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Thin films of HfO2 doped with 4% La were fabricated on LSMO/STO (100) substrates using pulsed laser deposition. The stability of the ferroelectric orthorhombic phase in the hafnia films was investigated with respect to varying oxygen pressure during deposition. X-ray diffraction and X-ray photoelectron spectroscopy measurements were carried out to analyze the structure and composition of the films and correlated with their ferroelectric properties. Surprisingly, the ferroelectricity of the hafnia films showed a dependence on oxygen pressure during deposition of LSMO bottom electrode as well. The reason for this dependence is discussed in terms of the active role of non-lattice oxygen in the ferroelectric switching of hafnia.

Multiferroic materials open up the possibility to design novel functionality in electronic devices, with low energy consumption. However, there are very few materials that show multiferroicity at room temperature, which is essential to be practically useful. AlxFe2-xO3 (x-AFO) thin films, belonging to the k-Al2O3 family are interesting because they show room temperature ferrimagnetism and have a polar crystal structure. However, it is difficult to realise its ferroelectric properties at room temperature, due to low resistivity of the films. In this work, we have deposited x-AFO (0.5 <= x <= 1) epitaxial thin films with low leakage, on SrTiO3<111> substrates by Pulsed Laser Deposition. Magnetic measurements confirmed room temperature ferrimagnetism of the films, however the Curie temperature was found to be influenced by deposition conditions. First principle calculations suggested that ferroelectric domain switching occurs through shearing of in-plane oxygen layers, and predicted a high polarization value of 24 uC/cm2. However, actual ferroelectric measurements showed the polarization to be two order less. Presence of multiple in-plane domains which oppose polarization switching of adjacent domains, was found to be the cause for the small observed polarization. Comparing dielectric relaxation studies and ferroelectric characterization showed that oxygen-vacancy defects assist domain wall motion, which in turn facilitates polarization switching., Comment: 15 pages, 11 figures

We elucidate the magnetic phases and superconducting transition temperatures (Tc) in Sr2VFeAsO3-delta (21113V), an iron-based superconductor with a thick-blocking layer fabricated from a perovskite-related transition metal oxide. At low temperatures (T < 37.1 K), 21113V exhibited a superconducting phase in the range 0.031 =< delta =< 0.145 and an antiferromagnetic (AFM) iron sublattice in the range 0.267 =< delta =< 0.664. Mixed-valent vanadium exhibited a dominant AFM phase in 0.031 =< delta =< 0.088, and a partial ferrimagnetic (Ferri.) phase in the range 0.124 =< delta =< 0.664. The Ferri. phase was the most dominant at a delta value of 0.267, showing an AFM phase of Fe at T < 20 K. Increasing the spontaneous magnetic moments reduced the magnetic shielding volume fraction due to the superconducting phase. This result was attributed to the magnetic phase of vanadium, which dominates the superconductivity of Fe in 21113V. The Tc-delta curve showed two maxima. The smaller and larger of Tc maxima occurred at delta = 0.073 and delta = 0.145, respectively; the latter resides on the phase boundary between AFM and the partial Ferri. phases of vanadium. 21113V is a useful platform for verifing new mechanisms of Tc enhancement in iron-based superconductors., Comment: 34 pages, 10 figures, 2 tables, supplement information with 11 pages, 8 figures, 3 tables. accepted for publication, J. Phys.: Condens. Matter, Updated manuscript contains More references and readability. See http://iopscience.iop.org/article/10.1088/1361-648X/aaf7e0

Bent band structures have been empirically described in ferroelectric materials to explain the functioning of recently developed ferroelectric tunneling junction and photovoltaic devices. This report presents experimental evidence for ferroelectric band bending, which was observed in the depth profiles of atomic orbitals of angle-resolved hard x-ray photoemission spectra of ferroelectric BaTiO3 thin films. The ferroelectric bent band structure is separated into three depth regions; the shallowest and deepest regions are slightly modulated by the screening effect at surface and interface, respectively, and the intermediate region exhibits the pure ferroelectric effect. In the pure ferroelectric bent band structure, we found that the binding energy of outer shell electrons shows a larger shift than that of inner shell electrons, and that the difference in energy shift is correlated with the atomic configuration of the soft phonon mode. These findings could lead to a simple understanding of the origin of electric polarization., Comment: 16 pages, 7 figures

Transition-metal oxides offer an opportunity to explore unconventional superconductors, where the superconductivity (SC) is often interrelated with novel phenomena such as spin/charge order, fluctuations, and Fermi surface instability (1-3). LiTi2O4 (LTO) is a unique compound in that it is the only known spinel oxide superconductor. In addition to electron-phonon coupling, electron-electron and spin fluctuation contributions have been suggested as playing important roles in the microscopic mechanism for its superconductivity (4-8). However, the lack of high quality single crystals has thus far prevented systematic investigation of their transport properties (9). Here, we report a careful study of transport and tunneling spectroscopy in epitaxial LTO thin films. In the superconducting state, the energy gap was found to decrease as a quadratic function of magnetic field. In the normal state, an unusual magnetoresistance (MR) was observed where it changes from anisotropic positive to isotropic negative as the temperature is increased. A constant charge carrier concentration without any abrupt change in lattice parameters as a function of temperature suggests that the isotropic MR stems from the suppression of spin scattering/fluctuations, while the anisotropic term originates from an orbital contribution. These observations point to an important role strong correlations play in this unique superconductor., Comment: 4 figures, SI not included

The structural and ferroelectric domain variants of highly-strained BiFeO3 films grown on vicinal LaSrAlO4 substrates were studied by piezoelectric force microscopy and high-resolution X-ray reciprocal space mapping. Through symmetry breaking of the substrate surface, ferroelastic domain variants in the highly-strained MC phase BiFeO3 can be greatly reduced. Single-domain film can be obtained on substrates with large miscut angle, which is accompanied by the reduction of structural variants in the mixed-phase nanodomains. These findings lead to better understanding of the phase evolution and polarization rotation process in the strain-driven morphotropic phase system., Comment: 15 pages, 4 figures