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Si photonics has been receiving substantial attention as an integration platform in photonics and optoelectronic research, owing to the ability to manufacture low-cost, compact integrated circuits....

Separation of two-dimensional thin-film-materials into single layers had been considered very challenging both theoretically and experimentally until the mechanical exfoliation method was discovered. After the successful separation of single- and/or few-layer graphene, the possibility of wrinkle formation has been one of the main open topics because they were not readily observed in experiments. Here, we report experimental observations of different kinds of repetitive nanoscale deformations (ripples, wrinkles, and crumples) in folded single-layer graphene (SLG) on an SiO2 substrate. Using high-vacuum atomic force microscopy, we observed that SLG that was pre-transferred onto an SiO2 substrate was accidentally folded multiple times during the tip-scanning, resulting in the formation of bilayer and trilayer graphene (TLG). Through high-resolution tapping-mode scanning, we could observe the wrinkles, ripples, and crumples in TLG. Additionally, we observed a herringbone pattern that was attributed to an intermediate stage between the wrinkles and ripples; this intermediate state was labeled as wrinklon structure. In our analysis, to characterize the ripples, wrinkles, and crumples, we measured the spatial repetition and amplitude of each pattern using their average line profile and compared them.

On-demand NW light sources in a photonic integrated circuit (PIC) have faced several practical challenges. Here, we report on an all-graphene-contact, electrically pumped, on-demand transferrable NW source that is fabricated by implementing an all-graphene-contact approach in combination with a highly accurate microtransfer printing technique. A vertically p-i-n-doped top-down-fabricated semiconductor NW with optical gain structures is electrically pumped through the patterned multilayered graphene contacts. Electroluminescence (EL) spectroscopy results reveal that the electrically driven NW device exhibits strong EL emission between the contacts and displays waveguiding properties. Further, a single NW device is precisely integrated into an existing photonic waveguide to perform light coupling and waveguiding experiments. Three-dimensional numerical simulation results show a good agreement with experimental observations. We believe that our all-graphene-contact approach is readily applicable to various micro/nanostructures and devices, which facilitates stable electrical operation and thus extends their practical applicability in compact integrated circuits.

In this study, we report the experimental demonstration of electrically driven on-chip transferrable microdisk light-emitting diodes (LEDs). A vertical p– i– n doped AlGaInP microdisk, including multi-quantum-well structures, is top-down-fabricated, on-chip micro-transferred, and converted into single micro-LEDs. Optically transparent and mechanically flexible multilayered graphene sheets are judiciously designed and introduced to the top and bottom surfaces of a single microdisk, thereby forming the top and bottom contacts. Using electroluminescence measurements, the fabricated micro-LEDs are characterized; they exhibit diode-like transport behaviors, spectroscopic light-out vs current ( L– I) characteristics, and polarization-resolved emission properties. We believe that the proposed all-graphene-contact approach offers a direct and easy current injection scheme and further helps electrify various on-chip transferrable microarchitectures.

In this work, we investigate polarization-dependent excitation of the propagating surface plasmon polariton (SPP) modes in gold nanowires (Au NWs) combined with gold nanoparticles (Au NPs). The light coupling from focused light to SPPs on Au NWs is investigated for different structural combinations of Au NWs with Au NPs, using full-wave finite-element numerical simulations. The results show that the excitation of SPPs changes remarkably on varying the orientation of the NP on NW or the polarization angle of the incident light. Metallic NWs combined with NPs can be applied to the polarization-resolved SPP coupling in various optical and optoelectronic devices including photonic circuits and optical sensors.

We propose a vertical metal-insulator-metal (MIM) plasmonic cavity that comprises top Ag and bottom InGaAsP microring structures on an Ag substrate. A full vectorial numerical simulation was used to characterize the fundamental optical properties of the transverse-magnetic-like plasmonic whispering-gallery-modes (WGMs) excited in a variety of MIM plasmonic cavities. In addition, we exploit the controllability of far-field radiations using the single MIM microring cavity and successfully demonstrate strong directional and localized vertical radiations from the plasmonic WGMs by introducing a number of nanoscale disks along the circumference of the cavity. Our plasmonic cavity can be applied as a component of nanoscale photonic integrated circuits as well as spatially localized out-of-plane optical sensors.

