCL-based FSO in this spectral window by 4 times.

High bitrate mid-infrared links using simple (NRZ) and multi-level (PAM-4) data coding schemes have been realized in the 8 µm to 14 µm atmospheric transparency window. The free space optics system is composed of unipolar quantum optoelectronic devices, namely a continuous wave quantum cascade laser, an external Stark-effect modulator and a quantum cascade detector, all operating at room-temperature. Pre- and post-processing are implemented to get enhanced bitrates, especially for PAM-4 where inter-symbol interference and noise are particularly detrimental to symbol demodulation. By exploiting these equalization procedures, our system, with a full frequency cutoff of 2 GHz, has reached transmission bitrates of 12 Gbit/s NRZ and 11 Gbit/s PAM-4 fulfilling the 6.25 % overhead hard-decision forward error correction threshold, limited only by the low signal-to-noise ratio of our detector.

Granulosane A (1), a new C27 bishomoscalarane sesterterpenoid with a rare 6/6/6/8 tetracyclic skeleton, together with eight additional new C27 bishomoscalarane sesterterpenes (2, 8–14) and five new...

Measurements of beam stability for mid-infrared (IR)-emitting quantum cascade lasers (QCLs) are important for applications that require the beam to travel through air to remote targets, such as free-space communication links. We report beam-quality measurement results of narrow-ridge, 4.6 µm-emitting buried-heterostructure (BH) QCLs fabricated using ICP etching and HVPE regrowth. Beam-quality measurements under QCW operation exhibit M2

Scaling the coherent power of mid-infrared (IR)-emitting quantum cascade lasers (QCLs) to the multi-watt range remains an important objective for applications where the laser beam needs to travel through air to remote targets, such as freespace communication links. For such applications requiring long-range pointing accuracy, measurements of beam stability are also important. We present beam-quality measurement results of narrow-ridge (4-5 μm), 4.6 μm-emitting buriedheterostructure (BH) QCLs. A 40-stage, step-tapered active-region (STA) structure was grown by MOCVD, and ICP etching was used to make deep ridges. InP:Fe was preferentially regrown in the field regions by using an SiO2 mask for ridge etching and Hydride Vapor Phase Epitaxy (HVPE). The HVPE process is attractive for selective regrowth, since high growth rates (0.2-0.3 μm/min) can be utilized, and highly planar top surfaces can readily be obtained. HVPE regrowth has been previously employed for BH devices of MBE-grown QCL ridges, but beam-stability measurements were not reported. HR-coated, 7.5 mm-long devices were measured under QCW operation (100 μsec pulse width, 0.5%-10% duty cycle) – very good beam quality factors, M2 < 1.2, were observed for both 4 μm and 5 μm ridge widths, but the narrower ridge exhibited better pointing stability. Collimated 5 μm-wide BH devices displayed some small degree of centroid motion with increasing power (< 0.125 mrad). This corresponds to a targeting error of ~1.25 cm over a distance of 100 m. Significantly improved lateral-beam stability was observed for narrower ridge width, although at the expense of reduced output power.

In lung adenocarcinoma, loss of p53 and PTEN in tumors are associated with decreased response to chemotherapy and decreased survival. A means to pharmacologically upregulate p53 and PTEN protein expression could improve the prognosis of patients with p53- and PTEN-deficient tumors. In the present study we revealed that vascular endothelial growth factor receptor 3 (VEGFR3) inhibition in lung adenocarcinoma cells was associated with improved expression levels of both p53 and PTEN in the tumor-associated macrophage (TAM) microenvironment. Inhibition of VEGFR3 in lung adenocarcinoma cells was associated with growth arrest and decreased migration and invasion. The upregulation of p53 and PTEN protein expression after VEGFR3 inhibition decreased chemotherapy resistance and improved chemosensitivity in co-cultured A549 cells in which p53 and PTEN expression were decreased. Finally, we demonstrated that TAMs promoted the expression of VEGF-C and its receptor VEGFR3. Western blot analysis revealed the co-cultured A549 cells with TAMs are a primary source of VEGF-C and VEGFR3 in the tumor microenvironment. Our studies revealed that VEGFR3 inhibition may be a pharmacological means to upregulate p53 and PTEN protein expression and improve the outcome of patients with p53- and PTEN-deficient tumors.

Quantum cascade lasers (QCLs) are the sources of choice for many laser-based applications in the mid-infrared region. Because of the unique 2D in-plane coupling mechanism, a photonic crystal (PhC)-QCL [1] has superior advantages on mode selection, surface emission, and beam control. In this work, we present a large-area (1.5 mm × 1.5 mm) PhC-QCL operating under pulsed mode at room temperature (289 K). The surface-emitting peak power is as high as 1 W.

