Search

MoO2 nanowires (NWs), MoO2/MoS2 core-shell NWs, and MoS2 nanotubes (NTs) were synthesized by the turbulent flow chemical vapor deposition of MoO2 using MoO3, followed by sulfurization in the sulfur gas flow. The involvement of MoOx suboxide is suggested by density functional theory (DFT) calculations of the surface energies of MoO2. The thickness of the MoS2 layers can be controlled by precise tuning of sulfur vapor flow and temperatures. MoS2 had an armchair-type winding topology due to the epitaxial relation with the MoO2 NW surface. A single similar to few-layer MoO2/MoS2 core-shell structure showed photoluminescence after the treatment with a superacid. The resistivities of an individual MoO2 NW and a MoS2 NT were measured, and they showed metallic and semiconducting resistivity-temperature relationships, respectively.

The relatively low output performance of triboelectric nanogenerator (TENG), which faces a challenge in performance improvement, limits its practical applications. Here, a high-performance TENG consisting of a silicon carbide@silicon dioxide nanowhiskers/polydimethylsiloxane (SiC@SiO2/PDMS) nanocomposite film and a superhydrophobic aluminum (Al) plate as triboelectric layers is demonstrated. The 7 wt% SiC@SiO2/PDMS TENG presents a peak voltage of 200 V and a peak current of 30 μA, which are ~ 300 and ~ 500% over that of the PDMS TENG, owing to an increase in dielectric constant and a decrease in dielectric loss of the PDMS film because of electric insulated SiC@SiO2 nanowhiskers. Furthermore, a 10 μF capacitor can be charged up to 3 V within ~ 87 s, which can be continuously operated on the electronic watch for 14 s. The work provides an effective strategy for improving output performance of TENG by adding core–shell nanowhiskers to modulate the dielectric properties of organic materials. Graphical abstract

SUMMARY New methods for recycling lithium-ion batteries (LIBs) are needed because traditional recycling methods are based on battery pulverization, which requires pre-treatment of tedious and non-eco-friendly discharging and results in low efficiency and high waste generation in post-treatment. Separating the components of recycled LIB cells followed by reuse or conversion of individual components could minimize material cross-contamination while avoiding excessive consumption of energy and chemicals. However, disposing of charged LIB cells is hazardous due to the high reactivity of lithiated graphite towards cathode materials and air, and the toxicity and flammability of the electrolytes. Here we demonstrate that the disassembly of charged jellyroll LIB cells in water with a single main step reveals no emissions from the cells and near perfect recycling efficiencies that exceed the targets of the US Department of Energy and Batteries Europe. The precise non-destructive mechanical method separates the components from jellyroll cell in water, avoiding both uncontrollable reactions from the anode and burning of the electrolyte, while allowing only a limited fraction of the anode lithium to react with water. Recycling in this way allows the recovery of materials with a value of ∼7.14 $ kg−1 cell, which is higher than that of physical separation (∼5.40 $ kg−1 cell) and much greater than the overall revenue achieved using element extraction methods (

Zinc ion batteries have been extensively studied with an aqueous electrolyte system. However, the batteries suffer from a limited potential window, gas evolution, cathode dissolution, and dendrite formation on the anode. Considering these limitations, we developed an alternative electrolyte system based on deep eutectic solvents (DESs) because of their low cost, high stability, biodegradability, and non-flammability, making them optimal candidates for sustainable batteries. The DES electrolyte enables reversible Zn plating/stripping and effectively suppresses zinc dendrite formation. Furthermore, in-depth characterizations reveal that the energy storage mechanism can be attributed to [ZnCl]

Resistive random access memory (RRAM) is vital to neuromorphic computing applications. However, filamentary RRAM cells are affected by transitions from abrupt switching to analog switching. In this...

A conductive-bridge random access memory (CBRAM) has been considered a promising candidate for the next-generation nonvolatile memory technology because of its excellent performance, for which the resistive switching behavior depends on the formation/dissolution of conducting filaments in an electrolyte layer originated by the cation injection from the active electrode with electrochemical reactions. Typically, the controllability of cations into the electrolyte layer is a main issue, leading to stable switching reliability. In this work, an architecture combining spike-shaped Ag electrodes created by Al2O3 nanopillar arrays as a physical diffusion barrier by glancing angle deposition technology was proposed to localize Ag cation injection for the formation of controllable filaments inside TiOx as the switching layer. Interestingly, the dimension of the Ag plugs defined by the topography of Al2O3 nanopillar arrays can control Ag cation injection to influence the dimensionality of conductive filaments. Compared to the typical planar-Ag/TiOx/Pt device, the spiked-Ag/Al2O3 nanopillar arrays/TiOx/Pt device shows improvement of endurance and voltage disturbance. With enhanced multilevel characteristics, the spiked active-metal-based CBRAM device can be expected to serve as an analogue synapse for neuromorphic applications.

