90 results on '"Zerlauth, S."'
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2. Growth of partially strain-relaxed Si1-yCy epilayers on (100)Si
3. Reciprocal space mapping on Si1−x C x epilayers and Si n /C/Si n superlattices
4. Molecular beam-epitaxial growth and characterization of Zn(sub 1-x)Ca(sub x)S(sub y)Se(sub 1-y) alloys for blue-green laser applications
5. X-ray grazing incidence study of inhomogeneous strain relaxation in Si/SiGe wires
6. Metastability of Si 1− yC y epilayers under 2 MeV α-particle irradiation
7. Molecular-beam-epitaxial growth and characterization of Zn1-xCaxSySe1-y alloys for blue-green laser applications.
8. X-ray grazing-incidence study of inhomogeneous strain relaxation in Si/SiGe wires
9. Behaviour of metastable Si/sub 1 y/C/sub y/ epilayers under 2 MeV alpha particles irradiation
10. HRXRD and GID investigations of a self-organized SiGe quantum dot multilayer
11. Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high-resolution x-ray diffrcation and grazing-incidence diffraction
12. Behaviour of metastable si1-yCy epilayers under 2 MeV alpha particles irradiation
13. In-plane strain and strain relaxation in laterally patterned periodic arrays of protect (Si/SiGe) quantum wires and dot arrays
14. 12C(a,a)12C resonant elastic scattering at 5.72 MeV as a tool for carbon quantification in Silicon-based heterostructures
15. In-plane strain and strain relaxation in laterally patterned Si/SiGe quantum dots and wire arrays
16. MBE growth and structural characterization of Sic/SiGe superlattices
17. Local lattice distortion inSi1−x−yGexCyepitaxial layers from x-ray absorption fine structure
18. Vertical and lateral ordering in self-organized quantum dot superlattices
19. In-plane strain and shape analysis of Si/SiGe nanostructures by grazing incidence diffraction
20. Metastability of Si1−yCy epilayers under 2MeV α-particle irradiation
21. Lattice parameter ofSi1−x−yGexCyalloys
22. X-ray reflection from self-organized interfaces in an SiGe/Si multilayer
23. Diffuse x-ray reflectivity of strain-compensated Si/SiGe/SiC multilayers
24. Lateral arrangement of self-assembled quantum dots in an SiGe/Si superlattice
25. Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high-resolution x-ray diffraction and grazing incidence diffraction
26. Coplanar and grazing incidence x-ray-diffraction investigation of self-organized SiGe quantum dot multilayers
27. 12C(α,α)12C resonant elastic scattering at 5.7 MeV as a tool for carbon quantification in silicon-based heterostructures
28. In-plane strain and strain relaxation in laterally patterned periodic arrays of Si/SiGe quantum wires and dot arrays
29. Growth of partially strain-relaxed Si 1-y C y epilayers on (100)Si
30. Molecular beam epitaxial growth and photoluminescence investigation of Si1−yCy layers
31. Substitutional carbon incorporation into molecular beam epitaxy-grown Si[sub 1−y]C[sub y] layers
32. Lattice parameter in Si1−yCy epilayers: Deviation from Vegard’s rule
33. Growth conditions for complete substitutional carbon incorporation into Si1−yCy layers grown by molecular beam epitaxy
34. Influence of thermal annealing on the photoluminescence from pseudomorphic Si1−yCy epilayers on Si
35. Investigation of the roughness replication in multilayers by diffuse X-ray reflection
36. Molecular-beam-epitaxial growth and characterization of Zn1−xCaxSySe1−y alloys for blue-green laser applications
37. Electrical properties of Si1−xCx alloys and modulation doped Si/Si1−xCx/Si structures
38. Molecular beam epitaxy of pseudomorphic silicon/carbon superlattices on silicon substrates
39. p-Type Doping of ZnSe. On the Properties of Nitrogen in ZnSe:N
40. Phenomenon of bistability in luminescence
41. First realization of bistable light emitting devices
42. First Observation of Bistability in Luminescence
43. Reciprocal space mapping on SiC epilayers and Si/C/Si superlattices.
44. Substitutional carbon incorporation into molecular beam epitaxy-grown Si1-yCy layers.
45. Photoluminescence from pseudomorphic Si1-yCy layers on Si substrates.
46. Metastability of Si1-yCy epilayers under 2MeV a-particle irradiation
47. ^1^2C(a,a)^1^2C resonant elastic scattering at 5.7MeV as a tool for carbon quantification in silicon-based heterostructures
48. Molecular beam epitaxial growth and photoluminescence investigation of layers
49. MBE growth and structural characterization of Si1 − yCySi1 − xGexsuperlattices
50. Local lattice distortion in Si1-x-yGexCy epitaxial layers from x-ray absorption fine structure
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