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Chemical vapour deposition (CVD) is a powerful technology for producing high-quality solid thin films and coatings. Although widely used in modern industries, it is continuously being developed as it is adapted to new materials. Today, CVD synthesis is being pushed to new heights with the precise manufacturing of both inorganic thin films of 2D materials and high-purity polymeric thin films that can be conformally deposited on various substrates. In this Primer, an overview of the CVD technique, including instrument construction, process control, material characterization and reproducibility issues, is provided. By taking graphene, 2D transition metal dichalcogenides (TMDs) and polymeric thin films as typical examples, the best practices for experimentation involving substrate pretreatment, high-temperature growth and post-growth processes are presented. Recent advances and scaling-up challenges are also highlighted. By analysing current limitations and optimizations, we also provide insight into possible future directions for the method, including reactor design for high-throughput and low-temperature growth of thin films. This Primer on chemical vapour deposition summarizes current and emerging experimental set-ups as well as common characterization approaches used to determine thin film formation and quality as applied to graphene and other novel 2D materials.

Graphene films grown by chemical vapour deposition have unusual physical and chemical properties that offer promise for applications such as flexible electronics and high-frequency transistors1–10. However, wrinkles invariably form during growth because of the strong coupling to the substrate, and these limit the large-scale homogeneity of the film1–4,11,12. Here we develop a proton-assisted method of chemical vapour deposition to grow ultra-flat graphene films that are wrinkle-free. Our method of proton penetration13–17 and recombination to form hydrogen can also reduce the wrinkles formed during traditional chemical vapour deposition of graphene. Some of the wrinkles disappear entirely, owing to the decoupling of van der Waals interactions and possibly an increase in distance from the growth surface. The electronic band structure of the as-grown graphene films shows a V-shaped Dirac cone and a linear dispersion relation within the atomic plane or across an atomic step, confirming the decoupling from the substrate. The ultra-flat nature of the graphene films ensures that their surfaces are easy to clean after a wet transfer process. A robust quantum Hall effect appears even at room temperature in a device with a linewidth of 100 micrometres. Graphene films grown by proton-assisted chemical vapour deposition should largely retain their intrinsic performance, and our method should be easily generalizable to other nanomaterials for strain and doping engineering. A growth process in which protons decouple graphene from the underlying substrate greatly reduces the number of wrinkles that usually degrade large graphene films grown by chemical vapour deposition.

From a device application point of view, the extreme mechanical strength of graphene is highly desirable. However, the unavoidable polycrystalline nature of graphene films produced by chemical vapor deposition (CVD) leads to significant fluctuations in mechanical properties. Although the effects of atomic defects or grain boundaries (GBs) on mechanical strength have been widely studied and some modifications have been applied to enhance the stiffness of graphene, the problems of fragility as well as significantly reduced breaking strength arise. Here we report a systematic study on the effect of elastic modulus and breaking strength of CVD-derived graphene films with a controlled density and distribution of GBs. We find that graphene films become much stronger by hugely increasing the density of GBs without triple junctions (TJs) formed inside, in analogy to the two-dimensional (2D) plum pudding structures. The comprehensive performance with a 2D Young's modulus of 436 N/m (∼1.3 TPa) and 2D breaking strength of 43 N/m (∼128 GPa) can be achieved with the average grain size of 20 nm. Moreover, the existence of TJs will slightly reduce the strength in these GB structures. Due to defect types, the graphene films will show various tearing behaviors after indentation. All these mechanical studies of GBs provide a guideline to obtain the optimal performance of 2D materials through GB structure engineering.