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In this work, the mechanism of reliability of high resistance state (HRS) in AlOxNy-based resistive random access memory (RRAM) has been studied. The Ta/AlOxNy/Pt devices with high quality of the Schottky contact in the Ta/AlOxNy interface show excellent HRS reliability and low power consumption characteristics. We propose that the resistive switching (RS) process is caused by the migration of oxygen ions in the AlOxNy-based RRAM device, and the quality of the metal–semiconductor Schottky contact directly determines HRS reliability in AlOxNy-based RRAM. [ABSTRACT FROM AUTHOR]

The ethanol extract from Akebia quinata was seperated by dichloromethane, n-butanol in sequence. Six compounds were isolated and identified as beta-sitosterol (I), delta(5,22) stigmasterol (II), oleanolic acid (III), hederagenin (IV), daucosterol (V), delta(5,22) stigmasterol-3-O-beta-D-glycopyranoside (VI). Compound VI was isolated from Akebia plants for the first time.

Objective: To study the genuine of 32 samples of Niuxi from 14 provinces, and compare some samples stored for different time to check the change in the coures of store., Method: IR spectroscopy and Analyze Technology Auxiliary softeare., Result: The coefficient correlations had certain difference among these Niuxi from different places. They were divided into two parts if r = 0.9840 the standerd: trueborn crude drugs (r > 0.9840) and non-trueborn (r < 0.9840). And we can know the change in medicinal materials according r., Conclusion: The method is operated simple and determined fast; the result is reliable; repetitiveness is good.