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Summary: In this paper, a new floating memcapacitor emulator that consists of a single multiplier and only four transistors without using passive elements is proposed. While two of these transistors work as MOS capacitors, two of them are used to provide transconductance gain. Moreover, the proposed memcapacitor operates at high frequencies thanks to having simple structures. Furthermore, fix and variable parts of memcapacitance can be tuned electronically by changing DC bias voltages. In order to investigate the performance of the proposed memcapacitor, simulation results are given for different operating frequencies, radical temperature changes, memory effects, and Monte Carlo analysis. Moreover, to confirm the practical realization of the proposed memcapacitor, the proposed floating memcapacitor is implemented by using commercial devices as AD633, ALD1106, and ALD1107. Experimental results of the proposed circuit are given for different operating frequencies and DC supply voltages. Also, a memcapacitor‐based circuit that emulates the relationship between the amoeba's locomotive speed and temperature is given as an application of the proposed memcapacitor. The results for the proposed memcapacitor are in good agreement with theoretical data. [ABSTRACT FROM AUTHOR]

In this work, a grounded charge-controlled memcapacitor emulator circuit based on a Voltage Difference Current Conveyor (VDCC) is presented. The proposed circuit is constructed with only one VDCC element and four MOSFETs. It has a transistor-based structure without the use of any passive components. The absence of any passive components makes the circuit eliminating the need for complicated analog components. The suggested circuit does away with the necessity for a mutator, which eliminates the need for an additional separate memristor emulator. The analog multiplier circuit is also not used. Additionally, the designed memcapacitor circuit allows for independent electronic control of both the fixed and variable components, adding to its flexibility and adaptability. To demonstrate the accuracy of the suggested circuit, a SPICE simulation was run using a VDCC constructed with 0.18 μm TSMC CMOS transistors. [ABSTRACT FROM AUTHOR]

Implementing neuron circuit using memristor can be more effective thanks to some properties of memristor such as nonlinearity. For this reason, many memristor-based neuron circuits have been found in the literature. This study presents a memristor-based floating neuron circuit that exhibits different types of spikes. In the proposed circuit, two classical memristors and one special memristor are utilized. The special memristor is designed to exhibit various pinched hysteresis loops and plays an important role in producing different spike types. The proposed special memristor can also be controlled using only one voltage source. Using memristors, we implemented a neuron circuit which can produce regular spike, bursting spike and fast spike. Also, neuron circuit has a floating structure, and so there is no restriction on using it with other circuit elements. All simulations are implemented in the SPICE simulation program with TSMC 0.18- μ m CMOS process parameters. [ABSTRACT FROM AUTHOR]