206 results on '"Zabrodskii, A. G."'
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2. Detection of the Ferromagnetic Properties of Si:P in the Region of an Insulator–Metal Phase Transition
3. Technique for Magnetic Susceptibility Determination in the High Doped Semiconductors by Electron Spin Resonance
4. Model of hopping dc conductivity via nearest neighbor boron atoms in moderately compensated diamond crystals
5. Carbon Supported Polyaniline as Anode Catalyst: Pathway to Platinum-Free Fuel Cells
6. Model of DC Tunneling Conductivity via Hydrogen‐Like Impurities in Heavily Doped Compensated Semiconductors
7. Spectroscopy of the gap states in Ge based on its neutron transmutation doping kinetics
8. Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga)
9. Gas transfer and water vapor condensation in cathode layers of air–hydrogen fuel cells
10. A Quasi-Classical Model of the Hubbard Gap in Lightly Compensated Semiconductors
11. Detection of impurity diamagnetic susceptibility and its behavior in n-Ge:As in the region of the insulator–metal phase transition
12. Evgenii Andreevich Vinogradov (on his 80th birthday)
13. Determination of the magnetic susceptibility of “poor” conductors by electron paramagnetic resonance
14. Low-temperature variation of magnetic order in a nonmagnetic n-Ge:As semiconductor in the vicinity of the metal-insulator phase transition
15. Curie–Weiss behavior of the low-temperature paramagnetic susceptibility of semiconductors doped and compensated with hydrogen-like impurities
16. Specific features of the anisotropy of low-temperature microwave magnetoresistivity of lightly doped p-Ge due to the presence of light and heavy holes
17. X-ray imaging of structural defects in Si1−x Ge x single crystals using a white synchrotron beam
18. Portable power source based on air-hydrogen fuel cells with free-breathing cathodes
19. Maximum hopping direct current conductivity via hydrogen-like impurities in semiconductors
20. Spin-peierls transition in the random impurity sublattice of a semiconductor
21. Antiferromagnetic spin glass in doped Ge near insulator-metal transition
22. Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects)
23. Electron spin resonance of interacting spins in n-Ge: II. Change in the width and shape of lines
24. Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level
25. Nanocomposites with mixed electronic and protonic conduction for electrocatalysis
26. Quasi-static capacitance of a weakly compensated semiconductor with hopping conduction (on the example of p-Si:B)
27. Low-temperature microwave magnetoresistance of lightly doped p-Ge and p-Ge1−x Six
28. X-ray studies of Si1−x Gex single crystals
29. Fluctuation model of the high-frequency hopping electrical conductivity of moderately compensated semiconductors with hydrogenic impurities
30. Atomic-force-microscopy visualization of Si nanocrystals in SiO2 thermal oxide using selective etching
31. Specific features of electron spin resonance in 4H-SiC in the vicinity of the insulator-metal phase transition: II. Analysis of the width and shape of lines
32. Electrostatic models of insulator-metal and metal-insulator concentration phase transitions in Ge and Si crystals doped by hydrogen-like impurities
33. Aleksandr Aleksandrovich Kaplyanskii (on his 90th birthday)
34. Alternative Energy: from Economy to Agro-Photovoltaics
35. Numerical simulation of the temperature dependence of the ionization energy of hydrogen-like impurities in semiconductors: Application to transmutation-doped Ge: Ga
36. Special features of electron spin resonance in 4H-SiC in the vicinity of the insulator-metal phase transition: I. Effects of spin interaction
37. Microwave magnetoresistance of compensated p-Ge:Ga in the region of the insulator-metal phase transition
38. Hysteresis of magnetoresistance in neutron-transmutation-doped Ge in the region of hopping transport over the Coulomb-gap states
39. The magnetoresistance of compensated Ge:As at microwave frequencies in the vicinity of the metal-insulator phase transition
40. A lattice model of nearest-neighbor hopping conduction and its application to neutron-doped Ge: Ga
41. Electron spin resonance in the vicinity of metal-insulator transition in compensated n-Ge:As
42. Membrane-electrode assemblies with high specific power based on functionalized carbon nanotubes
43. In memory of Dmitrii Aleksandrovich Varshalovich
44. The Peierls phase transition in n-Ge caused by impurity interaction
45. Contribution of light holes to the Hall effect for the complex valence band in germanium and its dependence on doping level
46. Distinctive features of the magnetoresistance of degenerately doped n-InAs and their influence on magnetic-field-dependent microwave absorption
47. Thermopower of transmutation-doped Ge:Ga in the region for hopping conductivity
48. Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond.
49. In memory of Vadim Vasil'evich Afrosimov
50. In memory of Vasilii Ivanovich Shveikin (4 February 1935 – 4 January 2018)
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