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A new $\alpha$-emitting isotope $^{214}$U, produced by fusion-evaporation reaction $^{182}$W($^{36}$Ar, 4n)$^{214}$U, was identified by employing the gas-filled recoil separator SHANS and recoil-$\alpha$ correlation technique. More precise $\alpha$-decay properties of even-even nuclei $^{216,218}$U were also measured in reactions of $^{40}$Ar, $^{40}$Ca with $^{180, 182, 184}$W targets. By combining the experimental data, improved $\alpha$-decay reduced widths $\delta^2$ for the even-even Po--Pu nuclei in the vicinity of magic neutron number $N=126$ were deduced. Their systematic trends are discussed in terms of $N_{p}N_{n}$ scheme in order to study the influence of proton-neutron interaction on $\alpha$ decay in this region of nuclei. It is strikingly found that the reduced widths of $^{214,216}$U are significantly enhanced by a factor of two as compared with the $N_{p}N_{n}$ systematics for the $84 \leq Z \leq 90$ and $N<126$ even-even nuclei. The abnormal enhancement is interpreted by the strong monopole interaction between the valence protons and neutrons occupying the $\pi 1f_{7/2}$ and $\nu 1f_{5/2}$ spin-orbit partner orbits, which is supported by a large-scale shell model calculation.

We have performed polarized Raman scattering measurements on WTe$_2$, for which an extremely large positive magnetoresistance has been reported recently. We observe 5 A$_1$ phonon modes and 2 A$_2$ phonon modes out of 33 Raman active modes, with frequencies in good accordance with first-principles calculations. The angular dependence of the intensity of the peaks observed is consistent with the Raman tensors of the $C_{2v}$ point group symmetry attributed to WTe$_2$. Although the phonon spectra suggest neither strong electron-phonon nor spin-phonon coupling, the intensity of the A$_1$ phonon mode at 160.6 cm$^{-1}$ shows an unconventional decrease with temperature decreasing, for which the origin remains unclear., Comment: 4 pages, 3 figures, 2 tables. Resistivity scale in Fig. 1 normalized

We report the crystal growth of a new compound, Yb3Os4Ge13, by using a Bi-flux method. X-ray diffraction measurement shows that it crystallizes in the quasi-skutterudite-type caged structure with a cubic space group of Pm-3n (No. 223). Magnetic measurements reveal almost fully localized Yb f-moments above 120 K. The resistivity exhibits a crossover from metallic to insulating behavior with a logarithmic increase below ~ 40 K. The specific heat coefficient shows a rapid upturn below ~5 K and exceeds 2 J mol-1 K-2 at 2 K. Our experimental analysis and electronic band structure calculations demonstrate that Yb3Os4Ge13 exhibits the Kondo effect due to strong hybridization of the localized Yb f-moments with the p-electrons of the surrounding Ge-cages., Comment: 18 pages, 5 figures, 2 tables

Shubnikov-de Haas (SdH) oscillations under a dc current bias are experimentally studied on a Hall bar sample of single layer graphene. In dc resistance, the bias current shows the common damping effect on the SdH oscillations and the effect can be well accounted for by an elevated electron temperature that is found to be linearly dependent on the current bias. In differential resistance, a novel phase inversion of the SdH oscillations has been observed with increasing dc bias, namely we observe the oscillation maxima develop into minima and vice versa. Moreover, it is found that the onset biasing current, at which a SdH extremum is about to invert, is linearly dependent on the magnetic field of the SdH extrema. These observations are quantitatively explained with the help of a general SdH formula., Comment: 5 pages, 4 figures, A few references added

We report that Bi$_2$Se$_3$ thin films can be epitaxially grown on SrTiO$_{3}$ substrates, which allow for very large tunablity in carrier density with a back-gate. The observed low field magnetoconductivity due to weak anti-localization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest much suppressed bulk conductivity at large negative gate-voltages and a possible role of surface states in the WAL phenomena. This work may pave a way for realizing three-dimensional topological insulators at ambient conditions., Comment: 5 pages, 4 figures.

We report observation of magneto-electric photocurrent generated via direct inter-band transitions in an InGaAs/InAlAs two-dimensional electron gas excited by a linearly polarized incident light.The electric current is proportional to the in-plane magnetic field which unbalances the velocities of the photoexcited carriers with opposite spins and consequently generates electric current from a spin photocurrent. The observed light polarization dependence of the electric current is explained microscopically by taking into account of the anisotropy of the photoexcited carrier density in wave vector space. The spin photocurrent can be extracted from the measured current and the conversion coefficient of spin photocurrent to electric current is estimated to be $10^{-3}$$\sim$$10^{-2}$ per Tesla.

The knowledge of electron g factor is essential for spin manipulation in the field of spintronics and quantum computing. While there exist technical difficulties in determining the sign of g factor in semiconductors by the established magneto-optical spectroscopic methods. We develop a time resolved Kerr rotation technique to precisely measure the sign and the amplitude of electron g factor in semiconductors.

