298 results on '"Yu, Hyun-Yong"'
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2. Charge transfer mechanism for realization of double negative differential transconductance
3. Effective threshold voltage modulation technique for steep-slope 2D atomic threshold switching field-effect transistor
4. Effective Schottky barrier height and interface trap density reduction engineering using 2-dimensional reduced graphene oxide interlayer for metal-interlayer-semiconductor contact structure
5. Active layer nitrogen doping technique with excellent thermal stability for resistive switching memristor
6. First Demonstration of Yttria‐Stabilized Hafnia‐Based Long‐Retention Solid‐State Electrolyte‐Gated Transistor for Human‐Like Neuromorphic Computing.
7. Bimodal neural probe for highly co-localized chemical and electrical monitoring of neural activities in vivo
8. Dielectric Interface Engineering Using Aminosilane Coupling Agent for Enhancement of Negative Differential Resistance Phenomenon
9. CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor
10. Charge Transfer Mechanism for Realization of Double Negative Differential Transconductance
11. Effective Schottky barrier height lowering technique for InGaAs contact scheme: DMIGS and Dit reduction and interfacial dipole formation
12. A neural probe for concurrent real-time measurement of multiple neurochemicals with electrophysiology in multiple brain regions in vivo
13. Fabrication of Multi-layered Macroscopic Hydrogel Scaffold Composed of Multiple Components by Precise Control of UV Energy
14. Nondegenerate n-type doping phenomenon on molybdenum disulfide (MoS2) by zinc oxide (ZnO)
15. Highly Reliable Electrochemical Metallization Threshold Switch Through Conductive Filament Engineering Using Two‐Dimensional PtSe 2 Insertion Layer
16. Excellent Improvement of Contact Resistivity and Thermal Stability for High Temperature Process after Silicidation of TiSi2 through Ta Interlayer for diffusion barrier
17. Threshold voltage variation-immune FinFET design with metal-interlayer-semiconductor source/drain structure
18. Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
19. Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide.
20. Highly Reliable Electrochemical Metallization Threshold Switch Through Conductive Filament Engineering Using Two‐Dimensional PtSe2 Insertion Layer.
21. Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers
22. Analytical Model of Contact Resistance in Vertically Stacked Nanosheet FETs for Sub-3-nm Technology Node
23. Dopant-dependence of one-step metal-induced dopant activation process in silicon
24. Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS With Nanosheet FET
25. Effective Schottky Barrier Height and Interface Trap Density Reduction Engineering Using 2-Dimensional Reduced Graphene Oxide Interlayer for Metal-Interlayer-Semiconductor Contact Structure
26. Device Design Guidelines of 3-nm Node Complementary FET (CFET) in Perspective of Electrothermal Characteristics
27. Analysis of the Thermal Degradation Effect on a HfO2-Based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System
28. Dopant profile model in a shallow germanium n+/p junction
29. Enhancement of Synaptic Characteristics Achieved by the Optimization of Proton–Electron Coupling Effect in a Solid‐State Electrolyte‐Gated Transistor
30. Steep‐Slope Gate‐Connected Atomic Threshold Switching Field‐Effect Transistor with MoS2 Channel and Its Application to Infrared Detectable Phototransistors
31. Enhancement of DRAM Performance by Adopting Metal–Interlayer–Semiconductor Source/Drain Contact Structure on DRAM Cell
32. Excellent Improvement of Contact Resistivity and Thermal Stability for High Temperature Process After Silicidation of TiSi2 Through Ta Interlayer for Diffusion Barrier
33. LER-Induced Random Variation–Immune Effect of Metal-Interlayer–Semiconductor Source/Drain Structure on N-Type Ge Junctionless FinFETs
34. A minimally invasive flexible electrode array for simultaneous recording of ECoG signals from multiple brain regions
35. Electrothermal Characterization and Optimization of Monolithic 3D Complementary FET (CFET)
36. An Artificial Neuron Using a Bipolar Electrochemical Metallization Switch and Its Enhanced Spiking Properties through Filament Confinement
37. Hysteresis Modulation on Van der Waals‐Based Ferroelectric Field‐Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks
38. Schottky barrier engineering with a metal nitride–double interlayer–semiconductor contact structure to achieve high thermal stability and ultralow contact resistivity
39. A Hybrid RF MEMS Switch Actuated by the Combination of Bidirectional Thermal Actuations and Electrostatic Holding
40. A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films
41. Analysis of Drain Linear Current Turn-Around Effect in Off-State Stress Mode in pMOSFET
42. A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory
43. Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering
44. (Invited) Characterizations of Direct Band Gap Photoluminescence and Electroluminescence from epi-Ge on Si
45. Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse
46. Rhenium Diselenide (ReSe 2 ) Near‐Infrared Photodetector: Performance Enhancement by Selective p‐Doping Technique
47. Ultralow Schottky Barrier Height Achieved by Using Molybdenum Disulfide/Dielectric Stack for Source/Drain Contact
48. Nitrogen-Induced Enhancement of Synaptic Weight Reliability in Titanium Oxide-Based Resistive Artificial Synapse and Demonstration of the Reliability Effect on the Neuromorphic System
49. Steep‐Slope Gate‐Connected Atomic Threshold Switching Field‐Effect Transistor with MoS2 Channel and Its Application to Infrared Detectable Phototransistors.
50. Reduction of Threshold Voltage Hysteresis of MoS2 Transistors with 3-Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior
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