Although counter-intuitive features have been observed in non-Hermitian optical systems based on micrometre-sized cavities, the achievement of a simplified but unambiguous approach to enable the efficient access of exceptional points (EPs) and the phase transition to desired lasing modes remains a challenge, particularly in wavelength-scale coupled cavities. Here, we demonstrate coupled photonic-crystal (PhC) nanolasers with asymmetric optical gains, and observe the phase transition of lasing modes at EPs through tuning of the area of graphene cover on one PhC cavity and systematic scanning photoluminescence measurements. As the gain contrast between the two identical PhC cavities exceeds the intercavity coupling, the phase transition occurs from the bonding/anti-bonding lasing modes to the single-amplifying lasing mode, which is confirmed by the experimental measurement of the mode images and the theoretical modelling of coupled cavities with asymmetric gains. In addition, we demonstrate active tuning of EPs by controlling the optical loss of graphene through electrical gating., Non-Hermitian optical systems have been shown to sustain lasing when they go from a PT-symmetric to a PT-symmetry-broken phase. Here, Kim et al. study this phase transition of lasing modes in partially graphene-covered coupled microcavities and show tuning of an exceptional point.

We fabricated a single U-shaped nanowire (NW) and tangent-coupled straight and U-shaped NWs using a novel technique of shape-controlled deterministic assembly of NWs with nanoscale controllability. To examine the optical properties of these structures, we calculated the transmitted and crossover optical powers of the fundamental guided mode in both the single and coupled CdS NWs by varying the key structural parameters such as the radius of curvature of the U-shaped head and the gap between the NWs. In addition, we experimentally studied active waveguiding in the assembled CdS NWs, which exhibited light coupling to the waveguide mode and direct transmission in the single U-shaped NW. Furthermore, the crossover coupling was measured for the tangent-coupled straight and U-shaped CdS NWs with a gap width of 70 nm. The shape-controlled deterministic assembly technique can open up a new opportunity to demonstrate subwavelength-scale photonic waveguides and couplers in compact nanophotonic integrated circuits.

Semiconductor nanowires and other one-dimensional materials are attractive for highly sensitive and spatially confined electrical and optical signal detection in biological and physical systems, although it has been difficult to localize active electronic or optoelectronic device function at one end of such one-dimensional structures. Here we report a new nanowire structure in which the material and dopant are modulated specifically at only one end of nanowires to encode an active two-terminal device element. We present a general bottom-up synthetic scheme for these tip-modulated nanowires and illustrate this with the synthesis of nanoscale p-n junctions. Electron microscopy imaging verifies the designed p-Si nanowire core with SiO2 insulating inner shell and n-Si outer shell with clean p-Si/n-Si tip junction. Electrical transport measurements with independent contacts to the p-Si core and n-Si shell exhibited a current rectification behavior through the tip and no detectable current through the SiO2 shell. Electrical measurements also exhibited an n-type response in conductance versus water-gate voltage with pulsed gate experiments yielding a temporal resolution of at least 0.1 ms and ∼90% device sensitivity localized to within 0.5 μm from the nanowire p-n tip. In addition, photocurrent experiments showed an open-circuit voltage of 0.75 V at illumination power of ∼28.1 μW, exhibited linear dependence of photocurrent with respect to incident illumination power with an estimated responsivity up to ∼0.22 A/W, and revealed localized photocurrent generation at the nanowire tip. The tip-modulated concept was further extended to a top-down/bottom-up hybrid approach that enabled large-scale production of vertical tip-modulated nanowires with a final synthetic yield of75% with4300 nanowires. Vertical tip-modulated nanowires were fabricated into50 individually addressable nanowire device arrays showing diode-like current-voltage characteristics. These tip-modulated nanowire devices provide substantial opportunity in areas ranging from biological and chemical sensing to optoelectronic signal and nanoscale photodetection.

We report a rationally designed coupled photonic crystal (PhC) cavity system that comprises two identical linear defect nanocavities, and we numerically investigate the controllable non-Hermitian optical properties of the eigenmodes of the nanocavities. Three different coupling schemes, namely, the tuning of the sizes of shared airholes, vertical shifting of one of the nanocavities, and lateral shifting of one of the nanocavities, are proposed. We examined the ability of these schemes to control the coupling strength between component cavities, which is a key factor that determines the non-Hermiticity of the system. Moreover, we introduce controlled levels of spatially asymmetric optical gain to the coupled PhC cavity by employing the vertical shifting scheme and independently tuning the gain and loss of individual nanocavities. Consequently, we successfully achieve the correspondingly tuned non-Hermitian behaviors of complex eigenfrequencies, such as the controlled emergence of phase transitions at exceptional points and the asymmetric development of amplified and decayed eigenmodes.

