191 results on '"Young, Chadwin D."'
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2. Reliability Assessment of Low-Temperature ZnO-Based Thin-Film Transistors
3. Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics
4. On the Dopant, Defect States, and Mobility in W Doped Amorphous In2O3 for BEOL Transistors
5. Impact of process anneals on high-k/β-Ga2O3 interfaces and capacitance
6. Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs
7. PBTI in High-k Oxides
8. Understanding the FinFET Mobility by Systematic Experiments
9. Ultrasensitive Perovskite Photodetector Achieved When Configured with a Si Metal Oxide Semiconductor Field‐Effect Transistor
10. TRANSIENT CHARGING EFFECTS AND ITS IMPLICATIONS TO THE RELIABILITY OF HIGH-K DIELECTRICS
11. Effect of fabrication processes before atomic layer deposition on β-Ga2O3/HfO2/Cr/Au metal–oxide–semiconductor capacitors
12. Energy storage performance in lead-free antiferroelectric 0.92(Bi0.54Na0.46)TiO3-0.08BaTiO3 ultrathin films by pulsed laser deposition
13. Impact of process anneals on high-k/β-Ga2O3 interfaces and capacitance.
14. Introduction of a Reset MOSFET to Mitigate the Influence of Ionic Movement in Perovskite MOSFET Photodetector Measurements
15. “Smart” TDDB algorithm for investigating degradation in high- κ gate dielectric stacks under constant voltage stress
16. Effect of fabrication processes before atomic layer deposition on β-Ga2O3/HfO2/Cr/Au metal–oxide–semiconductor capacitors.
17. Pulsed [I.sub.d]-[V.sub.g] methodology and its application to electron-trapping characterization and defect density profiling
18. Energy storage performance in lead-free antiferroelectric 0.92(Bi0.54Na0.46)TiO3-0.08BaTiO3 ultrathin films by pulsed laser deposition.
19. Spatial distributions of trapping centers in Hf[O.sub.2]/Si[O.sub.2] gate stack
20. PBTI in High-k Oxides
21. Graphene Mobility Dependence on the Resistivity of Si Wafer
22. Characterization and reliability measurement issues in devices with novel gate stack devices
23. A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films
24. Electrical Characterization Methodologies for the Assessment of High-k Gate Dielectric Stacks
25. TRANSIENT CHARGING EFFECTS AND ITS IMPLICATIONS TO THE RELIABILITY OF HIGH-K DIELECTRICS
26. Enhanced Surface Preparation Techniques for the Si/High-k Interface
27. Probing stress effects in HfO 2 gate stacks with time dependent measurements
28. Physical and electrical characterization of polysilicon vs. TiN gate electrodes for HfO 2 transistors
29. Investigation of negative bias temperature instability dependence on fin width of silicon-on-insulator-fin-based field effect transistors.
30. Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors
31. Engineering the interface chemistry for scandium electron contacts in WSe2 transistors and diodes
32. High-stability pH sensing with a few-layer MoS2 field-effect transistor
33. Understanding the Impact of Annealing on Interface and Border Traps in the Cr/HfO2/Al2O3/MoS2 System
34. Relatively Low-Temperature Processing and Its Impact on Device Performance and Reliability
35. Understanding the Effects of Low-Temperature Passivation and Annealing on ZnO TFTs Test Structures
36. Positive Bias Instability in ZnO TFTs with Al2O3 Gate Dielectric
37. Proposed one-dimensional passive array test circuit for parallel kelvin measurement with efficient area use
38. Stress-Induced Crystallization of Thin Hf1–XZrXO2 Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic Energy Storage Applications
39. Contact Engineering for Dual-Gate MoS2 Transistors Using O2 Plasma Exposure
40. A New Analytical Tool for the Study of Radiation Effects in 3-D Integrated Circuits: Near-Zero Field Magnetoresistance Spectroscopy
41. Engineering the Palladium–WSe2 Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts
42. Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors
43. Robust SiNx/GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD
44. Wafer Scale Graphene Field Effect Transistors on Thin Thermal Oxide
45. Hot Carrier Stress Investigation of Zinc Oxide Thin Film Transistors with an Al2O3 Gate Dielectric
46. Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics
47. Electrical characterization of process induced effects on non-silicon devices
48. Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors with Low-Voltage Operation and High Reliability for Next-Generation FRAM Applications
49. Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films
50. Evaluation of border traps and interface traps in HfO 2 /MoS 2 gate stacks by capacitance–voltage analysis
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