Atomically thin oxide semiconductors are significantly expected for next-generation cost-effective, energy-efficient electronics. A high-performance p-channel oxide thin-film transistor (TFT) was developed using an atomically thin p-type tin monoxide, SnO channel with a thickness of ∼1 nm, which was grown by a vacuum-free, solvent-free, metal-liquid printing process at low temperatures, as low as 250 °C in an ambient atmosphere. By performing oxygen-vacancy defect termination for the bulk-channel and back-channel surface of the ultrathin SnO channel, the presented p-channel SnO TFT exhibited good device performances with a reasonable TFT mobility of ∼0.47 cm2 V-1 s-1, a high on/off current ratio of ∼106, low off current of

A new type of two-dimensional (2D) SnO2 semiconductor-based gate-tunable memristor, that is, a memtransistor, an integrated device of a memristor and a transistor, was demonstrated to advance next-generation neuromorphic computing technology. The polycrystalline 2D-SnO2 memristors derived from a low-temperature and vacuum-free liquid metal process offer several interesting resistive switching properties such as excellent digital/analog resistive switching, multistate storage, and gate-tunability function of resistance switching states. Significantly, the gate tunability function that is not achievable in conventional two-terminal memristors provides the capability to implement heterosynaptic analog switching by regulating gate bias for enabling complex neuromorphic learning. We successfully demonstrated that the gate-tunable synaptic device dynamically modulated the analog switching behavior with good linearity and an improved conductance change ratio for high recognition accuracy learning. The presented gate-tunable 2D-oxide memtransistor will advance neuromorphic device technology and open up new opportunities to design learning schemes with an extra degree of freedom.

Synaptic devices based on non-volatile resistive random access memory (RRAM) have inspired increasing opportunities, including in-memory computing and neural engines, while typical filamentary-based RRAM is subjected to large switching current and causes huge power consumptions. In this work, a low-power memristor based on vertically stacked two-dimensional (2D) layered materials, achieved by plasma-assisted vapor reaction, as the switching material, with which the copper and gold metals as electrodes featured by reversible polymorphous phase changes from a conducting 1T-phase to a semiconducting 2H-one once copper cations interacted between vertical lamellar layers and vice versa was demonstrated. Here, molybdenum diselenide (MoSe2) was chosen as the switching material and the reversible polymorphous phase changes activated by the intercalation of Cu cations were confirmed by pseudo-operando Raman scattering, transmission electron microscopy and scanning photoelectron microscopy under high and low resistance states, respectively. The switching can be activated at about ± 1 V with critical currents less than 10 𝜇A with an on/off ratio of approaching 100 after 100 cycles and low power consumption of ~0.1 microwatt as well as linear weight updates controlled by the amount of intercalation. The work opens alternative feasibility of reversible and all-solid-state metal interactions, which benefits monolithic integrations of 2D materials into operative electronic circuits.

Titanium dioxide (TiO2) has been acknowledged as one of the efficient photocatalysts in the UV region. To extend the photo-absorption region toward visible lights, the TiO2 nanowires enclosed with carbon shells (TiO2@carbon core-shell nanowires) were synthesized by a chemical vapor deposition technique at various temperatures from 650 to 950 °C. The transmission electron microscopy (TEM) and X-ray diffraction (XRD) analyses revealed that TiO2 cores and carbon shells are rutile and graphitic structures, respectively. From Raman spectra, the peak intensity of the Eg mode was observed to be redshifted with elevated growth temperatures due to the increase in oxygen vacancies in the TiO2@carbon core-shell nanowires. From X-ray photoelectron spectroscopy (XPS) results, the oxygen vacancies were strongly related to the Ti3+ ions. The UV–visible spectroscopic studies show a possible decrease in photocatalytic energy from 3.1 to 2.7 eV for the TiO2@carbon core-shell nanowires, indicating that the light absorption was enhanced in the visible-light region. The optical absorbance results confirmed the presence of the mid-gap states due to the oxygen vacancies, which are responsible for the visible-light absorption. The photocatalytic activity of the TiO2@carbon core-shell nanowires studied by methylene blue (MB) dye degradation is effective under visible lights.

In this work, we, for the first time, observed the remarkable thermoelectric properties of a few high-quality PtSe2 layered films fabricated by a post selenization of Pt thin films. An excellent po...