A graphene nanoribbon (GNR) with orientation along its principle axis was obtained through a mechanical tearing process, and a quantum dot device was fabricated from the GNR. We have studied the transport property of the GNR quantum dot device down to dilution refrigerator temperatures. Two-fold charging periodicity was observed in the Coulomb-blockade measurement, signaling a shell-filling process with broken valley degeneracy. In one of the smaller Coulomb diamonds, Kondo-like resonance were observed, with two conductance peaks displaced symmetrically from the zero bias voltage. The splitting of Kondo resonance at zero magnetic field suggests spin-polarization of the quantum dot, possibly due to the edge states of a zigzag GNR., Comment: 5 pages, 4 figures

Using very-high mobility GaAs/AlGaAs 2D electron Hall bar samples, we have experimentally studied the photoresistance/photovoltaic oscillations induced by microwave irradiation in the regime where both 1/B and B-periodic oscillations can be observed. In the frequency range between 27 and 130 GHz we found that these two types of oscillations are decoupled from each other, consistent with the respective models that 1/B oscillations occur in bulk while the B-oscillations occur along the edges of the Hall bars. In contrast to the original report of this phenomenon (Ref. 1) the periodicity of the B-oscillations in our samples are found to be independent of L, the length of the Hall bar section between voltage measuring leads., Comment: 4 pages, 4 figures

The microwave (MW) photoresistance has been measured on a high-mobility two-dimensional electron gas patterned with a shallow triangular antidot lattice, where both the MW-induced resistance oscillations (MIRO) and magnetoplasmon (MP) resonance are observed superposing on sharp commensurate geometrical resonance (GR). Analysis shows that the MIRO, MP, and GR are decoupled from each other in these experiments., Comment: 5 pages, 4 figures, paper accepted by PRB

Converse effect of spin photocurrent and current induced spin polarization are experimentally demonstrated in the same two-dimensional electron gas system with Rashba spin splitting. Their consistency with the strength of the Rashba coupling as measured from beating of the Shubnikov-de Haas oscillations reveals a unified picture for the spin photocurrent, current-induced spin polarization and spin orbit coupling. In addition, the observed spectral inversion of the spin photocurrent indicates the system with dominating structure inversion asymmetry., Comment: 13 pages, 4 figures

We have studied experimentally the influence of a parallel magnetic field ($B_{//}$) on microwave-induced resistance oscillations (MIRO) and zero-resistance states (ZRS) previously discovered in a high-mobility 2D electron system. We have observed a strong suppression of MIRO/ZRS by a modest $B_{//}\sim 0.5$ T. In Hall bar samples, magnetoplasmon resonance (MPR) has also been observed concurrently with the MIRO/ZRS. In contrast to the suppression of MIRO/ZRS, the MPR peak is found to be enhanced by $B_{//}$. These findings have not been addressed by current models proposed to explain the microwave-induced effects., Comment: RevTex4, 4 pages, 3 figures

Giant-amplitude oscillations in dc magnetoresistance of a high-mobility two-dimensional electron system can be induced by millimeterwave irradiations, leading to zero-resistance states at the oscillation minima. Following a brief overview of the now well-known phenomenon, this paper reports on aspects of more recent experiments on the subject. These are: new zero-resistance states associated with multi-photon processes; suppression of Shubnikov-de Haas oscillations by high-frequency microwaves; and microwave photoconductivity of a high-mobility two-dimensional hole system., Comment: 10 pages and 7 figures, RevTex4;16th International Conference on High Magnetic Fields in Semiconductor Physics (SemiMag16), August 2-6, 2004, Tallahassee; To be published in International Journal of Modern Physics B; References added, typos corrected

An ultradense 2D electron system can be realized by adsorbing PH$_3$ precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling the PH$_3$ coverage the carrier density of such system can easily reach $\sim 10^{14}$ cm$^{-2}$, exceeding that typically found in GaAs/AlGaAs structures by more than two-three orders of magnitude. We report on a first systematic characterization of such novel system by means of standard magnetotransport. The main findings include logarithmic temperature dependence of zero-field conductivity and logarithmic negative magnetoresistance. We analyzed the results in terms of scaling theory of localization in two dimensions.

Using Corbino samples we have observed oscillatory conductance in a high-mobility two-dimensional electron system subjected to crossed microwave and magnetic fields. On the strongest of the oscillation minima the conductance is found to be vanishingly small, possibly indicating an insulating state associated with these minima., Comment: 4 pages, 3 figures, RevTex4

Magnetotransport in a laterally confined two-dimensional electron gas (2DEG) can exhibit modified scattering channels owing to a tilted Hall potential. Transitions of electrons between Landau levels with shifted guiding centers can be accomplished through a Zener tunneling mechanism, and make a significant contribution to the magnetoresistance. A remarkable oscillation effect in weak field magnetoresistance has been observed in high-mobility 2DEGs in GaAs-AlGa$_{0.3}$As$_{0.7}$ heterostructures, and can be well explained by the Zener mechanism., Comment: 5 pages, 4 figures. Text slightly shortened, figures resized