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We have investigated arsenic precipitation in arsenide heterostructures grown at low temperature by molecular beam epitaxy. In these heterostructures, both doping and bond strength are found to affect arsenic precipitation during thermal annealing. For GaAs/A1[sub0.3]Ga[sub0.7]As multiple quantum wells, where GaAs is Be doped and A1[sub0.3]Ga[sub0.7]As is Si doped, arsenic precipitates preferentially appear in the GaAs region after annealing. For In[sub0.1]Ga[sub0.9]As/GaAs/In[sub0.1]A1[sub0.9]As heterostructures, whether they are doped or not, arsenic precipitates always tend to condense in the In[sub0.1]Ga[sub0.9]As region, indicating that the bond strength effect dominates the process of arsenic precipitation over the doping effect. [ABSTRACT FROM AUTHOR]

Investigates the role of excess arsenic in low-temperature grown Be-doped, undoped and Si-doped GaAs subjected to BCl[sub3]/Ar reactive ion etching using transmission electron microscopy and atomic force microscopy. Dependence of etching rate and extent of ion damage on doping type and thermal treatment.

We studied the photoluminescence spectra of rapid-thermal-annealed self-assembled InAs quantum dots at 10 K. For annealing temperatures ranging from 700 to 950 °C, we observed a blueshift in the interband transition energies, a decrease in the intersublevel spacing energies, and a narrowing of photoluminescence linewidths. In this letter, we demonstrate that the tuning of the InAs quantum dots interband transition and intersublevel spacing energies can be achieved by 30 s of rapid thermal annealing. The relation between interband transition energy changes and the intersublevel spacing energies is found to be linear, with a slope close to the ratio of the dots' height to their diameter. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]