The portable power bank as an energy storage device has received tremendous attention while the limited capacity and periodical charging are critical issues. Here, a self-charging power system (SCPS) consisting of a 0.94(Bi

Sodium-selenium (Na-Se) batteries have aroused enormous attention due to the large abundance of the element sodium as well as the high electronic conductivity and volumetric capacity of selenium. In this battery system, some primary advances in electrode materials have been achieved, mainly involving the design of Se-based cathode materials. In this Review, the electrochemical mechanism is discussed, thus revealing the main challenges in Na-Se batteries. Then, the advances in the design of Se-based cathode materials for Na-ion storage are systemically summarized, classified, and discussed, including Se/carbon composite, Se/polar material/carbon composites, and hybrid SexSy alloys. Some potential strategies enabling the improvement of crucial challenges and enhancement of electrochemical performance are also proposed to provide guidelines for the enhancements of Na-ion storage. An outlook for future valuable research directions is proposed to understand more deeply the electrochemical mechanism of Na-Se batteries and promote their further developments in full cell performance and commercialization.

Over the past decade, lead halide perovskite materials have emerged as a promising candidate for third-generation solar cells and have progressed extremely rapidly. The tunable band gap, strong absorption, high power conversion efficiency, and low cost of perovskite solar cells makes them highly competitive compared to current commercialized silicon-based and thin film-based photovoltaic technologies. However, commercial products unavoidably result in large amounts of waste and end-of-life devices which can cause serious environmental impacts. To address this issue, recycle and recovery technologies of perovskite solar cells should be researched and developed proactively. In this review, the development of perovskite solar cells and their necessary materials are first introduced. Subsequently, the potential environmental impacts of perovskite solar cells are discussed, including their stability and lifetime, use of critical materials (i.e., indium, tin, and lead), and toxicity. Accordingly, the present recycle and recovery technologies are reviewed, providing information and recommendations of key strategies for recycling and recovering. Finally, future works and strategies for recycling and recovering perovskite solar cells are proposed.

Here, a current-accelerated phase cycling by an in situ current-induced oxidation process was demonstrated to reversibly switch the local metallic Cu and semiconducting Cu2O phases of patterned polycrystalline copper nanobelts. Once the Cu nanobelts were applied by a direct-current bias of ∼0.5 to 1 V in air with opposite polarities, the resistance between several hundred ohms and more than MΩ can be manipulated. In practice, the thickness of 60 nm with a moderate grain size inhibiting both electromigration and permanent oxidation is the optimized condition for reversible switching when the oxygen supply is sufficient. More than 40% of the copper localized beneath the positively biased electrode was oxidized assisted by the Joule heating, blocking the current flow. On the contrary, the reduction reaction of Cu2O was activated by the thermally assisted electromigration of Cu atoms penetrating the interlayer at the reverse bias. Finally, based on a high on/off ratio, the fast switching and the scalable production, reusable feasibility based on copper nanobelts such as the memristor array was demonstrated.

Silicon (Si) anode materials have attracted substantial interest due to its high theoretical capacity. Here, the growth of helical Si@Cu3Si nanorod arrays via glancing angle deposition (GLAD) followed by an annealing process was reported. The pre-deposited Cu atoms were driven into Si-nanorods and successfully reacted with Si to form Si-Cu alloy at a high temperature. Through varying the rotation rate and annealing temperature, the resultant Si@Cu3Si nanorod arrays showed a reasonably accessible surface area with precise control spacing behavior in favor of accommodating Si volume expansion. Meanwhile, the Si@Cu3Si anode materials showed higher electrical conductivity, facilitating the Li+ ion diffusion and electron transfer. The Si@Cu3Si nanorod arrays in half cell exhibited a volumetric capacity as high as 3350.1 mAh cm−3 at the rate of 0.25 C and could maintain 1706.7 mAh cm−3 after 100 cycles, which were superior to pristine Si materials. This facile and innovative technology provided new insights into the development of Si-based electrodes materials.

In this work, the effects of gamma-ray irradiation (up to 3 kGy) on the structural and electronic properties of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), irradiated in air and vacuum environments are systematically investigated. Raman spectroscopy indicates that there is no significant change in structural conformation of PEDOT:PSS film after gamma-ray irradiation. However, the conductivity of the film decreases as a function of dose in both air and vacuum environments, which can be deduced as a result of defects created in the structure. Hall effect measurements showed higher carrier concentration when the samples are irradiated under vacuum in comparison to the air environment, whereas mobility decreases as a function of dose irrespective of the environment. Furthermore, the electron spin resonance spectra provided evidence of the evolution of polaron population after gamma-ray exposure of 3 kGy, due to the decrease in charge delocalization and molecular ordering of the molecules. This decrease in conductivity and mobility of the PEDOT:PSS films irradiated in air and vacuum environments can be mainly ascribed to the defects and radical formation after gamma-ray exposure, favoring chain scission or cross-linking of the polymers.