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208 results on '"Yang, Weihuang"'

5. Large and Controllable Spin-Valley Splitting in Two-Dimensional WS2/h-VN Heterostructure

Author

Ke, Congming, Wu, Yaping, Yang, Weihuang, Wu, Zhiming, Zhang, Chunmiao, Li, Xu, and Kang, Junyong

Subjects
Physics - Computational Physics, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Inspired by the profound physical connotations and potential application prospects of the valleytronics, we design a two-dimensional (2D) WS2/h-VN magnetic van der Waals (vdW) heterostructure and study the control of valley degree of freedom through the first-principles calculations. A considerable spin splitting of 627 meV is obtained at the K valley, accompanied with a strong suppression of that at the K' valley. An intrinsic large valley splitting of 376 meV is generated in the valence band, which corresponds to an effective Zeeman magnetic field of 2703 T. Besides of the valence band, the conduction band of WS2 possesses a remarkable spin splitting also, and valley labelled dark exciton states are present at the K' valley. The strengths of spin and valley splitting relied on the interfacial orbital hybridization are further tuned continually by the in-plane strain and interlayer spacing. Maximum spin and valley splitting of 654 and 412 meV are finally achieved, respectively, and the effective Zeeman magnetic field can be enhanced to 2989T with a -3 % strain. Time-reversal symmetry breaking and the sizable Berry curvature in the heterostructure lead to a prominent anomalous Hall conductivity at the K and K' valleys. Based on these finding, a prototype filter device for both the valley and spin is proposed.

Published
2019
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7. Innovative the Hybrid Teaching Model of Computer Courses Based on the Concept of Deep Learning Under the Background of Big Data

Author

Wang, Rongxia, Yang, Weihuang, Zhong, Yamei, Zhao, Linling, Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Li, Yong, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Oneto, Luca, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zamboni, Walter, Series Editor, Zhang, Junjie James, Series Editor, Pei, Yan, editor, Chang, Jia-Wei, editor, and Hung, Jason C., editor

Published
2022
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11. Mechanism of substrate-induced anisotropic growth of monolayer WS2 by kinetic Monte Carlo simulations

Author

Wu, Lixiang, Yang, Weihuang, and Wang, Gaofeng

Subjects
Condensed Matter - Materials Science
Abstract

Controlled anisotropic growth of two-dimensional materials provides an approach for the synthesis of large single crystals and nanoribbons, which are promising for applications as low-dimensional semiconductors and in next-generation optoelectronic devices. In particular, the anisotropic growth of transition metal dichalcogenides induced by the substrate is of great interest due to its operability. To date, however, their substrate-induced anisotropic growth is typically driven by the optimization of experimental parameters without uncovering the fundamental mechanism. Here, the anisotropic growth of monolayer tungsten disulfide on an ST-X quartz substrate is achieved by chemical vapor deposition, and the mechanism of substrate-induced anisotropic growth is examined by kinetic Monte Carlo simulations. These results show that, besides the variation of substrate adsorption, the chalcogen to metal (C/M) ratio is a major contributor to the large growth anisotropy and the polarization of undergrowth and overgrowth; either perfect isotropy or high anisotropy can be expected when the C/M ratio equals 2.0 by properly controlling the linear relationship between gas flux and temperature.

Published
2018
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15. Vehicle Collision Warning Method Based on Trajectory Prediction

Author

Wang, Rongxia, Yang, Weihuang, Kacprzyk, Janusz, Series Editor, Pal, Nikhil R., Advisory Editor, Bello Perez, Rafael, Advisory Editor, Corchado, Emilio S., Advisory Editor, Hagras, Hani, Advisory Editor, Kóczy, László T., Advisory Editor, Kreinovich, Vladik, Advisory Editor, Lin, Chin-Teng, Advisory Editor, Lu, Jie, Advisory Editor, Melin, Patricia, Advisory Editor, Nedjah, Nadia, Advisory Editor, Nguyen, Ngoc Thanh, Advisory Editor, Wang, Jun, Advisory Editor, Sugumaran, Vijayan, editor, Xu, Zheng, editor, and Zhou, Huiyu, editor

Published
2021
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27. A Micro-Airflow Sensor System Enabled by Triboelectric Nanogenerator for Lab Safety and Human–Computer Interaction

Author

Wang, Xucong, Li, Yingzhe, Liu, Chaoran, You, Weilong, Zou, Haiyang, Yue, Chenxi, Cheng, Jiagen, Yang, Weihuang, Li, Shaoxian, Lazarouk, Serguei, Labunov, Vladimir, Wang, Gaofeng, Lin, Hongjian, and Dong, Linxi

