18 results on '"Yin, Ruiyuan"'
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2. Incidence and influencing factors of post-intensive care cognitive impairment
3. Evaluation of the border traps in LPCVD Si3N4/GaN/AlGaN/GaN MIS structure with long time constant using quasi-static capacitance voltage method
4. Hydrogen-Modulated Step Graded Junction Termination Extension in GaN Vertical p-n Diodes
5. Evaluation of the border traps in LPCVD Si3N4/GaN/AlGaN/GaN MIS structure with long time constant using quasi-static capacitance voltage method.
6. A High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High-Energy Fluorine Ion Implanted Guard Rings
7. High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High Energy Fluorine Ion Implantation Based on Space Charge Induced Field Modulation (SCIFM) Effect
8. Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance
9. Planar Dual Gate GaN HEMT Cascode Amplifier as a Voltage Readout pH Sensor With High and Tunable Sensitivities
10. Investigation of the Trap States and $V_{\text{TH}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer
11. Toward Reliable Extraction of the Properties of Border Traps in Lateral GaN Power MOSFET with a Distributed Network Model
12. High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer
13. A Compact Model for Border Traps in Lateral MOS Devices with Large Channel Resistance
14. Correlation between border traps and exposed surface properties in gate recessed normally-off Al2O3/GaN MOSFET
15. Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage
16. Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4 as Passivation and Post Gate-Recess Channel Protection Layers
17. Correlation between border traps and exposed surface properties in gate recessed normally-off Al2O3/GaN MOSFET.
18. Physical mechanism of field modulation effects in ion implanted edge termination of vertical GaN Schottky barrier diodes.
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