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Raman spectroscopy in transition metal dichalcogenides (TMDCs) helps determine their structural information and layer dependency. Because it is non‐destructive and fast, it is an archetypal spectroscopic technique to investigate the structure and defects in TMDCs. In our earlier study, we used a metal‐dielectric coating to enhance Raman signal of WS2 because the Raman Spectra measured from WS2 coated on the standard Si/SiO2 was significantly lower. This metal‐dielectric coating allowed access to the otherwise unavailable E12g and A1g modes of WS2. In this study, we compare the Raman spectra of WS2 on a Si/SiO2 to that of metal layers (Au [200 nm] and Al [200 nm]). A significant enhancement in the Raman signal of 2‐3L WS2 is observed for both the Au and Al coatings. Although 200 nm Au coating enhances the Raman Signal better than the 10 nm Au coating, it does not resolve the other signature vibrations other than E12g and A1g. Whereas, coating based on Al (200 nm) and Al (10 nm) both enhance the Raman signal of WS2. In the case of Al coating, we report well‐resolved vibrational modes such as the ones below <300 cm−1in a few layered WS2. This enhancement allows us to quantify the number of layers and also investigate the presence of defects. Photoluminescence measurements on 2–3L and 15L WS2 on Al (200 nm) confirm this. [ABSTRACT FROM AUTHOR]