1. Vertically aligned epitaxial graphene nanowalls with dominated nitrogen doping for superior supercapacitors
- Author
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Kuei-Hsien Chen, Ying-Ying Horng, Wei-Hsun Yang, Je-Ruei Wen, Hsiang-Feng Yen, Li-Chyong Chen, Yian Tai, Abhijit Ganguly, and Ming-Shien Hu
- Subjects
Supercapacitor ,Materials science ,Dopant ,business.industry ,Graphene ,Doping ,Nanotechnology ,General Chemistry ,Chemical vapor deposition ,Epitaxy ,Capacitance ,law.invention ,law ,Optoelectronics ,General Materials Science ,business ,Power density - Abstract
For graphene-based electrode materials, N doping is one of the leading approaches for enhancing the performance of supercapacitors. However, such an outstanding performance is suppressed by the agglomeration of graphene and unspecified N incorporation. Here, we demonstrate a direct growth of vertically epitaxial graphene nanowalls (GNWs) on flexible carbon cloths (CCs) via microwave plasma-enhanced chemical vapor deposition, whereby predominantly N doping was sequentially achieved by introducing in situ NH 3 plasma, to form N-doped GNWs (NGNWs). The vertically aligned three-dimensional (3D) architecture of epitaxial NGNWs and their unique selectivity to the specific N dopants make such electrodes an ideal platform, not only for enhancing the capacitive performance but also for studying the role of the C N bonding configuration in its performance. Remarkably, NGNW supercapacitors exhibit an excellent specific capacitance of 991.6 F/g (estimation based on the actively contributing component) and an apparent area-normalized capacitance of 1488.9 mF/cm 2 , at a specific current of 14.8 A/g. This approach allows us to achieve an energy density of 275.4 Wh/kg at a power density of 14.8 kW/kg (specific current of 14.8 A/g), and a power density of 74.1 kW/kg at an energy density of 232.6 Wh/kg (specific current of 74.1 A/g) in 1 M H 2 SO 4 .
- Published
- 2015
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