Abstract

The airflow sensor enabled by triboelectric nanogenerator (TENG) is significant for intelligent lab safety and human–computer interaction applications. However, the reported airflow/wind sensor focuses on enhancing the sensing materials and structures, lack of high resolution, and smart signal analysis. Herein, we present a self-powered micro-airflow sensor and its artificial intelligence (AI) system, applied for lab safety and human–computer interaction. The as-fabricated sensor has a high sensitivity of $0.6258~\mu \text{A}$ /(m/s) and a linearity of 0.9968. Attributing to the Venturi effect, the minimum detection velocity of the sensor is 0.13 m/s. Given the sensor performance, we develop a real-time pipeline gas leak location system with an AI user interface, which achieves a potential low detect error $\le 2.9$ cm. In addition, we successfully explore other applications, including human exit–entry counting, ventilation alarm, and breath-based smart aid communication. Above all, the airflow sensor exhibits tremendous potential in the AI and Internet of Things.

Published
2024
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30. CVD growth of large-area monolayer WS2 film on sapphire through tuning substrate environment and its application for high-sensitive strain sensor

Author

Yang, Weihuang, primary, Mu, Yuanbin, additional, Chen, Xiangshuo, additional, Jin, Ningjing, additional, Song, Jiahao, additional, Chen, Jiajun, additional, Dong, Linxi, additional, Liu, Chaoran, additional, Xuan, Weipeng, additional, Zhou, Changjie, additional, Cong, Chunxiao, additional, Shang, Jingzhi, additional, He, Silin, additional, Wang, Gaofeng, additional, and Li, Jing, additional

Published
2023
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32. Modulation of Valley Dynamics in Hybrid H/T Phase Monolayer WSe2

Author

Liu, Haiyang, primary, Zheng, Xuanli, additional, Liu, Gaohong, additional, Yin, Jun, additional, Ke, Congming, additional, Yang, Weihuang, additional, Wu, Yaping, additional, Wu, Zhiming, additional, Li, Xu, additional, Zhang, Chunmiao, additional, Xu, Feiya, additional, and Kang, Junyong, additional

Published
2022
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34. A Wearable and Flexible Photoplethysmogram Sensor Patch for Cuffless Blood Pressure Estimation With High Accuracy

Author

Liu, Wenjing, primary, Cheng, Jiagen, additional, Wu, Zutang, additional, Li, Jin, additional, Shi, Wei, additional, Yang, Weihuang, additional, Jin, Ningjing, additional, Mu, Yuanbin, additional, Weng, Binhui, additional, Wu, Jiashu, additional, Hao, Dandan, additional, Liu, Chaoran, additional, Wang, Zhipeng, additional, Li, Gang, additional, and Dong, Linxi, additional

Published
2022
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35. A Fully Integrated Flexible Electronic System With Highly Sensitive MWCNTs Piezoresistive Array Sensors for Pressure Monitoring

Author

Cheng, Jiagen, primary, Mu, Yuanbin, additional, Liu, Chaoran, additional, Yang, Weihuang, additional, Liu, Wenjing, additional, Wang, Huanze, additional, Wu, Jiashu, additional, Hou, Fujing, additional, Hao, Dandan, additional, Cheng, Lian, additional, Weng, Binhui, additional, Chen, Ying, additional, and Dong, Linxi, additional

Published
2022
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39. A Review of Transition Metal Dichalcogenides-Based Biosensors

Author

Sun, Hongyu, primary, Li, Dujuan, additional, Yue, Xiaojie, additional, Hong, Rui, additional, Yang, Weihuang, additional, Liu, Chaoran, additional, Xu, Hong, additional, Lu, Jun, additional, Dong, Linxi, additional, Wang, Gaofeng, additional, and Li, Dongyang, additional

Published
2022
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43. Protection and detection of physical hazards for the intelligent system under industrial Internet of Things by neural network.

