28 results on '"Yang, Guangan"'
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2. Comprehensive investigation on different ions of geostationary orbit induced single event burnout in GaN HEMT power devices
3. Exploring the influence of the contact resistance on perovskite phototransistors
4. Study of the single-event burnout triggering criteria and hardening of the 550 V SOI lateral-IGBT
5. Contactless edge for edge recombination optimization in solar cell.
6. High-voltage Indium-Tin-Oxide Thin-film Transistors Possessing Drift Region Capped with Indium-Tin-Oxide Layer
7. High-Voltage Amorphous InGaZnO Thin-Film Transistors With ITO-Modulated Offset Region
8. Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT
9. Contact engineering for organic CMOS circuits
10. A High Voltage Gain Inverter Integrated With Enhancement-and Depletion-Mode a-InGaZnO Thin-Film Transistors
11. A Monolithically Integrated Low-Dropout Regulator Based on a-InGaZnO TFTs with Ultralow Power Consumption
12. Quantitative Measurement of Interface State Density in Donor-Acceptor Polymer Transistors
13. A 1-V Supply a-InGaZnO-Based Voltage Reference With Enhancement- and Depletion-Mode Thin-Film Transistors
14. High-Voltage Amorphous IGZO TFTs with a Drift Region Implemented by an Ultrathin ITO Capping Layer
15. 200-V ITO Thin-Film Transistors with the Stair-ITO Drift Region
16. Bilateral 60-V Amorphous InGaZnO Thin-Film Transistors With Symmetric Stair Gate Dielectric
17. High-Voltage a-IGZO Thin Film Transistor with the Symmetrical Stair Gate-Dielectric Structure
18. 400-V Amorphous IGZO Thin-Film Transistors With Drift Region Doped by Hydrogen
19. Comprehensive Investigation on Electrical Properties of Split-Gate Trench Power MOSFETs Under Mechanical Strains
20. High-Voltage a-IGZO TFTs With the Stair Gate-Dielectric Structure
21. Comprehensive Investigation on Electrical Properties of 4H-SiC VDMOS Under Uniaxial and Biaxial Mechanical Strains
22. Investigation on the Single-event Burnout and Hardening of the 500V SOI Lateral-IGBT
23. Experimental Investigations on the Electrical Properties of 4H-SiC Power MOSFETs Under Biaxial and Uniaxial Mechanical Strains
24. Experimental Investigation on the Electrical Properties of SOI-LIGBT Under Total-Ionizing-Dose Radiation
25. Experimental Investigations on the Electrical Properties of 4H-SiC Power MOSFETs Under Biaxial and Uniaxial Mechanical Strains.
26. Experimental Investigation on the Electrical Properties of Lateral IGBT Under Mechanical Strain
27. Experimental Study on the Electrical Properties of Lateral IGBT Under the Mechanical Strain
28. Comprehensive Investigation on Electrical Properties of nLDMOS and pLDMOS Under Mechanical Strain
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