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1. New CVD precursors capable of depositing copper metal under mixed O2/Ar atmosphere

Author

Lay, Eddy, Yi-Hwa Song, Yuan-Chieh Chiu, Yang-Miin Lin, Yun Chi, Carty, Arthur J, Shie-Ming Peng, and Gene-Hsiang Lee

Subjects
Copper compounds -- Chemical properties, Chemical vapor deposition -- Methods, Fluorine compounds -- Chemical properties, Chemistry
Abstract

New series of Cu(super II) chemical vapor deposition (CVD) precursors are introduced, where the copper metal is chelated by two fluorinated imino alcoholate or amino alcoholate ligands. It can be noted that the low concentration of O2 promotes partial ligand oxidation, thus releasing the reduced copper on the substrate and affording the high-purity copper deposit.

Published
2005

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