Author

Wang, Rongxia, Liu, Zhifang, He, Fen, and Yang, Weihuang

Subjects
INDUSTRIALISM, INTERNET of things, BACK propagation, KALMAN filtering, SYSTEMS theory
Abstract

Aiming at detecting and avoiding many security risks brought by various intelligent equipment and sensors in industrial Internet of Things (IoT) intelligent system, the Kalman back propagation neural network (Kalman‐BPNN) algorithm is designed, based on the neural network and with the help of the unique advantages of Kalman filtering algorithm and back propagation neural network (BPNN) algorithm. Introductions are made on the architecture of IoT and the theory of system security, and descriptions are made on the principle and process of related algorithms in detail. The advantages of traditional algorithms are integrated to design a Kalman‐BPNN algorithm. The simulation experiment analysis is carried out, and the designed detection method is compared with the traditional detection method. The voltage test of the Kalman‐BPNN algorithm based on the neural network is no more than 4.1%, as the experiment shows. The true positive rate of Kalman‐BPNN algorithm is 91.121%, which is very close to the value of 1, indicating that the algorithm has a great probability to predict the normal voltage. The false positive rate is 9.341%, which is very close to 0, indicating that the algorithm has a small probability of false judgment. [ABSTRACT FROM AUTHOR]

Published
2023
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44. CVD growth of large-area monolayer WS2 film on sapphire through tuning substrate environment and its application for high-sensitive strain sensor.

Author

Yang, Weihuang, Mu, Yuanbin, Chen, Xiangshuo, Jin, Ningjing, Song, Jiahao, Chen, Jiajun, Dong, Linxi, Liu, Chaoran, Xuan, Weipeng, Zhou, Changjie, Cong, Chunxiao, Shang, Jingzhi, He, Silin, Wang, Gaofeng, and Li, Jing

Subjects
STRAIN sensors, STRAIN gages, SAPPHIRES, CHEMICAL vapor deposition, MONOMOLECULAR films, FIELD-effect transistors, ORGANIC field-effect transistors
Abstract

Large-area, continuous monolayer WS2 exhibits great potential for future micro-nanodevice applications due to its special electrical properties and mechanical flexibility. In this work, the front opening quartz boat is used to increase the amount of sulfur (S) vapor under the sapphire substrate, which is critical for achieving large-area films during the chemical vapor deposition processes. COMSOL simulations reveal that the front opening quartz boat will significantly introduce gas distribute under the sapphire substrate. Moreover, the gas velocity and height of substrate away from the tube bottom will also affect the substrate temperature. By carefully optimizing the gas velocity, temperature, and height of substrate away from the tube bottom, a large-scale continues monolayered WS2 film was achieved. Field-effect transistor based on the as-grown monolayer WS2 showed a mobility of 3.76 cm2V−1 s−1 and ON/OFF ratio of 106. In addition, a flexible WS2/PEN strain sensor with a gauge factor of 306 was fabricated, showing great potential for applications in wearable biosensors, health monitoring, and human–computer interaction. [ABSTRACT FROM AUTHOR]

Published
2023
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45. Modulation of Valley Dynamics in Hybrid H/T Phase Monolayer WSe2.

Author

Liu, Haiyang, Zheng, Xuanli, Liu, Gaohong, Yin, Jun, Ke, Congming, Yang, Weihuang, Wu, Yaping, Wu, Zhiming, Li, Xu, Zhang, Chunmiao, Xu, Feiya, and Kang, Junyong

Subjects
MONOMOLECULAR films, FINITE differences, CIRCULAR polarization, DEGREES of freedom, VALLEYS, ELECTROMAGNETIC fields, CHARGE transfer
Abstract

Two unequal K and K' valleys in transition metal dichalcogenides (TMDC) enable large and controllable polarization, which is the cornerstone of emerging valleytronic applications. Here, a phase engineering strategy aided by resonant plasmonic coupling is proposed to manipulate the valley degree of freedom. Compared with the pristine WSe2 monolayer, the hybrid H/T phase WSe2 exhibits an enhanced degrees of circular polarization (DCP) and valley polarization (DVP). As further aided by the designed Au plasmonic array, the T phase facilitates the excitons process and promotes the charge transfer in WSe2/Au interface under the plasmonic‐enhanced electromagnetic field. Consequently, both the DCP and DVP values are considerably enhanced to 38.5% (15.6%) and 15.1% (7.6%) at 13 K (room temperature), respectively. Through finite difference time domain simulations (FDTD), the near‐field excitation, exciton decay, and far‐field detection processes are systematically analyzed, and highly consistent polarizations are quantitatively achieved between the theoretical and the experimental results. Accordingly, the high polarizations are revealed to be contributed by the increased exciton generation and radiation efficiency, chiral electromagnetic field, and non‐equilibrium spin distribution in the hybrid phase. The research presented here illustrates a promising route to control the spin and valley degrees of freedom in TMDC materials. [ABSTRACT FROM AUTHOR]

Published
2023
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