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Two-dimensional electron systems (2DES) are promising for investigating correlated quantum phenomena. In particular, 2D oxides provide a platform that can host various quantum phases such as quantized Hall effect, superconductivity, or magnetism. The realization of such quantum phases in 2D oxides heavily relies on dedicated heterostructure growths. Here we show the integer quantum Hall effect achieved in chemical vapor deposition grown Bi2O2Se - a representative member of a more accessible oxide family. A single or few sub-band 2DES can be prepared in thin films of Bi2O2Se, where the film thickness acts as the sole design parameter and the sub-band occupation is determined by the electric field effect. This new oxide platform exhibits characteristic advantages in structural flexibility due to its layered nature, making it suitable for scalable growth. The unique small mass distinguishes Bi2O2Se from other high-mobility oxides, providing a new platform for exploring quantum Hall physics in 2D oxides.

The simultaneous occurrence of electric-field controlled superconductivity and spin-orbit interaction makes two-dimensional electron systems (2DES) constructed from perovskite transition metal oxides promising candidates for the next generation of spintronics and quantum computing. It is, however, essential to understand the electronic bands thoroughly and verify the predicted electronic states experimentally in these 2DES to advance technological applications. Here, we present novel insights into the electronic states of the 2DES at oxide interfaces through comprehensive investigations of Shubnikov-de Haas oscillations in two different systems: EuO/KTaO$_3$ (EuO/KTO) and LaAlO$_3$/SrTiO$_3$ (LAO/STO). To accurately resolve these oscillations, we conducted transport measurements in high magnetic fields up to 60 T and low temperatures down to 100 mK. For 2D confined electrons at both interfaces, we observed a progressive increase of oscillations frequency and cyclotron mass with the magnetic field. We interpret these intriguing findings by considering the existence of non-trivial electronic bands, for which the $E-k$ dispersion incorporates both linear and parabolic dispersion relations. In addition to providing experimental evidence for topological-like electronic states in KTO-2DES and STO-2DES, the unconventional oscillations presented in this study establish a new paradigm for quantum oscillations in 2DES based on perovskite transition metal oxides, where the oscillations frequency exhibits quadratic dependence on the magnetic field.

The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibrations are strongly suppressed and bulk carrier scattering is dominated by disorder. However, due to large Landau level (LL) separation (~2000 K at B = 30 T), graphene can support the QH effect up to room temperature (RT), concomitant with a non-negligible population of acoustic phonons with a wave-vector commensurate to the inverse electronic magnetic length. Here, we demonstrate that graphene encapsulated in hexagonal boron nitride (hBN) realizes a novel transport regime, where dissipation in the QH phase is governed predominantly by electron-phonon scattering. Investigating thermally-activated transport at filling factor 2 up to RT in an ensemble of back-gated devices, we show that the high B-field behaviour correlates with their zero B-field transport mobility. By this means, we extend the well-accepted notion of phonon-limited resistivity in ultra-clean graphene to a hitherto unexplored high-field realm., Comment: 17 pages, 4 figures. Supplementary information available at https://doi.org/10.1038/s41467-023-35986-3

The conventional Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state relies on the Zeeman effect of an external magnetic field to break time-reversal symmetry, forming a state of finite-momentum Cooper pairing. In superconductors with broken inversion symmetries, the Rashba or Ising-type spin-orbit coupling (SOC) can interact with either the Zeeman or the orbital effect of magnetic fields, extending the range of possible FFLO states, though evidence for these more exotic forms of FFLO pairing has been lacking. Here we report the discovery of an unconventional FFLO state induced by coupling the Ising SOC and the orbital effect in multilayer 2H-NbSe2. Transport measurements show that the translational and rotational symmetries are broken in the orbital FFLO state, providing the hallmark signatures of finite momentum cooper pairings. We establish the entire orbital FFLO phase diagram, consisting of normal metal, uniform Ising superconducting phase, and a six-fold orbital FFLO state. This study highlights an alternative route to finite-momentum superconductivity and provides a universal mechanism to prepare orbital FFLO states in similar materials with broken inversion symmetries.

Antiferromagnetic (AFM) materials possess a well-recognized potential for ultrafast data processing thanks to their intrinsic ultrafast spin dynamics, absence of stray fields, and large spin transport effects. The very same properties, however, make their manipulation difficult, requiring frequencies in THz range and magnetic fields of tens of Teslas. Switching of AFM order implies going into the nonlinear regime, a largely unexplored territory. Here we use THz light from a free electron laser to drive antiferromagnetic NiO into a highly nonlinear regime and steer it out of nonlinearity with magnetic field from a 33-Tesla Bitter magnet. This demonstration of large-amplitude dynamics represents a crucial step towards ultrafast resonant switching of AFM order.

