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Two dimensional (2D) semiconductors present unique opportunities to intertwine optical and magnetic functionalities and to tune these performances through defects and dopants. Here, we integrate exciton pumping into a quantum sensing protocol on nitrogen-vacancy centers in diamond to image the optically-induced transient stray fields in few-layer, antiferromagnetic CrCl$_3$. We discover that exciton recombination enhances the in-plane magnetization of the CrCl$_3$ layers, with a predominant effect in the surface monolayers. Concomitantly, time-resolved photoluminescence measurements reveal that nonradiative exciton recombination intensifies in atomically thin CrCl$_3$ with tightly localized, nearly dipole-forbidden excitons and amplified surface-to-volume ratio. Supported by experiments under controlled surface exposure and density functional theory calculations, we interpret the magnetically enhanced state to result from a defect-assisted Auger recombination that optically activates electron transfer between water vapor related surface impurities and the spin-polarized conduction band. Our work validates defect engineering as a route to enhance intrinsic magnetism in single magnetic layers and opens a novel experimental platform for studying optically-induced, transient magnetism in condensed matter systems., Comment: 11 pages, 8 figures

Using circularly-polarized light to control quantum matter is a highly intriguing topic in physics, chemistry and biology. Previous studies have demonstrated helicity-dependent optical control of spatial chirality and magnetization $M$. The former is central for asymmetric synthesis in chemistry and homochirality in bio-molecules, while the latter is of great interest for ferromagnetic spintronics. In this paper, we report the surprising observation of helicity-dependent optical control of fully-compensated antiferromagnetic (AFM) order in 2D even-layered MnBi$_2$Te$_4$, a topological Axion insulator with neither chirality nor $M$. We further demonstrate helicity-dependent optical creation of AFM domain walls by double induction beams and the direct reversal of AFM domains by ultrafast pulses. The control and reversal of AFM domains and domain walls by light helicity have never been achieved in any fully-compensated AFM. To understand this optical control, we study a novel type of circular dichroism (CD) proportional to the AFM order, which only appears in reflection but is absent in transmission. We show that the optical control and CD both arise from the optical Axion electrodynamics, which can be visualized as a Berry curvature real space dipole. Our Axion induction provides the possibility to optically control a family of $\mathcal{PT}$-symmetric AFMs such as Cr$_2$O$_3$, CrI$_3$ and possibly novel states in cuprates. In MnBi$_2$Te$_4$, this further opens the door for optical writing of dissipationless circuit formed by topological edge states.

Materials that rectify light into current in their bulk are desired for optoelectronic applications. In inversion-breaking Weyl semimetals, bulk photocurrents may arise due to nonlinear optical processes that are enhanced near the Weyl nodes. However, the photoresponse of these materials is commonly studied by scanning photocurrent microscopy (SPCM), which convolves the effects of photocurrent generation and collection. Here, we directly image the photocurrent flow inside the type-II Weyl semimetals WTe2 and TaIrTe4 using high-sensitivity quantum magnetometry with nitrogen-vacancy center spins. We elucidate an unknown mechanism for bulk photocurrent generation termed the anisotropic photothermoelectric effect (APTE), where unequal thermopowers along different crystal axes drive intricate circulations of photocurrent around the photoexcitation. Using simultaneous SPCM and magnetic imaging at the sample's interior and edges, we visualize how the APTE stimulates the long-range photocurrent collected in our Weyl semimetal devices through the Shockley-Ramo theorem. Our results highlight an overlooked, but widely relevant source of current flow and inspire novel photodetectors using homogeneous materials with anisotropy., Comment: Revised submitted version; 17 pages, 4 main figures, 5 supporting figures

While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization, AFMs may appear to behave like any non-magnetic material; However, such a seemingly mundane macroscopic magnetic property is highly nontrivial at microscopic level, where opposite spin alignment within the AFM unit cell forms a rich internal structure. In topological AFMs, such an internal structure leads to a new possibility, where topology and Berry phase can acquire distinct spatial textures. Here, we study this exciting possibility in an AFM Axion insulator, even-layered MnBi$_2$Te$_4$ flakes, where spatial degrees of freedom correspond to different layers. Remarkably, we report the observation of a new type of Hall effect, the layer Hall effect, where electrons from the top and bottom layers spontaneously deflect in opposite directions. Specifically, under no net electric field, even-layered MnBi$_2$Te$_4$ shows no anomalous Hall effect (AHE); However, applying an electric field isolates the response from one layer and leads to the surprising emergence of a large layer-polarized AHE (~50%$\frac{e^2}{h}$). Such a layer Hall effect uncovers a highly rare layer-locked Berry curvature, which serves as a unique character of the space-time $\mathcal{PT}$-symmetric AFM topological insulator state. Moreover, we found that the layer-locked Berry curvature can be manipulated by the Axion field, E$\cdot$B, which drives the system between the opposite AFM states. Our results achieve previously unavailable pathways to detect and manipulate the rich internal spatial structure of fully-compensated topological AFMs. The layer-locked Berry curvature represents a first step towards spatial engineering of Berry phase, such as through layer-specific moir\'e potential., Comment: A revised version of this article is published in Nature

Precision magnetometry is fundamental to the development of novel magnetic materials and devices. Recently, the nitrogen-vacancy (NV) center in diamond has emerged as a promising probe for static magnetism in 2D van der Waals materials, capable of quantitative imaging with nanoscale spatial resolution. However, the dynamic character of magnetism, crucial for understanding the magnetic phase transition and achieving technological applications, has rarely been experimentally accessible in single 2D crystals. Here, we coherently control the NV center's spin precession to achieve ultra-sensitive, quantitative ac susceptometry of a 2D ferromagnet. Combining dc hysteresis with ac susceptibility measurements varying temperature, field, and frequency, we illuminate the formation, mobility, and consolidation of magnetic domain walls in few-layer CrBr3. We show that domain wall mobility is enhanced in ultrathin CrBr3, with minimal decrease for excitation frequencies exceeding hundreds of kilohertz, and is influenced by the domain morphology and local pinning of the flake. Our technique extends NV magnetometry to the multi-functional ac and dc magnetic characterization of wide-ranging spintronic materials at the nanoscale., Comment: 11 pages, 5 figures