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A novel ultralow turnoff loss dual-gate silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is proposed. The proposed SOI LIGBT features an extra trench gate inserted between the p-well and n-drift, and an n-type carrier stored (CS) layer beneath the p-well. In the on-state, the extra trench gate acts as a barrier, which increases the carrier density at the cathode side of n-drift region, resulting in a decrease of the on-state voltage drop (Von). In the off-state, due to the uniform carrier distribution and the assisted depletion effect induced by the extra trench gate, large number of carriers can be removed at the initial turnoff process, contributing to a low turnoff loss (Eoff). Moreover, owing to the dual-gate field plates and CS layer, the carrier density beneath the p-well can greatly increase, which further improves the tradeoff between Eoff and Von. Simulation results show that Eoff of the proposed SOI LIGBT can decrease by 77% compared with the conventional trench gate SOI LIGBT at the same Von of 1.1 V. [ABSTRACT FROM AUTHOR]

A lateral current regulator diode (CRD) with field plates is proposed and experimentally demonstrated. The proposed CRD is based on the junction field-effect transistor (JFET) structure. A cathode field plate is adopted to alleviate the channel-length modulation effect and to improve the saturated I—V characteristics. An anode field plate is induced to achieve a high breakdown voltage VB of the CRD. The influence of the key device parameters on the I—V characteristics of the lateral CRD are discussed. Experimental results show that the proposed CRD presents good I—V characteristics with a high VB about 180 V and a low knee voltage (Vk) below 3 V. Furthermore, the proposed CRD has a negative temperature coefficient. The well characteristic of the proposed CRD makes it a cost-effective solution for light-emitting-diode lighting. [ABSTRACT FROM AUTHOR]