Recent demonstrations of the electrical switching of antiferromagnets (AFs) have given an enormous impulse to the field of AF spintronics. Many of these observations are plagued by non-magnetic effects that are very difficult to distinguish from the actual magnetic ones. Here, we study the electrical switching of thin (5 nm) NiO films in Pt/NiO devices using magnetic fields up to 15 T to quantitatively disentangle these magnetic and non-magnetic effects. We demonstrate that these fields suppress the magnetic components of the electrical switching of NiO, but leave the non-magnetic components intact. Using a monodomainization model the contributions are separated, showing how they behave as a function of the current density. These results show that combining electrical methods and strong magnetic fields can be an invaluable tool for AF spintronics, allowing for implementing and studying electrical switching of AFs in more complex systems.

We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly increased mobility of 260,000 cm$^2$/Vs at a rather low density of $2.4\times10^{11}$ cm$^{-2}$. Using magneto-transport experiments, we characterize spin-orbit interactions by measuring weak antilocalization. Furthermore, by measuring Shubnikov-de Haas oscillations in tilted magnetic fields, we find that the g-factor agrees with $k \cdot p$ theory calculations at low magnetic fields but grows with spin polarization and carrier density at high magnetic fields. Additionally, signatures of Ising quantum Hall ferromagnetism are found at filling factor $\nu$ = 2 for tilt angles where the Landau level energy equals the Zeeman energy. Despite the high mobility, the undoped InSb quantum wells exhibit no fractional quantum Hall effect up to magnetic fields of 25 T., Comment: 37 pages, 8 figures

Composite quantum materials are the ideal examples of multifunctional systems which simultaneously host more than one novel quantum phenomenon in physics. Here, we present a combined theoretical and experimental study to demonstrate the presence of an extremely large exchange bias in the range 0.8 T - 2.7 T and a fully compensated magnetic state (FCF) in a special type of Pt and Ni doped Mn$_3$In cubic alloy. Here, oppositely aligned uncompensated moments in two different atomic clusters sum up to zero which are responsible for the FCF state. Our Density functional theory (DFT) calculations show the existence of several possible ferrimagnetic configurations with the FCF as the energetically most stable one. The microscopic origin of the large exchange bias can be interpreted in terms of the exchange interaction between the FCF background and the uncompensated ferrimagnetic clusters stabilized due to its negligible energy difference with respect to the FCF phase. We utilize pulsed magnetic field up to 60 T and 30 T static field magnetization measurements to confirm the intrinsic nature of exchange bias in our system. Finally, our Hall effect measurements demonstrate the importance of uncompensated noncoplanar interfacial moments for the realization of large EB. The present finding of gigantic exchange bias in a unique compensated ferrimagnetic system opens up a direction for the design of novel quantum phenomena for the technological applications., Comment: 13 pages, 18 figures

Investigating Shubnikov-de Haas (SdH) oscillations in high magnetic fields, we experimentally infer the electronic band structure of the quasi-two-dimensional electron gas (2DEG) at the ionic-liquid gated amorphous (a)-LaAlO$_3$/KTaO$_3$ interface. The angular dependence of SdH oscillations indicates a 2D confinement of a majority of electrons at the interface. However, additional SdH oscillations with an angle-independent frequency observed at high tilt angles indicate the coexistence of 3D charge carriers extending deep into the KTaO$_3$. The SdH oscillations measured in magnetic fields perpendicular to the interface show four frequencies corresponding to four 2D subbands with different effective masses (0.20 $m_e$ - 0.55 $m_e$). The single-frequency oscillations originating from 3D electrons yields a larger effective mass of $\sim$ 0.70 $m_e$. Overall, the inferred subbands are in good agreement with the theoretical-calculations and angle-resolved photoemission spectroscopy studies on 2DEG at KTaO$_3$ surface.