We present an integration of a single Ag nanowire (NW) with a graphene photodetector and demonstrate an efficient and compact detection of long-range surface plasmon polaritons (SPPs). Atomically thin graphene provides an ideal platform to detect the evanescent electric field of SPPs extremely bound at the interface of the Ag NW and glass substrate. Scanning photocurrent microscopy directly visualizes a polarization-dependent excitation and detects the SPPs. The SPP detection responsivity is readily controlled up to ∼17 mA/W by the drain-source voltage. We believe that the graphene SPP detector will be a promising building block for highly integrated photonic and optoelectronic circuits.

Integration of compound semiconductors with silicon (Si) has been a long-standing goal for the semiconductor industry, as direct band gap compound semiconductors offer, for example, attractive photonic properties not possible with Si devices. However, mismatches in lattice constant, thermal expansion coefficient, and polarity between Si and compound semiconductors render growth of epitaxial heterostructures challenging. Nanowires (NWs) are a promising platform for the integration of Si and compound semiconductors since their limited surface area can alleviate such material mismatch issues. Here, we demonstrate facet-selective growth of cadmium sulfide (CdS) on Si NWs. Aberration-corrected transmission electron microscopy analysis shows that crystalline CdS is grown epitaxially on the {111} and {110} surface facets of the Si NWs but that the Si{113} facets remain bare. Further analysis of CdS on Si NWs grown at higher deposition rates to yield a conformal shell reveals a thin oxide layer on the Si{113} facet. This observation and control experiments suggest that facet-selective growth is enabled by the formation of an oxide, which prevents subsequent shell growth on the Si{113} NW facets. Further studies of facet-selective epitaxial growth of CdS shells on micro-to-mesoscale wires, which allows tuning of the lateral width of the compound semiconductor layer without lithographic patterning, and InP shell growth on Si NWs demonstrate the generality of our growth technique. In addition, photoluminescence imaging and spectroscopy show that the epitaxial shells display strong and clean band edge emission, confirming their high photonic quality, and thus suggesting that facet-selective epitaxy on NW substrates represents a promising route to integration of compound semiconductors on Si.

Since the successful exfoliation of graphene, various methodologies have been developed to identify the number of layers of exfoliated graphene. The optical contrast, Raman G-peak intensity, and 2D-peak line-shape are currently widely used as the first level of inspection for graphene samples. Although the combination analysis of G- and 2D-peaks is powerful for exfoliated graphene samples, its use is limited in chemical vapor deposition (CVD)-grown graphene because CVD-grown graphene consists of various domains with randomly rotated crystallographic axes between layers, which makes the G- and 2D-peaks analysis difficult for use in number identification. We report herein that the Raman Si-peak intensity can be a universal measure for the number identification of multilayered graphene. We synthesized a few-layered graphene via the CVD method and performed Raman spectroscopy. Moreover, we measured the Si-peak intensities from various individual graphene domains and correlated them with the corresponding layer numbers. We then compared the normalized Si-peak intensity of the CVD-grown multilayer graphene with the exfoliated multilayer graphene as a reference and successfully identified the layer number of the CVD-grown graphene. We believe that this Si-peak analysis can be further applied to various 2-dimensional (2D) materials prepared by both exfoliation and chemical growth.

The Plateau-Rayleigh instability was first proposed in the mid-1800s to describe how a column of water breaks apart into droplets to lower its surface tension. This instability was later generalized to account for the constant volume rearrangement of various one-dimensional liquid and solid materials. Here, we report a growth phenomenon that is unique to one-dimensional materials and exploits the underlying physics of the Plateau-Rayleigh instability. We term the phenomenon Plateau-Rayleigh crystal growth and demonstrate that it can be used to grow periodic shells on one-dimensional substrates. Specifically, we show that for certain conditions, depositing Si onto uniform-diameter Si cores, Ge onto Ge cores and Ge onto Si cores can generate diameter-modulated core-shell nanowires. Rational control of deposition conditions enables tuning of distinct morphological features, including diameter-modulation periodicity and amplitude and cross-sectional anisotropy. Our results suggest that surface energy reductions drive the formation of periodic shells, and that variation in kinetic terms and crystal facet energetics provide the means for tunability.

