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1,016 results on '"Ye, Jiandong"'

1. Tailoring light holes in $\beta$-$Ga_{2}O_{3}$ via Anion-Anion Antibonding Coupling

Author

Xu, Ke, Yang, Qiaolin, Liu, Wenhao, Zhang, Rong, Wang, Zhi, and Ye, Jiandong

Subjects
Condensed Matter - Materials Science, Physics - Computational Physics
Abstract

A significant limitation of wide-bandgap materials is their low hole mobility related to localized holes with heavy effective masses ($m_h^*$). We identify in low-symmetric wide-bandgap compounds an anion-anion antibonding coupling (AAAC) effect as the intrinsic factor behind hole localization, which explains the extremely heavy $m_h^*$ and self-trapped hole (STH) formation observed in gallium oxide ($\beta$-$Ga_{2}O_{3}$). We propose a design principle for achieving light holes by manipulating AAAC, demonstrating that specific strain conditions can reduce $m_h^*$ in $\beta$-$Ga_{2}O_{3}$ from 4.77 $m_0$ to 0.38 $m_0$, making it comparable to the electron mass (0.28 $m_0$), while also suppressing STH. The light holes show significant anisotropy, potentially enabling two-dimensional transport in bulk material. This study provides a fundamental understanding of hole mass enhancement and STH formation in novel wide-bandgap materials and suggest new pathways for engineering hole mobilities., Comment: 22 pages, 1 table, 5 figures

Published
2024

5. A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure

Author

Xu, Ru, Chen, Peng, Zhou, Jing, Li, Yimeng, Li, Yuyin, Zhu, Tinggang, Chen, Dunjun, Xie, Zili, Ye, Jiandong, Xiu, Xiangqian, Zhang, Rong, and Zheng, Youdou

Subjects
Condensed Matter - Materials Science, Physics - Applied Physics
Abstract

In this letter, we demonstrate a lateral AlGaN/GaN Schottky barrier diode (SBD) on sapphire substrate with low turn-on voltage (Von) and high breakdown voltage (VBK). By using a double barrier anode (DBA) structure formed by the mixture of Platinum (Pt) and Tantalum (Ta), the Von of the SBD can be as low as 0.36 V with a leakage current of 2.5E-6 A/mm. Supported by the high-quality carbon-doped GaN buffer on sapphire, the VBK can reach more than 10 kV with the anode-to-cathode spacing of 85 {\mu}m. Combining the VBK and the specific on-resistance (Ron,sp) of 25.1 m{\Omega}.cm^2, the power figure of merit of the SBD can reach 4.0 GW/cm^2, demonstrating a great potential for the application in ultra-high-voltage electronics., Comment: 4 pages, 4 figures and 1 table. This work has ever been successfully submitted to the IEEE Electron Device Letters for possible publication in Jan. 2022, and the manuscript ID is EDL-2022-01-0014. Finally, it is suggested to be submitted to another journal such as IEEE TED

Published
2022

16. High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-{\mu}m anode-to-cathode spacing

Author

Xu, Ru, Chen, Peng, Zhou, Jing, Li, Yimeng, Li, Yuyin, Zhu, Tinggang, Cheng, Kai, Chen, Dunjun, Xie, Zili, Ye, Jiandong, Liu, Bin, Xiu, Xiangqian, Han, Ping, Shi, Yi, Zhang, Rong, and Zheng, Youdou

Subjects
Condensed Matter - Materials Science, Physics - Applied Physics
Abstract

GaN-based lateral Schottky diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. However, the breakdown voltage (BV) of the SBDs are far from exploiting the material advantages of GaN at present, limiting the desire to use GaN for ultra-high voltage (UHV) applications. Then, a golden question is whether the excellent properties of GaN-based materials can be practically used in the UHV field? Here we demonstrate UHV AlGaN/GaN SBDs on sapphire with a BV of 10.6 kV, a specific on-resistance of 25.8 m{\Omega}.cm2, yielding a power figure of merit of more than 3.8 GW/cm2. These devices are designed with single channel and 85-{\mu}m anode-to-cathode spacing, without other additional electric field management, demonstrating its great potential for the UHV application in power electronics., Comment: 18 pages, 7 figures. This work has ever been successfully submitted to Nature Electronics for possible publication in July 2021, and the manuscript ID is NATELECTRON-21074250

Published
2021

20. All-Fibre Label-Free Nano-Sensor for Real-Time in situ Early Monitoring of Cellular Apoptosis

Author

Li, Danran, Wang, Nina, Zhang, Tianyang, Wu, Guangxing, Xiong, Yifeng, Du, Qianqian, Tian, Yunfei, Zhao, Wei-wei, Ye, Jiandong, Gu, Shulin, Lu, Yanqing, Jiang, Dechen, and Xu, Fei

