265 results on '"Yasutake K"'
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2. High-rate HMDSO-based coatings in open air using atmospheric-pressure plasma jet
3. Low refractive index silicon oxide coatings at room temperature using atmospheric-pressure very high-frequency plasma
4. High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD
5. Formation of silicon carbide at low temperatures by chemical transport of silicon induced by atmospheric pressure H 2/CH 4 plasma
6. Formation of silicon dioxide layers at low temperatures (150–400 °C) by atmospheric pressure plasma oxidation of silicon
7. Defect-free growth of epitaxial silicon at low temperatures (500–800 °C) by atmospheric pressure plasma chemical vapor deposition
8. Lifetime of metastable fluorine atoms
9. Effect of hydrogen on the structure of high-rate deposited SiC on Si by atmospheric pressure plasma chemical vapor deposition using high-power-density condition
10. Velocity spectrometer for a neutral atomic beam
11. Expression Profiles of Genes Associated With Viral Entry in HCV-Infected Human Liver
12. DETECTION OF INDOOR ATTACHED EQUIPMENT FROM TLS POINT CLOUDS USING PLANAR REGION BOUNDARY
13. Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition
14. Comparison of ordered structure in buried oxide layers in high-dose, low-dose, and internal-thermal-oxidation separation-by-implanted-oxygen wafers
15. Characterization of intrinsic amorphous silicon layers for solar cells prepared at extremely high rates by atmospheric pressure plasma chemical vapor deposition
16. Thermal and photo-induced surface damage in paratellurite
17. Deep-level characterization in semi-insulating GaAs by photo-induced current and Hall effect transient spectroscopy
18. Modeling and characterization of interface state parameters and surface recombination velocity at plasma enhanced chemical vapor deposited SiO2-Si interface
19. High-rate growth of epitaxial silicon at low temperatures (530–690 °C) by atmospheric pressure plasma chemical vapor deposition
20. Atmospheric-Pressure Plasma-Enhanced Chemical Vapor Deposition of Silicon and Silicon Oxide Layers for Low-Temperature Thin Film Transistors
21. Low Temperature Growth of Polycrystalline Silicon Films by Plasma Chemical Vapor Deposition under Higher Pressure than Atmospheric Pressure
22. Investigation of local charged defects within high-temperature annealed HfSiON/SiO2 gate stacks by scanning capacitance spectroscopy.
23. Investigation of local charged defects within high-temperature annealed HfSiON/Si[O.sub.2] gate stacks by scanning capacitance spectroscopy
24. Plasma-enhanced chemical-vapor-deposited oxide for low surface recombination velocity and high effective lifetime in silicon.
25. Crack healing and fracture strength of silicon crystals
26. General Lectures-(II)
27. Oxygen Precipitation and Microdefects in Czochralski-Grown Silicon Crystals
28. Compression Tests of Heat-Treated Czochralski-Grown Silicon Crystals
29. PP195-SUN: Modified MNA-SF – Change Cut-Off Points in CC and BMI – 2nd Report
30. Deposition of Functional Membranes by Through-Substrate Plane-Plate Dielectric-Barrier Discharge
31. Study on the Growth of Microcrystalline Silicon Films in Atmospheric-Pressure VHF Plasma Using Porous Carbon Electrode
32. An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma
33. Investigation of structural properties of high‐rate deposited SiNxfilms prepared at low temperatures (100–300 °C) by atmospheric‐pressure plasma CVD
34. Characterization of microcrystalline Si films deposited at low temperatures with high rates by atmospheric‐pressure plasma CVD
35. Therapeutic effect of bezafibrate against biliary damage: a study of phospholipid secretion via the PPARalpha-MDR3 pathway
36. Formation of silicon carbide at low temperatures by chemical transport of silicon induced by atmospheric pressure H2/CH4 plasma
37. In situ B-doped Si epitaxial growth at low temperatures by atmospheric-pressure plasma CVD
38. Formation of silicon dioxide layers at low temperatures (150—400°C) by atmospheric pressure plasma oxidation of silicon
39. Spatial Fluctuation of Electrical properties in Hf-Silicate Film Observed with Scanning Capacitance Microscopy
40. Characterization of SOI wafers by synchrotron X-ray topography
41. Characterization of hydrogenated amorphous Si1 xCxfilms prepared at extremely high rates using very high frequency plasma at atmospheric pressure
42. Studies on the stomach diseases by direct injection using gastrofiberscope
43. Atmospheric pressure plasma chemical vapor deposition system for high-rate deposition of functional materials
44. Microbial communities developing within bulk sediments under fish carcasses on a tidal flat.
45. Molecular beam epitaxial growth of AlN single crystalline films on Si (111) using radio-frequency plasma assisted nitrogen radical source
46. Effects of Changing the Type of H2-Blocker in the Treatment of H2-Blocker-Resistant Ulcers: Comparison of Roxatidine Acetate Hydrochloride and other H2-Blockers
47. Concentration and thermal release of hydrogen in amorphous silicon carbide films prepared by rf sputtering
48. Combination therapy with cisplatin, 5'-deoxy-5-fluorouridine (5'-DFUR) and mitomycin (MMC) in patients with inoperable, advanced gastric cancer
49. Record low SiO2/Si interface state density for low temperature oxides prepared by direct plasma‐enhanced chemical vapor deposition
50. Visual CASE: A software development system for home appliances.
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