We report the enhancement of light absorption in Si nanowire photovoltaic devices with one-dimensional dielectric or metallic gratings that are fabricated by a damage-free, precisely aligning, polymer-assisted transfer method. Incorporation of a Si3N4 grating with a Si nanowire effectively enhances the photocurrents for transverse-electric polarized light. The wavelength at which a maximum photocurrent is generated is readily tuned by adjusting the grating pitch. Moreover, the electrical properties of the nanowire devices are preserved before and after transferring the Si3N4 gratings onto Si nanowires, ensuring that the quality of pristine nanowires is not degraded during the transfer. Furthermore, we demonstrate Si nanowire photovoltaic devices with Ag gratings using the same transfer method. Measurements on the fabricated devices reveal approximately 27.1% enhancement in light absorption compared to that of the same devices without the Ag gratings without any degradation of electrical properties. We bel...

In this study, we proposed morphology-modulated Si nanowires (NWs) with a hexagonal cross-section and numerically investigated their resonant optical absorption and scattering properties. The calculated absorption and scattering efficiency spectra of the NWs exhibited optical resonances that could be controlled by tuning the aspect ratio (AR) of the NW cross-sectional shapes. The spectra also revealed interesting spectral behaviors including resonant peak shifts in the absorption spectrum and asymmetric line shapes in the scattering spectrum. To achieve spatially confined and wavelength-selective light absorption, we periodically modulated the geometry of the diameter in a single NW by combining two different ARs; we call these “diameter-modulated NWs.” We designed various diameter-modulated NWs with short and long pitch sizes, and we observed unique and interesting features in the optical resonance and corresponding light absorption spectra such as grating modes and three-dimensional cavity modes. The proposed diameter-modulated NWs can be promising building blocks for the nanoscale localized light absorption and detection in compact nanophotonic integrated circuits.

We report a theoretical investigation of light coupling between a semiconductor nanowire (NW) and a plasmonic waveguide. The light emitted from the NW is coupled to the waveguide and excites a symmetric plasmonic waveguide mode propagating along the top surface of the waveguide. Using numerical simulations, coupling efficiencies were calculated for various coupling structures consisting of tapered/non-tapered NWs and single-strip/double-strip gold waveguides. The highest coupling efficiency of >2.8% was obtained between a tapered NW and a double-strip plasmonic waveguide with a height of 200 nm. This study offers a new opportunity for the efficient integration of nanoscale light sources with plasmonic waveguides and enables further miniaturization of ultracompact photonic integrated circuits.

We demonstrate the efficient integration of an electrically driven nanowire (NW) light source with a double-strip plasmonic waveguide. A top-down-fabricated GaAs NW light-emitting diode (LED) is placed between two straight gold strip waveguides with the gap distance decreasing to 30 nm at the end of the waveguide and operated by current injection through the p-contact electrode acting as a plasmonic waveguide. Measurements of polarization-resolved images and spectra show that the light emission from the NW LED was coupled to a plasmonic waveguide mode, propagated through the waveguide, and was focused onto a subwavelength-sized spot of surface plasmon polaritons at the tapered end of the waveguide. Numerical simulation agreed well with these experimental results, confirming that a symmetric plasmonic waveguide mode was excited on the top surface of the waveguide. Our demonstration of a plasmonic waveguide coupled to an electrically driven NW LED represents important progress toward further miniaturization and practical implementation of ultracompact photonic integrated circuits.