Subjects
Physics - Optics, Quantitative Biology - Cell Behavior
Abstract

The achievement of all-fibre functional nano-modules for subcellular label-free measurement has long been pursued due to the limitations of manufacturing techniques. In this paper, a compact all-fibre label-free nano-sensor composed of a fibre taper and zinc oxide nano-gratings is designed and applied for the early monitoring of apoptosis in single living cells. Because of its nanoscale dimensions, mechanical flexibility and minimal cytotoxicity to cells, the sensing module can be loaded in cells for long-term in situ tracking with high sensitivity. A gradual increase in the nuclear refractive index during the apoptosis process is observed, revealing the increase in molecular density and the decrease in cell volume. The strategy used in this study not only contributes to the understanding of internal environmental variations during cellular apoptosis but also provides a new platform for non-fluorescent all-fibre devices to investigate cellular events and to promote new progress in fundamental cell biochemical engineering.

Published
2021

47. Assessing Flood Risks in Coastal Plain Cities of Zhejiang Province, Southeastern China.

Author

Huang, Saihua, Xuan, Weidong, Qiu, He, Ye, Jiandong, Chen, Xiaofei, Nie, Hui, and Chen, Hao

Subjects
FLOOD control, ANALYTIC hierarchy process, COASTAL plains, EMERGENCY management, CITIES & towns, FLOOD warning systems, FLOOD risk
Abstract

Constructing a precise and effective evaluation index system is crucial to flood disaster prevention and management in coastal areas. This study takes Lucheng District, Wenzhou City, Zhejiang Province, southeastern China, as a case study and constructs an evaluation index system comprising three criterion levels: disaster-causing factors, disaster-gestation environments, and disaster-bearing bodies. The weights of each evaluation index are determined by combining the Analytic Hierarchy Process (AHP) and the entropy method. The fuzzy matter-element model is utilized to assess the flood disaster risk in Lucheng District quantitatively. By calculating the correlation degree of each evaluation index, the comprehensive index of flood disaster risk for each street area is obtained, and the flood disaster risk of each street area is classified according to the risk level classification criteria. Furthermore, the distribution of flood disaster risks in Lucheng District under different daily precipitation conditions is analyzed. The results indicate that: (1) the study area falls into the medium-risk category, with relatively low flood risks; (2) varying precipitation conditions will affect the flood resilience of each street in Lucheng District, Wenzhou City. The flood disaster evaluation index system and calculation framework constructed in this study provide significant guidance for flood risk assessment in coastal plain cities. [ABSTRACT FROM AUTHOR]

Published
2024
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48. Orientation-dependent strain and dislocation in HVPE-grown α-Ga2O3 epilayers on sapphire substrates.

Author

Zhang, Yijun, Shen, Yang, Cui, Mei, Liu, Jing, Xie, Dabao, Ren, Fangfang, Gu, Shulin, Zheng, Youdou, Zhang, Rong, and Ye, Jiandong

Subjects
EDGE dislocations, EPITAXIAL layers, DISLOCATION density, GEOMETRIC quantum phases, STRAIN tensors
Abstract

Orientation-dependent substrates provide effective platforms for achieving α-Ga2O3 with low dislocation densities, whereas the associated strain and dislocation dynamics have not been fully explored. Herein, we investigated the evolution of growth mode, interfacial strain, and dislocation propagation in the α-Ga2O3 epitaxial layer with various orientations, grown by the halide vapor-phase epitaxy. Strain tensor theory and geometric phase analysis indicate that the m-plane α-Ga2O3 epitaxial layer exhibits the lowest misfit tensile strain, measured at εxx = 1.46% and εyy = 1.81%, resulting in the lowest edge dislocation density. The m-plane lattice exhibits an inclination of 33.60°, while the c-plane lattice is horizontally aligned and the a-plane lattice oriented perpendicularly. The orientation-dependent growth significantly influences stress relaxation through the generation of misfit dislocations, originating from either basal or prismatic slip. Edge dislocations, induced by misfit dislocations, favor the c-axis, remaining well confined within the in-plane interfacial layer of the m-plane α-Ga2O3, leading to reduced low edge dislocation density in the subsequent thick epitaxial layer. These findings shed light on the epitaxial dynamics of α-Ga2O3 heteroepitaxy, paving the way for the development of high-performance power devices. [ABSTRACT FROM AUTHOR]

Published
2024
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