139 results on '"You, Shuzhen"'
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2. Vertical GaN Devices: Process and Reliability
3. A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric.
4. Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure
5. Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate
6. Improving the Manufacturability of Low-Temperature GaN Ohmic Contact by Blocking the Fluorine Ion Injection
7. p-GaN Gate HEMTs on 6-inch Sapphire by CMOS-Compatible Process: A Promising Game Changer for Power Electronics
8. Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization
9. Transparent ITO gate p-GaN/AlGaN/GaN UV photodetector with high responsivity and high PDCR
10. Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization
11. Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate
12. 1700 V High-Performance GaN HEMTs on 6-inch Sapphire With 1.5 μm Thin Buffer
13. TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs
14. Report of GaN HEMTs on 8-in Sapphire
15. Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications
16. 1700 V High-performance GaN HEMTs on 6-inch Sapphire with 1.5 μm Thin Buffer
17. Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
18. Biogeochemistry of sedimentary phosphorus species in the world’s longest river on an Island, the Kapuas River (West Kalimantan, Indonesia)
19. Cloning, characterization and functional analysis of the role MhNCED3, a gene encoding 9-cis-epoxycarotenoid dioxygenase in Malus hupehensis Rehd., plays in plant tolerance to osmotic and Cd²⁺ stresses
20. Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition
21. Geochemical Behavior of Sedimentary Phosphorus Species in Northernmost Artificial Mangroves in China
22. Half-terahertz silicon/germanium heterojunction bipolar technologies: A TCAD based device architecture exploration
23. Recombination in the Ge-spiked monoemitter of the SiGe:C HBTs
24. Vertical GaN devices: Process and reliability
25. Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics
26. Characterization of a Novel Stress-Response Member of the MAPK Family in Malus hupehensis Rehd
27. Sodium nitroprusside promotes multiplication and regeneration of Malus hupehensis in vitro plantlets
28. Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
29. Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs
30. Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs
31. Integration of GaN analog building blocks on p-GaN wafers for GaN ICs
32. Reliability of p-GaN Gate HEMTs in Reverse Conduction
33. GaN power ICs design using the MIT virtual source GaNFET compact model with GateLeakage and V T instability effect
34. Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates
35. Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability
36. Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices
37. Surface-Potential-Based Compact Model for the Gate Current of p-GaN Gate HEMTs
38. Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors
39. Observation of Dynamic V TH of p-GaN Gate HEMTs by Fast Sweeping Characterization
40. Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
41. Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
42. Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates
43. Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI
44. GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and VT instability effect.
45. Observation of Dynamic VTH of p-GaN Gate HEMTs by Fast Sweeping Characterization.
46. Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration
47. Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates
48. Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures
49. Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs
50. Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination
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