We investigate the phononic in-plane longitudinal low-temperature thermal conductivity kappa_ab of the Kitaev quantum magnet alpha-RuCl3 for large in-plane magnetic fields up to 33 T. Our data reveal for fields larger than the critical field Bc ~ 8 T, at which the magnetic order is suppressed, a dramatic increase of kappa_ab at all temperatures investigated. The analysis of our data shows that the phonons are not only strongly scattered by a magnetic mode at relatively large energy which scales roughly linearly with the magnetic field, but also by a small-energy mode which emerges near Bc with a square-root-like field dependence. While the former is in striking agreement with recent spin wave theory (SWT) results of the magnetic excitation spectrum at the Gamma point, the energy of the latter is too small to be compatible with the SWT-expected magnon gap at the M point, despite the matching field dependence. Therefore, an alternative scenario based on phonon scattering off the thermal excitation of random-singlet states is proposed., Comment: 8 pages, 4 figures

High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the Shubnikov-de Haas oscillations and find a value for the effective g-factor of $\mid g^{\ast}\mid $ =35$\pm$4 and a value for the effective mass of $m^*\approx0.017 m_0$, where $m_0$ is the electron mass in vacuum. Our measurements are performed in a magnetic field and a density range where the enhancement mechanism of the effective g-factor can be neglected. Accordingly, the obtained effective g-factor and the effective mass can be quantitatively explained in a single particle picture. Additionally, we explore the magneto-transport up to magnetic fields of 35 T and do not find features related to the fractional quantum Hall effect., Comment: 18 Pages, 5 Figures

Spin excitations of magnetoelectric LiNiPO$_4$ are studied by infrared absorption spectroscopy in the THz spectral range as a function of magnetic field through various commensurate and incommensurate magnetically ordered phases up to 33\,T. Six spin resonances and a strong two-magnon continuum are observed in zero magnetic field. Our systematic polarization study reveals that some of the excitations are usual magnetic-dipole active magnon modes, while others are either electromagnons, electric-dipole active, or magnetoelectric, both electric- and magnetic-dipole active spin excitations. Field-induced shifts of the modes for all three orientations of the field along the orthorhombic axes allow us to refine the values of the relevant exchange couplings, single-ion anisotropies, and the Dzyaloshinskii-Moriya interaction on the level of a four-sublattice mean-field spin model. This model also reproduces the spectral shape of the two-magnon absorption continuum, found to be electric-dipole active in the experiment.

The electric-field tunable Rashba spin-orbit coupling at the LaAlO3/SrTiO3 interface shows potential applications in spintronic devices. However, different gate dependence of the coupling strength has been reported in experiments. On the theoretical side, it has been predicted that the largest Rashba effect appears at the crossing point of the $d_{xy}$ and $d_{xz,yz}$ bands. In this work, we study the tuneability of the Rashba effect in LaAlO3/SrTiO3 by means of back-gating. The Lifshitz transition was crossed multiple times by tuning the gate voltage so that the Fermi energy is tuned to approach or depart from the band crossing. By analyzing the weak antilocalization behavior in the magnetoresistance, we find that the maximum spin-orbit coupling effect occurs when the Fermi energy is near the Lifshitz point. Moreover, we find strong evidence for a single spin winding at the Fermi surface., Comment: 5 pages, 4 figures

In LaAlO3/SrTiO3 heterostructures, a commonly observed but poorly understood phenomenon is that of electron trapping in back-gating experiments. In this work, by combining magnetotransport measurements and self-consistent Schroedinger-Poisson calculations, we obtain an empirical relation between the amount of trapped electrons and the gate voltage. We find that the trapped electrons follow an exponentially decaying spatial distribution away from the interface. However, contrary to earlier observations, we find that the Fermi level remains well within the quantum well. The enhanced trapping of electrons induced by the gate voltage can therefore not be explained by a thermal escape mechanism. Further gate sweeping experiments strengthen our conclusion that the thermal escape mechanism is not valid. We propose a new mechanism which involves the electromigration and clustering of oxygen vacancies in SrTiO3. Our work indicates that electron trapping is a universal phenomenon in SrTiO3-based two-dimensional electron systems., Comment: manuscript + supplementary information, 8 pages

The interface between the two insulating oxides SrTiO$_3$ and LaAlO$_3$ gives rise to a two-dimensional electron system with intriguing transport phenomena, including superconductivity, which are controllable by a gate. Previous measurements on the (001) interface have shown that the superconducting critical temperature, the Hall density, and the frequency of quantum oscillations, vary nonmonotonically and in a correlated fashion with the gate voltage. In this paper we experimentally demonstrate that the (111) interface features a qualitatively distinct behavior, in which the frequency of Shubnikov-de Haas oscillations changes monotonically, while the variation of other properties is nonmonotonic albeit uncorrelated. We develop a theoretical model, incorporating the different symmetries of these interfaces as well as electronic-correlation-induced band competition. We show that the latter dominates at (001), leading to similar nonmonotonicity in all observables, while the former is more important at (111), giving rise to highly curved Fermi contours, and accounting for all its anomalous transport measurements., Comment: 6+7 pages, 4+6 figures, Published Version

