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16 results on '"Yang, Bokuan"'

3. Temporal Analysis in Massive Open Online Courses – Towards Identifying at-Risk Students Through Analyzing Demographical Changes

Author

Shi, Lei, Yang, Bokuan, Toda, Armando, Spagnoletti, Paolo, Series Editor, De Marco, Marco, Series Editor, Pouloudi, Nancy, Series Editor, Te'eni, Dov, Series Editor, vom Brocke, Jan, Series Editor, Winter, Robert, Series Editor, Baskerville, Richard, Series Editor, Siarheyeva, Alena, editor, Barry, Chris, editor, Lang, Michael, editor, Linger, Henry, editor, and Schneider, Christoph, editor

Published
2020
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12. Demographical changes of student subgroups in MOOCs : towards predicting at-risk students

Author

Yang, Bokuan, Shi, Lei, Toda, Armando, Siarheyeva, A., Barry, C., Lang, M., Linger, H., and Schneider, C.

Subjects
ComputingMilieux_COMPUTERSANDEDUCATION
Abstract

Past studies have shown that student engagement in Massive Open Online Courses (MOOCs) could be used to identify at-risk students (students with drop-out tendency). Some studies have further considered student diversity by looking into subgroup behavior. Yet, most of them lack consideration of students’ behavioral changes along the course. Towards bridging the gap, this study clusters students based on both their interaction with the system and their characteristics and explores how their cluster membership changes along the course. The result shows that students’ cluster membership changes significantly in the first half of the course and stabilized in the second half of the course. Our findings provide insight into how students may be engaged in learning on MOOC platforms and suggest the improvement of identifying at-risk students based on their temporal data.

Published
2019

13. High sensitivity graphene-Al2O3 passivated InGaAs near-infrared photodetector.

Author

Yang, Bokuan, Zhao, Yangyang, and Chen, Jun

Subjects
*INDIUM gallium arsenide, *PHOTODETECTORS, *SCHOTTKY barrier, *THIN films, *MAGNITUDE (Mathematics)
Abstract

InGaAs/graphene Schottky photodiode has a low Schottky barrier height (SBH) which induces high dark current density. In this paper, an Al2O3 thin film is inserted between the layer of InGaAs and graphene to suppress the dark current density for nearly two orders of magnitude. As a result, it is a distinct enhancement on the performance that the graphene/Al2O3/InGaAs near-infrared photodetector (NIR PD) under −0.4 V has a better responsivity of 523.77 mA W−1 and a better detectivity of 4.42 × 1010 cm Hz1/2/W to 1064 nm incident light than the graphene/InGaAs NIR PD. Moreover, graphene/Al2O3/InGaAs NIR PD also has a great response to 1550 nm incident light and the degradation on the device was observed. With the calculation, an increase of 0.122 eV on the Schottky barrier height (SBH) of graphene/Al2O3/InGaAs was founded. The result is expected to promote the application of the graphene NIR PD to the novel sensors. [ABSTRACT FROM AUTHOR]

Published
2021
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16. High sensitivity graphene-Al 2 O 3 passivated InGaAs near-infrared photodetector.

Author

Yang B, Zhao Y, and Chen J

Abstract

InGaAs/graphene Schottky photodiode has a low Schottky barrier height (SBH) which induces high dark current density. In this paper, an Al 2 O 3 thin film is inserted between the layer of InGaAs and graphene to suppress the dark current density for nearly two orders of magnitude. As a result, it is a distinct enhancement on the performance that the graphene/Al 2 O 3 /InGaAs near-infrared photodetector (NIR PD) under -0.4 V has a better responsivity of 523.77 mA W -1 and a better detectivity of 4.42 × 10 10 cm Hz 1/2 /W to 1064 nm incident light than the graphene/InGaAs NIR PD. Moreover, graphene/Al 2 O 3 /InGaAs NIR PD also has a great response to 1550 nm incident light and the degradation on the device was observed. With the calculation, an increase of 0.122 eV on the Schottky barrier height (SBH) of graphene/Al 2 O 3 /InGaAs was founded. The result is expected to promote the application of the graphene NIR PD to the novel sensors., (© 2021 IOP Publishing Ltd.)

Published
2021
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