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Silicon dioxide films; radio-frequency magnetron sputtering; annealing temperature Abstract. Silicon dioxide (SiO2) films are fabricated on single crystal silicon substrate by radio-frequency magnetron sputtering (RFMS) technique and annealed in electric furnaces at 800°C and 1180°C to form uniform, transparent and compact silica. The surface morphology and roughness of the films are characterized by an atomic force microscopy (AFM). X-ray diffraction (XRD) is employed to analyze the crystalline of the thin films. The chemical composition after annealing is analyzed using X-ray photoelectron spectroscopy (XPS).

The nucleation and crystallization of Li2O-Al2O3-SiO2(LAS) glass ceramic with one(P2O5, TiO2, ZnF2) and two nucleating agents(P2O5+TiO2, P2O5+ZnF2) are investigated by the differential thermal analysis(DTA)，X-ray diffraction(XRD) and the scanning electron microscopy(SEM). Research results show that the LAS glass ceramic with nucleating agent of P2O5can obtain ideal micro spherical crystal grains and the crystallization behavior can be better controlled.