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6. Post-Etch Yield Killer Defects in 3D NAND High Aspect Ratio Etching Process

16. CMP Process Optimization Engineering by Machine Learning

25. A Discussion of Dielectric Film Deformation by E-Beam Energy

26. Asymmetric etching profile control during high aspect ratio Plasma etch

28. A 128Gb (MLC)/192Gb (TLC) single-gate vertical channel (SGVC) architecture 3D NAND using only 16 layers with robust read disturb, long-retention and excellent scaling capability

30. Reduction of wafer arcing during high aspect ratio etching

40. Trapping-free string select transistors and ground select transistors for Vg-type 3D NAND Flash memory

46. A highly scalable 8-layer Vertical Gate 3D NAND with split-page bit line layout and efficient binary-sum MiLC (Minimal Incremental Layer Cost) staircase contacts

49. The application of e beam inspection on 3D NAND flash

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