Few-layer black phosphorus possesses unique electronic properties giving rise to distinct quantum phenomena and thus offers a fertile platform to explore the emergent correlation phenomena in low dimensions. A great progress has been demonstrated in improving the quality of hole-doped few-layer black phosphorus and its quantum transport studies, whereas the same achievements are rather modest for electron-doped few-layer black phosphorus. Here, we report the ambipolar quantum transport in few-layer black phosphorus exhibiting undoubtedly the quantum Hall effect for hole transport and showing clear signatures of the quantum Hall effect for electron transport. By bringing the spin-resolved Landau levels of the electron-doped black phosphorus to the coincidence, we measure the spin susceptibility $\chi_s=m^\ast g^\ast=1.1\pm0.03$. This value is larger than for hole-doped black phosphorus and illustrates an energetically equidistant arrangement of spin-resolved Landau levels. Evidently, the n-type black phosphorus offers a unique platform with equidistant sequence of spin-up and spin-down states for exploring the quantum spintronic.

The peculiar band structure of semimetals exhibiting Dirac and Weyl crossings can lead to spectacular electronic properties such as large mobilities accompanied by extremely high magnetoresistance. In particular, two closely neighbouring Weyl points of the same chirality are protected from annihilation by structural distortions or defects, thereby significantly reducing the scattering probability between them. Here we present the electronic properties of the transition metal diphosphides, WP2 and MoP2, that are type-II Weyl semimetals with robust Weyl points. We present transport and angle resolved photoemission spectroscopy measurements, and first principles calculations. Our single crystals of WP2 display an extremely low residual low-temperature resistivity of 3 nohm-cm accompanied by an enormous and highly anisotropic magnetoresistance above 200 million % at 63 T and 2.5 K. These properties are likely a consequence of the novel Weyl fermions expressed in this compound. We observe a large suppression of charge carrier backscattering in WP2 from transport measurements., Comment: Appeared in Nature Communications

Weyl and Dirac fermions have created much attention in condensed matter physics and materials science. Recently, several additional distinct types of fermions have been predicted. Here, we report ultra-high electrical conductivity in MoP at low temperature, which has recently been established as a triple point Fermion material. Here we show that the electrical resistivity is 6 n-ohm cm at 2 K with a large mean free path of 11 microns. de Haas-van Alphen oscillations reveal spin splitting of the Fermi surfaces. In contrast to noble metals with similar conductivity and number of carriers, the magnetoresistance in MoP does not saturate up to 9 T at 2 K. Interestingly, the momentum relaxing time of the electrons is found to be more than 15 times larger than the quantum coherence time. This difference between the scattering scales shows that momentum conserving scattering dominates in MoP at low temperatures., Comment: Updated texts and supplementary

Topological materials ranging from topological insulators to Weyl and Dirac semimetals form one of the most exciting current fields in condensed-matter research. Many half-Heusler compounds, RPtBi (R= rare earth) have been theoretically predicted to be topological semimetals. Among various topological attributes envisaged in RPtBi, topological surface states, chiral anomaly and planar Hall effect have been observed experimentally. Here, we report on an unusual intrinsic anomalous Hall effect (AHE) in the antiferromagnetic Heusler Weyl semimetal compounds GdPtBi and NdPtBi that is observed over a wide temperature range. In particular, GdPtBi exhibits an anomalous Hall conductivity of up to 60 ohm-1cm-1 and an anomalous Hall angle as large as 23%. Muon spin resonance (mu-SR) studies of GdPtBi indicate a sharp antiferromagnetic transition (T_N) at 9 K without any noticeable magnetic correlations above T_N. Our studies indicate that Weyl points in these half-Heuslers are induced by a magnetic field via exchange-splitting of the electronic bands at or near to the Fermi energy which is the source of the chiral anomaly and the AHE., Comment: 24 pages including supplementary information

Topological insulators are characterized by an inverted band structure in the bulk and metallic surface states on the surface. In LaBi, a semimetal with a band inversion equivalent to a topological insulator, we observe surface state like behavior in the magnetoresistance. The electrons responsible for this pseudo two dimensional transport, however, originate from the bulk states rather topological surface states, which is witnessed by the angle dependent quantum oscillations of the magnetoresistance and ab initio calculations. As a consequence, the magnetoresistance exhibits strong anisotropy with large amplitude (~ 10^5 %)., Comment: 21 pages, 4 figures and supplementary information

