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3. Anomalous spatial shifts in interface electronic reflection beyond linear approximation

Author

Li, Runze, Cui, Chaoxi, Zhou, Xinxing, and Yu, Zhiming

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science, Physics - Optics
Abstract

Recently, the electronic analogy of the anomalous spatial shift, including Goos-H\"{a}nchen and Imbert-Fedorov effects, has been attracting widespread interest. The current research on the anomalous spatial shift in interface electronic reflection is based on the paradigm of linear approximation, under which the center position of the incident and reflected beams are obtained by expanding the phases of relevant basis states and scattering amplitudes to the first order of incident momentum. However, in a class of normal cases, the linear approximation can lead to a divergent spatial shift in reflection for certain incident angles even though the corresponding reflection possibility is finite. In this work, we show that such non-physical results are caused by an abrupt change in the number of the propagating states at critical parameters, and can be resolved by calculating the center positions of the scattering beams beyond the linear approximation. Moreover, we find that the beam width has an important influence on the spatial shift near the critical angles. We demonstrate our idea via concrete calculations of Goos-H\"{a}nchen and Imbert-Fedorov shift on two representative models. These results are beneficial for clarifying the scope of application of the linear approximation in the study of anomalous spatial shifts.

Published
2022

18. Ultra‐Steep‐Slope High‐Gain MoS2 Transistors with Atomic Threshold‐Switching Gate

Author

Lin, Jun, Chen, Xiaozhang, Duan, Xinpei, Yu, Zhiming, Niu, Wencheng, Zhang, Mingliang, Liu, Chang, Li, Guoli, Liu, Yuan, Liu, Xingqiang, Zhou, Peng, and Liao, Lei

Subjects
Physical Sciences, Engineering, Nanotechnology, high gain, inverter, resistive gate, steep slope, threshold swing
Abstract

The fundamental Boltzmann limitation dictates the ultimate limit of subthreshold swing (SS) to be 60 mV dec-1 , which prevents the continued scaling of supply voltage. With atomically thin body, 2D semiconductors provide new possibilities for advanced low-power electronics. Herein, ultra-steep-slope MoS2 resistive-gate field-effect transistors (RG-FETs) by integrating atomic-scale-resistive filamentary with conventional MoS2 transistors, demonstrating an ultra-low SS below 1 mV dec-1 at room temperature are reported. The abrupt resistance transition of the nanoscale-resistive filamentary ensures dramatic change in gate potential, and switches the device on and off, leading to ultra-steep SS. Simultaneously, RG-FETs demonstrate a high on/off ratio of 2.76 × 107 with superior reproducibility and reliability. With the ultra-steep SS, the RG-FETs can be readily employed to construct logic inverter with an ultra-high gain ≈2000, indicating exciting potential for future low-power electronics and monolithic integration.

Published
2022

22. Ultralong carrier lifetime of topological edge states in a-Bi4Br4

Author

Mao, Pengcheng, Han, Junfeng, Zheng, Jingchuan, Zhou, Jinjian, Yu, Zhiming, Xiao, Wende, Chen, Dongyun, Wang, Gang, Ma, Jie, Liu, Cheng-cheng, Li, Xiang, Wang, Qinsheng, Duan, Junxi, Chen, Hailong, Weng, Yuxiang, and Yao, Yugui

Subjects
Condensed Matter - Materials Science
Abstract

The rising of quantum spin Hall insulators (QSHI) in two-dimensional (2D) systems has been attracting significant interest in current research, for which the 1D helical edge states, a hallmark of QSHI, are widely expected to be a promising platform for next-generation optoelectronics. However, the dynamics of the 1D edge states has not yet been experimentally addressed. Here, we report the observation of optical response of the topological helical edge states in a-Bi4Br4, using the infrared-pump infrared-probe microscopic spectroscopy. Remarkably, we observe that the carrier lifetime of the helical edge states reaches nanosecond-scale at room temperature, which is about 2 - 3 orders longer than that of most 2D topological surface states and is even comparable with that of the well developed optoelectronics semiconductors used in modern industry. The ultralong carrier lifetime of the topological edge states may be attributed to their helical and 1D nature. Our findings not only provide an ideal material for further investigations of the carrier dynamics of 1D helical edge states but also pave the way for its application in optoelectronics., Comment: 18 pages, 4 figures, 57 references

Published
2020

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