Heteroepitaxial growth of orientation-patterned GaP on patterned GaAs template was developed by using hydride vapor phase epitaxy for quasi-phase-matching applications. We present the growth with well-defined periodic boundaries between (001) and (00 1) GaP domains. The GaP layer on planar GaAs was characterized by terahertz time-domain spectroscopy and the conductivity of GaP (0.16 S cm−1) was obtained in terahertz range.

This work investigates the impurity effects on the generalized stacking fault energy (GSFE) of InP via first-principles calculations. The impurity elements of group Ⅴ and VI, which substitute the P sublattice preferentially, are studied here. It is found that the GSFEs of InP will decrease considerably when these impurities are incorporated in the glide plane. The charge density maps indicate that the reduction of GSFEs is predominantly attributed to the electronic effects. These results could contribute to understanding the stacking fault characteristics of III-Ⅴ compounds incorporated by different impurities.

This work investigates the optical and interfacial properties of epitaxially fused direct GaInP/Si heterojunctions realized by the corrugated epitaxial lateral overgrowth (CELOG) approach. To provide a broad analysis of the above heterojunction, photoluminescence (PL), cathodoluminescence (CL), Raman, and high-resolution transmission electron microscopy (TEM) were employed in this study. The enhanced luminescence intensity was observed in the direct GaInP/Si heterojunction in the cross-sectional CL because of the reduced defect density in the CELOG GaInP. The spatial resolution dependent PL and CL spectra of GaInP on Si yielded the composition variation of GaInP arising from the anisotropic growth behavior of CELOG. The Ga composition, x, in GaxIn1−xP/Si at the interface deduced from the lattice constant measured by TEM has a good agreement with the results of PL and CL. Low thermal and lattice mismatch strain in CELOG GaInP on Si were revealed by the Raman spectra. TEM investigation further revealed the atomic structure of some planar defects in CELOG GaInP over Si. It is confirmed that although a thin atomic disorder was observed on the surface of Si substrate, an epitaxially fused GaInP/Si heterojunction with a reduced threading dislocation density of ∼6.4 × 107 cm−2 in comparison to ∼4.8 × 108 cm−2 in the InP seed on Si has been successfully fabricated by the CELOG technique despite about 4% lattice mismatch between GaInP and Si. The findings of this study demonstrate the great potential of the CELOG technique for promoting monolithic integration of III-V/Si-based optoelectronics.

Producción Científica, We fabricate and study direct InP/Si heterojunction by corrugated epitaxial lateral overgrowth (CELOG). The crystalline quality and depth-dependent charge carrier dynamics of InP/Si heterojunction are assessed by characterizing the cross-section of grown layer by low-temperature cathodoluminescence, time-resolved photoluminescence and transmission electron microscopy. Compared to the defective seed InP layer on Si, higher intensity band edge emission in cathodoluminescence spectra and enhanced carrier lifetime of InP are observed above the CELOG InP/Si interface despite large lattice mismatch, which are attributed to the reduced threading dislocation density realized by the CELOG method., Ministerio de Economía, Industria y Competitividad (Proyect ENE2014-56069-C4-4-R), Junta de Castilla y León (programa de apoyo a proyectos de investigación – Ref. Project VA081U16), Swedish Energy Agency and SOLAR-ERA.NET (program 40176-1), Swedish Research Council through Linné Excellence Center ADOPT

Three new sesquiterpenoids (sinuketal (1), sinulins A and B (2 and 3)) and two new cembranoids (sinulins C and D (4 and 5)), as well as eight known sesquiterpenoids (6–13) and eight known cembranoids (14–21), were isolated from the Xisha soft coral Sinularia sp. Their structures were elucidated by extensive spectroscopic analysis. Compound 1 possesses an unprecedented isopropyl-branched bicyclo [6.3.0] undecane carbon skeleton with unique endoperoxide moiety, and a plausible biosynthetic pathway of it was postulated. According to the reported biological properties of endoperoxide, the antimalarial, cytotoxic, antiviral, and target inhibitory activities of 1 were tested. Compound 1 showed mild in vitro antimalarial activity against Plasmodium falciparum 3D7, weak cytotoxic activities toward Jurkat, MDA-MB-231, and U2OS cell lines, inhibitory effects against influenza A viruses H1N1 and PR8, as well as mild target inhibitory activity against acetylcholinesterase. The other compounds were evaluated for cytotoxicities against HeLa, HCT-116, and A549 tumor cell lines and target inhibitory activities against protein tyrosine phosphatase 1B (PTP1B). Compound 20 exhibited cytotoxicities against HeLa and HCT-116, and compounds 5, 11, and 15 showed mild target inhibitory activities against PTP1B.

