114 results on '"Yoon, Kyung Jean"'
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2. All-printed triboelectric nanogenerator
3. In-Memory Hamming Error-Correcting Code in Memristor Crossbar
4. Review of Semiconductor Flash Memory Devices for Material and Process Issues
5. In-Memory Hamming Error-Correcting Code in Memristor Crossbar
6. In‐Memory Stateful Logic Computing Using Memristors: Gate, Calculation, and Application
7. Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases
8. Titanium dioxide thin films for next-generation memory devices
9. A Novel Stateful Logic Device and Circuit for In‐Memory Parity Programming in Crossbar Memory
10. Weight Update Generation Circuit Utilizing Phase Noise of Integrated Complementary Metal–Oxide–Semiconductor Ring Oscillator for Memristor Crossbar Array Neural Network‐Based Stochastic Learning
11. Comprehensive Read Margin and BER Analysis of One Selector-One Memristor Crossbar Array Considering Thermal Noise of Memristor With Noise-Aware Device Model
12. A Stateful Logic Family Based on a New Logic Primitive Circuit Composed of Two Antiparallel Bipolar Memristors
13. Physically Unclonable Function by an All-Printed Carbon Nanotube Network
14. What Will Come After V‐NAND—Vertical Resistive Switching Memory?
15. Fabrication of a Cu‐Cone‐Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability
16. Electrically-generated memristor based on inkjet printed silver nanoparticles
17. Fully Functional Logic-In-Memory Operations Based on a Reconfigurable Finite-State Machine Using a Single Memristor
18. Single-Cell Stateful Logic Using a Dual-Bit Memristor
19. A Variation-Tolerant, Sneak-Current-Compensated Readout Scheme for Cross-Point Memory Based on Two-Port Sensing Technique
20. Fully Functional Logic‐In‐Memory Operations Based on a Reconfigurable Finite‐State Machine Using a Single Memristor
21. Cu cone inserted CBRAM device fabrication and its improved switching reliability induced by field concentration effect
22. Nociceptive Memristor
23. Next-Generation Memory: Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109 (Adv. Electron. Mater. 7/2017)
24. Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109
25. Extension of Two-Port Sneak Current Cancellation Scheme to 3-D Vertical RRAM Crossbar Array
26. Stateful logic circuit and material using memristors
27. Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO2/Cu Electrochemical Metallization Device
28. The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system
29. A crossbar resistance switching memory readout scheme with sneak current cancellation based on a two-port current-mode sensing
30. Comprehensive Writing Margin Analysis and its Application to Stacked one Diode-One Memory Device for High-Density Crossbar Resistance Switching Random Access Memory
31. Double Layers-Stacked 3D 1D1R Crossbar Rram Integrating a Diode Selector with Rectification Ratio of ~109
32. Selector Requirements for 3D Resistive Switching Crossbar Array Based on Writing Margin Evaluation
33. Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2–x Structure with a Sub-μm2 Cell Area
34. A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory
35. Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
36. Electronic resistance switching in the Al/TiOx/Al structure for forming-free and area-scalable memory
37. The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system.
38. Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109.
39. Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO2/Cu Electrochemical Metallization Device.
40. A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View
41. Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
42. Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides
43. Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO2/Pt
44. Resistive Memory: 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory (Adv. Funct. Mater. 11/2013)
45. Highly Improved Uniformity in the Resistive Switching Parameters of TiO2Thin Films by Inserting Ru Nanodots
46. A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory.
47. Substrate Dependent Growth Behaviors of Plasma-Enhanced Atomic Layer Deposited Nickel Oxide Films for Resistive Switching Application
48. 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory
49. Optimization of Chemical Structure of Schottky-Type Selection Diode for Crossbar Resistive Memory
50. Titanium dioxide thin films for next-generation memory devices
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