We investigated surface-roughness-dependent optical loss in a plasmonic cavity consisting of a semiconductor nanodisk/silver nanopan structure. Numerical simulations show that the quality factors of plasmonic resonant modes significantly depend on the surface roughness of the dielectric-metal interface in the cavity structure. In the transverse-magnetic-like whispering-gallery plasmonic mode excited in a structure with disk diameter of 1000 nm, the total quality factor decreased from 260 to 130 with increasing root-mean-square (rms) surface roughness from 0 to 5 nm. This quantitative theoretical study shows that the smooth metal surface plays a critical role in high-performance plasmonic devices. Refereed/Peer-reviewed

Subwavelength-scale metal and dielectric nanostructures have served as important building blocks for electromagnetic metamaterials, providing unprecedented opportunities for manipulating the optical response of the matter. Recently, hyperbolic metamaterials have been drawing particular interest because of their unusual optical properties and functionalities, such as negative refraction and hyperlensing of light. Here, as a promising application of a hyperbolic metamaterial at visible frequency, we propose an invisible nanotube that consists of metal and dielectric alternating thin layers. The theoretical study of the light scattering of the layered nanotube reveals that almost-zero scattering can be achieved at a specific wavelength when the transverse-electric- or transverse-magnetic-polarized light is incident to the nanotube. In addition, the layered nanotube can be described as a radial-anisotropic hyperbolic metamaterial nanotube. The low scattering occurs when the effective permittivity of the hyperbolic nanotube in the angular direction is near zero and thus the invisibility of the layered nanotube can be efficiently obtained by analyzing the equivalent hyperbolic nanotube. Our new method to design and tune an invisible nanostructure represents a significant step toward the practical implementation of unique nanophotonic devices such as invisible photodetectors and low-scattering near-field optical microscopes.

We present a low-scattering radial anisotropic hyperbolic metamaterial nanotube of which angular permittivity is near zero. As a realization of the hyperbolic nanotube, we propose a metal/dielectric layered nanotube in the visible wavelength regime.

Wet-chemical synthesis is a promising alternative to the conventional vapour-phase method owing to its advantages in commercial-scale production at low cost. Studies on nanocrystallization in solution have suggested that growth rate is commonly affected by the size and density of surrounding crystals. However, systematic investigation on the mutual interaction among neighbouring crystals is still lacking. Here we report on strong interactive growth behaviours observed during anisotropic growth of zinc oxide hexagonal nanorods arrays. In particular, we found multiple growth regimes demonstrating that the diameter of the rod is dependent on its height. Local interactions among the growing rods result in cases where height is irrelevant to the diameter, increased with increasing diameter or inversely proportional to the diameter. These phenomena originate from material diffusion and the size-dependent Gibbs-Thomson effect that are universally applicable to a variety of material systems, thereby providing bottom-up strategies for diverse three-dimensional nanofabrication.

We report the experimental demonstration of an optically pumped rod-type photonic-crystal band-edge laser. Lasing operation was achieved with a low threshold of ~90 μW and a peak wavelength of 1451.5 nm at room temperature.

The realization of lasers as small as possible has been one of the long-standing goals of the laser physics and quantum optics communities. Among multitudes of recent small cavities, the one-dimensional nanobeam cavity has been actively investigated as one of the most attractive candidates for effective photon confinement thanks to its simple geometry. However, the current injection into the ultra-small nano-resonator without critically degrading the quality factor remains still unanswered. Here we report an electrically driven, one-dimensional, photonic-well, single-mode, room-temperature nanobeam laser whose footprint approaches the smallest possible value. The small physical volume of ~4.6 × 0.61 × 0.28 μm3 (~8.2(λ n−1)3) was realized through the introduction of a Gaussian-like photonic well made of only 11 air holes. In addition, a low threshold current of ~5 μA was observed from a three-cell nanobeam cavity at room temperature. The simple one-dimensional waveguide nature of the nanobeam enables straightforward integration with other photonic applications such as photonic integrated circuits and quantum information devices., Lasers for on-chip optical technologies should be as small as possible. Here, Jeong et al. achieve room-temperature lasing in an electrically driven nanobeam photonic structure using only 11 holes to confine the light.

In this review paper, we introduce the unique optical properties of high-quality, fully three-dimensional, subwavelength-scale plasmonic cavities. Surface-plasmon-polaritons excited at dielectric-metal interfaces are strongly confined in such cavities. The field profiles of plasmonic modes, their temperature-dependent quality factors, and subwavelength mode volumes are calculated and analyzed systematically using three-dimensional finite-difference time-domain simulations. Reasonable design of high-quality plasmonic cavities opens an opportunity to demonstrate novel plasmonic lasers enabling the further miniaturization of coherent light sources for use in ultra-compact photonic integrated circuits.

