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A study was conducted to analyze a novel quasi-two-dimensional gate-induced drain leakage framework and use it to determine the band-to-band tunneling current. Results indicated excellent agreement between the computed results using a quasi-two-dimensional model with measured values for a broad range of gate and drain biases. Findings also showed that the model can be utilized to stimulate hot-carrier band-to-band tunneling current for p-channel flash memory device.