Carbon nanotubes (CNTs) were modified by alkali, and carbon nanotubes epoxy composites samples were prepared by the hot pressing method. Dynamic characteristics of the composites were studied by experiments. The results suggest that carbon nanotubes can hardly enhance the first natural frequency of epoxy composite, but the change of second and third order natural frequencies are obvious compared with the first one. Damping properties of the composites are improved, and with the mass ratio of CNTs increasing, the first three order damping properties of composites are all increased initially followed by the decrease. The results also indicate that flexural elastic modulus of the composites is enhanced, the first and the second order dynamic elastic modulus is greater than it but the third order is opposite. The first three order dynamic modulus of elasticity moments of CNTs composites whose mass fraction is two percent are all high.

Heteroepitaxial growth of orientation‐patterned (OP) GaP (OP‐GaP) on wafer‐bonded OP‐GaAs templates is investigated by low‐pressure hydride vapor phase epitaxy for exploiting the beneficial low two ...

Room temperature surface emission is realized on a large area (1.5 mm × 1.5 mm) photonic crystal quantum cascade laser (PhC-QCL) driven under pulsed mode, at the wavelength around 8.75 μm. By introducing in-plane asymmetry to the pillar shape and optimizing the current injection with a grid-like window contact, the maximum peak power of the PhC-QCL is up to 5 W. The surface emitting beam has a crossing shape with 10° divergence. ISSN:1094-4087

Nanosized octagonal pyramidal frusta of indium phosphide were selectively grown at circular hole openings on a silicon dioxide mask deposited on indium phosphide and indium phosphide pre-coated silicon substrates. The eight facets of the frusta were determined to be {111} and {110} truncated by a top (100) facet. The size of the top flat surface can be controlled by the diameter of the openings in the mask and the separation between them. The limited height of the frusta is attributed to kinetically controlled selective growth on the (100) top surface. Independent analyses with photoluminescence, cathodoluminescence and scanning spreading resistance measurements confirm certain doping enrichment in the frustum facets. This is understood to be due to crystallographic orientation dependent dopant incorporation. The blue shift from the respective spectra is the result of this enrichment exhibiting the Burstein–Moss effect. Very bright panchromatic cathodoluminescence images indicate that the top surfaces of the frusta are free from dislocations. The good optical and morphological quality of the nanopyramidal frusta indicates that the fabrication method is very attractive for the growth of site-, shape-, and number-controlled semiconductor quantum dot structures on silicon for nanophotonic applications.

We present and compare the existing methods of heteroepitaxy of III-Vs on silicon and their trends. We focus on the epitaxial lateral overgrowth (ELOG) method as a means of achieving good quality III-Vs on silicon. Initially conducted primarily by near-equilibrium epitaxial methods such as liquid phase epitaxy and hydride vapour phase epitaxy, nowadays ELOG is being carried out even by non-equilibrium methods such as metal organic vapour phase epitaxy. In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In a modified ELOG method called corrugated epitaxial lateral overgrowth (CELOG) method, it is possible to obtain direct interface between the III-V layer and silicon. In this presentation we exemplify some recent results obtained by these techniques. We assess the potentials of these methods along with the other existing methods for realizing truly monolithic photonic integration on silicon and III-V/Si heterojunction solar cells.

Epitaxial lateral overgrowth (ELOG) of GaInP on GaAs by hydride vapor phase epitaxy (HVPE) is carried out as a pre-study to obtain GaInP/Si heterointerface. We present first results on the growth of GaInP/Si by a modified ELOG technique, corrugated epitaxial lateral overgrowth (CELOG).

Defects in epitaxial laterally overgrown (ELO) InP layers are examined by high-resolution X-ray diffraction and synchrotron X-ray back-reflection and transmission topography. X-ray diffraction maps produce information about the overall crystal quality of the epitaxial layers in the InP ELO sample. The topographs show small angle boundaries, and the associated dislocations are located at the boundaries between the crystallites; allowing for their relative tilt, the maximum value for this is 0.06°. No defects inside the crystallites can be seen in the topographs, except for a small bending of 0.04° at most, of the ELO lattice planes. The section topographs show deformed X-ray interference fringes resulting from the large strain of the silicon lattice below the seeding areas.

