1. Electrically tunable, rapid spin-orbit torque induced modulation of colossal magnetoresistance in Mn$_3$Si$_2$Te$_6$ nanoflakes
- Author
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Tan, Cheng, Deng, Mingxun, Yang, Yuanjun, An, Linlin, Ge, Weifeng, Albarakati, Sultan, Panahandeh-Fard, Majid, Partridge, James, Culcer, Dimitrie, Lei, Bin, Wu, Tao, Zhu, Xiangde, Tian, Mingliang, Chen, Xianhui, Wang, Rui-Qiang, and Wang, Lan
- Subjects
Condensed Matter - Mesoscale and Nanoscale Physics ,Condensed Matter - Materials Science ,Physics - Applied Physics - Abstract
As a quasi-layered ferrimagnetic material, Mn$_3$Si$_2$Te$_6$ nanoflakes exhibit magnetoresistance behaviour that is fundamentally different from their bulk crystal counterparts. They offer three key properties crucial for spintronics. Firstly, at least 10^6 times faster response comparing to that exhibited by bulk crystals has been observed in current-controlled resistance and magnetoresistance. Secondly, ultra-low current density is required for resistance modulation (~ 5 A/cm$^2$). Thirdly, electrically gate-tunable magnetoresistance has been realized. Theoretical calculations reveal that the unique magnetoresistance behaviour in the Mn$_3$Si$_2$Te$_6$ nanoflakes arises from a magnetic field induced band gap shift across the Fermi level. The rapid current induced resistance variation is attributed to spin-orbit torque, an intrinsically ultra-fast process (~nanoseconds). This study suggests promising avenues for spintronic applications. In addition, it highlights Mn$_3$Si$_2$Te$_6$ nanoflakes as a suitable platform for investigating the intriguing physics underlying chiral orbital moments, magnetic field induced band variation and spin torque., Comment: 22 pages,4 figures
- Published
- 2024