The discovery of materials with improved functionality can be accelerated by rational material design. Heusler compounds with tunable magnetic sublattices allow to implement this concept to achieve novel magnetic properties. Here, we have designed a family of Heusler alloys with a compensated ferrimagnetic state. In the vicinity of the compensation composition in Mn-Pt-Ga, a giant exchange bias (EB) of more than 3 T and a similarly large coercivity are established. The large exchange anisotropy originates from the exchange interaction between the compensated host and ferrimagnetic clusters that arise from intrinsic anti-site disorder. We demonstrate the applicability of our design concept on a second material, Mn-Fe-Ga, with a magnetic transition above room temperature, exemplifying the universality of the concept and the feasibility of room-temperature applications. Our study points to a new direction for novel magneto-electronic devices. At the same time it suggests a new route for realizing rare-earth free exchange-biased hard magnets, where the second quadrant magnetization can be stabilized by the exchange bias., Comment: Four figures

We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we are in the regime of the quantum spin Hall effect and observe an ambipolar quantized Hall resistance by tuning the Fermi energy through the bulk band gap. At room temperature, we find electron and hole conduction that can be described by a classical two-carrier model. Above the onset of quantized magnetotransport at low temperature, we observe a pronounced linear magnetoresistance that develops from a classical quadratic low-field magnetoresistance if electrons and holes coexist. Temperature-dependent bulk band structure calculations predict a transition from a conventional semiconductor to a topological insulator in the regime where the linear magnetoresistance occurs., Comment: 7 pages, 6 figures

Recent experiments have revealed spectacular transport properties of conceptually simple semimetals. For example, normal semimetals (e.g. WTe$_2$) have started a new trend to realize a large magnetoresistance, which is the change of electrical resistance by an external magnetic field. Weyl semimetal (WSM) is a topological semimetal with massless relativistic electrons as the three-dimensional analogue of graphene and promises exotic transport properties and surface states, which are different from those of the famous topological insulators (TIs). In this letter, we choose to utilize NbP in magneto-transport experiments because its band structure is on assembly of a WSM and a normal semimetal. Such a combination in NbP indeed leads to the observation of remarkable transport properties, an extremely large magnetoresistance of 850,000 % at 1.85 K (250 % at room temperature) in a magnetic field of 9 T without any signs of saturation, and ultrahigh carrier mobility of 5$\times$10$^6$ cm$^2$ V$^{-1}$ s$^{-1}$ accompanied by strong Shubnikov-de Hass (SdH) oscillations. NbP presents a unique example to consequent design the functionality of materials by combining the topological and conventional phases., Comment: 18 pages, 4 figures, Nature Physics, online (2015)

We investigated the magnetic anisotropy ratio of thin sputtered polycrystalline MgB2 films on MgO substrates. Using high magnetic field measurements, we estimated an anisotropy ratio of 1.35 for T=0 K with an upper critical field of 31.74 T in the parallel case and 23.5 T in the perpendicular case. Direct measurements of a magnetic-field sweep at 4.2 K show a linear behavior, confirmed by a linear fit for magnetic fields perpendicular to the film plane. Furthermore, we observed a change of up to 12% of the anisotropy ratio in dependence of the film thickness., Comment: 4 pages, 4figures

Capacitance measurements provide a powerful means of probing the density of states. The technique has proved particularly successful in studying 2D electron systems, revealing a number of interesting many-body effects. Here, we use large-area high-quality graphene capacitors to study behavior of the density of states in this material in zero and high magnetic fields. Clear renormalization of the linear spectrum due to electron-electron interactions is observed in zero field. Quantizing fields lead to splitting of the spin- and valley-degenerate Landau levels into quartets separated by interaction-enhanced energy gaps. These many-body states exhibit negative compressibility but the compressibility returns to positive in ultrahigh B. The reentrant behavior is attributed to a competition between field-enhanced interactions and nascent fractional states.

We report on the unusual nature of nu=0 state in the integer quantum Hall effect (QHE) in graphene and show that electron transport in this regime is dominated by counter-propagating edge states. Such states, intrinsic to massless Dirac quasiparticles, manifest themselves in a large longitudinal resistivity rho_xx > h/e^2, in striking contrast to rho_xx behavior in the standard QHE. The nu=0 state in graphene is also predicted to exhibit pronounced fluctuations in rho_xy and rho_xx and a smeared zero Hall plateau in sigma_xy, in agreement with experiment. The existence of gapless edge states puts stringent constraints on possible theoretical models of the nu=0 state., Comment: 4 pgs, 4 fgs