Selective area growth (SAG) of GaInNAs/GaAs systems has been studied by metalorganic vapor-phase epitaxy (MOVPE) for the first time. This also includes a comparative study of SAG of the GaInAs/GaAs. The patterns consisted of various filling factors (F). The band gap changes and the growth morphology have been investigated. A red-shift observed for SAG GaInAs is similar to100 nm with respect to the planar GaInAs which can be attributed to both In enrichment and quantum well (QW) thickness enhancement. Selectively grown GaInNAs structures exhibit a maximum wavelength of 1.3 mum, corresponding to a red-shift of similar to80 nm with respect to the planar GaInNAs. Atomic force microscopy (AFM) scans reveal a three-dimensional growth behaviour for SAG GaInNAs unlike SAG GaInAs. This can be related to a certain amount of phase separation or strain that are often the signatures of N incorporation. The cathodoluminescence (CL) intensities (spectral line width) for SAG GaInNAs are larger (smaller) than those for SAG GaInAs at low F's but smaller (larger) at high F's. This indicates that at low F's, GaInAs has degraded due to very high strain but certain amount of strain compensation occurs in GaInNAs.

Temporally resolved epitaxial lateral overgrowth (ELO) of 12 alternating layers of unintentionally-doped and S-doped InP layers has been conducted in a low-pressure hydride vapour phase epitaxy reactor. The growth was conducted in the openings on a (0 0 1) n-InP substrate and oriented along 30° off the [1 1 0] direction. Based on the analysis of the cleaved cross-sections by scanning electron microscopy and scanning capacitance microscopy, an inhomogeneous dopant distribution has been observed within the same ELO layer. This is explained by invoking different bonding configurations exposed to the incorporating dopant atoms in the different emerging planes.

Two pairs of new non-brominated racematic pyrrole derivatives, (±)-nakamurine D (1) and (±)-nakamurine E (2), two new diterpene alkaloids, isoagelasine C (16) and isoagelasidine B (21), together with 13 known pyrrole derivatives ((±)-3 – 15), five known diterpene alkaloids (17 – 20, 22) were isolated from the South China Sea sponge Agelas nakamurai. The racemic mixtures, compounds 1 – 4, were resolved into four pairs of enantiomers, (+)-1 and (−)-1, (+)-2 and (−)-2, (+)-3 and (−)-3, and (+)-4 and (−)-4, by chiral HPLC. The structures and absolute configurations were elucidated on the basis of comprehensive spectroscopic analyses, quantum chemical calculations, quantitative measurements of molar rotations, application of van't Hoff's principle of optical superposition, and comparison with the literature data. The NMR and MS data of compound 3 are reported for the first time, as the structure was listed in SciFinder Scholar with no associated reference. These non-brominated pyrrole derivatives were found in this species for the first time. Compound 18 showed valuable cytotoxicities against HL-60, K562, and HCT-116 cell lines with IC50 values of 12.4, 16.0, and 19.8 μm, respectively. Compounds 16 – 19, 21, and 22 showed potent antifungal activities against Candida albicans with MIC values ranging from 0.59 to 4.69 μg/ml. Compounds 16 – 19 exhibited moderate antibacterial activities against Proteusbacillus vulgaris (MIC values ranging from 9.38 to 18.75 μg/ml).

Together with the optimal basic design, buried heterostructure quantum cascade laser (BH-QCL) with semi-insulating regrowth offers unique possibility to achieve an effective thermal dissipation and lateral single mode. We demonstrate here for the first time realization of BH-QCLs with a single step regrowth of highly resistive (>1x10(8) ohm.cm) semi-insulating InP:Fe in less than 45 minutes in a flexible hydride vapour phase epitaxy process for burying ridges etched down to 10-15 mu m deep both with and without mask overhang. The fabricated BH-QCLs emitting at similar to 4.7 mu m and similar to 5.5 mu m were characterized. 2 mm long 5.5 mu m lasers with ridge width 17-22 mu m, regrown with mask overhang, exhibited no leakage current. Large width and high doping in the structure did not permit high current density for CW operation. 5 mm long 4.7 mu m BH-QCLs of ridge widths varying from 6-14 mu m regrown without mask overhang, besides being spatially monomode, TM00, exhibited WPE of similar to 8-9% with an output power of 1.5 - 2.5 W at room temperature and under CW operation. Thus, we demonstrate a simple, flexible, quick, stable and single-step regrowth process with extremely good planarization for realizing buried QCLs leading to monomode, high power and high WPE.