We report room-temperature lasing in a photonic crystal nanobeam cavity. The electrical current pulse is injected through a central post placed underneath the nanobeam. Lasing action is observed at a wavelength of ∼1470 nm with a threshold current of ∼ 9μA.

High-index semiconductor photonic crystal (PhC) cavities in a flexible substrate support strong and tunable optical resonances that can be used for highly sensitive and spatially localized detection of mechanical deformations in physical systems. Here, we report theoretical studies and fundamental understandings of resonant behavior of an optical mode excited in strain-sensitive rod- type PhC cavities consisting of high-index dielectric nanorods embedded in a low-index flexible polymer substrate. Using the three-dimensional finite-difference time-domain simulation method, we calculated two-dimensional transverse-electric-like photonic band diagrams and the three-dimensional dispersion surfaces near the first Gamma-point band edge of unidirectionally strained PhCs. A broken rotational symmetry in the PhCs modifies the photonic band structures and results in the asymmetric distributions and different levels of changes in normalized frequencies near the first Gamma-point band edge in the reciprocal space, which consequently reveals strain-dependent directional optical losses and selected emission patterns. The calculated electric fields, resonant wavelengths, and quality factors of the band-edge modes in the strained PhCs show an excellent agreement with the results of qualitative analysis of modified dispersion surfaces. Furthermore, polarization-resolved time-averaged Poynting vectors exhibit characteristic dipole-like emission patterns with preferentially selected linear polarizations, originating from the asymmetric band structures in the strained PhCs. (C) 2016 Optical Society of America

In this study, the modal characteristics of a single-GaN nanowire cavity with a triangular cross section surrounded by air or located on a silicon dioxide substrate have been analyzed. Two transverse resonant modes, transverse electric-like and transverse magnetic-like modes, are dominantly excited for nanowire cavities that have a small cross-sectional size of300 nm and length of 10 microm. Using the three-dimensional finite-difference time-domain simulation method, quality factors, confinement factors, single-mode conditions, and far-field emission patterns are investigated for a nanowire cavity as a function of one length of the triangular cross section. The results of these simulations provide information that will be vital for the design and development of efficient nanowire lasers and light sources in ultracompact nanophotonic integrated circuits.

We report the experimental demonstration of an optically pumped rod-type photonic-crystal band-edge laser. The structure consists of a 20 × 20 square lattice array of InGaAsP iron-nail-shaped rods. A single-mode lasing action is observed with a low threshold of ∼90 μW and a peak wavelength of 1451.5 nm at room temperature. Measurements of the polarization-resolved mode images and lasing wavelengths agree well with numerical simulations, which confirm that the observed lasing mode originates from the first Γ-point transverse-electric-like band-edge mode. We believe that this low-threshold band-edge laser will be useful for the practical implementation of nanolasers.

We propose an ultrasmall plasmonic cavity consisting of a high-index/low-index dielectric nanorod covered with silver. Full three-dimensional subwavelength confinement of the surface-plasmon polaritons was achieved at the high-index dielectric-silver interface without propagating to the low-index dielectric-silver interface. The numerical simulations showed that the plasmonic mode excited in this cavity has a deep subwavelength mode volume of 0.0038(λ/2n)(3) and a quality factor of 1500 at 40 K, and consequently a large Purcell factor of ∼2×10(5). Therefore, this plasmonic cavity is expected to be useful for the demonstration of high-efficiency single photon sources or low-threshold lasers in an ultracompact nanophotonic circuit.

We demonstrate new types of dielectric-band photonic crystal lasers in a two-dimensional modified single-cell cavity with enlarged air holes. Finite-difference time-domain simulations performed in real and Fourier spaces show that the dielectric-band cavity modes originating from the first band edge point in the dielectric band have mode patterns that are distinguishable from conventional air-band cavity modes. In our experiment, the observed multimode lasing peaks are identified as the hexapole and the monopole dielectric-band cavity modes through the spectral positions and mode images. The thresholds of these lasers are measured as approximately 340 microW and approximately 450 microW, respectively, at room temperature. In addition, using the simulation based on the actual fabricated structures, quality factors and mode volumes are computed as 4900 and 1.09 (lambda/n)3 for the hexapole mode, and 4300 and 2.27 (lambda/n)3 for the monopole mode, respectively.