316 results on '"Zetterling, Carl-Mikael"'
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2. Venus Long-life Surface Package
3. Wide Bandgap Integrated Circuits for High Power Management in Extreme Environments
4. Deposition of diamond films on single crystalline silicon carbide substrates
5. Wide Bandgap Integrated Circuits for High Power Management in Extreme Environments
6. Investigation of a Self-Aligned Cobalt Silicide Process for Ohmic Contacts to Silicon Carbide
7. High frequency characteristic of a monolithic 500 °C OpAmp-RC integrator in SiC bipolar IC technology
8. In Situ Gamma Irradiation Effects on 4H-SiC Bipolar Junction Transistors
9. A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier
10. Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide
11. Material aspects of wide temperature range amplifier design in SiC bipolar technologies
12. Integrated circuits in silicon carbide for high-temperature applications
13. Venus Calling Silicon Carbide Radio Circuits Can Take The Heat Needed To Phone Home From Our Hellish Sister Planet
14. Low-forward-voltage-drop 4H-SiC BJTs without base contact implantation
15. High-current-gain SiC BJTs with regrown extrinsic base and etched JTE
16. CVD-based tungsten carbide schottky contacts to 6H-SiC for very high-temperature operation
17. Fabrication and characterization of heterojunction diodes with HVPE-grown GaN on 4H-SiC
18. Ultrafast Pulsed I-V and Charge Pumping Interface Characterization of Low-Voltage n-Channel SiC MOSFETs
19. A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C
20. (Invited) Silicon Carbide Bipolar Power Devices
21. Silicon Carbide Bipolar Analog Circuits for Extreme Temperature Signal Conditioning
22. 555-Timer and Comparators Operational at 500 °C
23. SiC Bipolar Power Transistors - Design and Technology Issues for Ultimate Performance
24. Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs
25. 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters
26. High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor
27. A Monolithic 500°C D-Flip Flop Realized in Bipolar 4H-SiC TTL Technology
28. Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications
29. 500°C SiC-based driver IC for SiC power MOSFETs
30. High-Temperature Recessed Channel SiC CMOS Inverters and Ring Oscillators
31. Process Control and Optimization of 4H-SiC Semiconductor Devices and Circuits
32. 500 $^\circ$C SiC PWM Integrated Circuit
33. A 4H-SiC BJT as a Switch for On-Chip Integrated UV Photodiode
34. Growth of SiC Thin Films on (100) and (111) Silicon by Pulsed Laser Deposition Combined with a Vacuum Annealing Process
35. A Wafer-Scale Self-Aligned Ni-Silicide (SALICIDE) Low-Ohmic Contact Technology on n-type 4H-SiC
36. Electrical Characterization of Integrated 2-Input TTL NAND Gate at Elevated Temperature, Fabricated in Bipolar SiС-Technology
37. Low Temperature Ni-Al Ohmic Contacts to p-Type 4H-SiC Using Semi-Salicide Processing
38. 4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts
39. Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes
40. Low-Parasitic-Capacitance Self-Aligned 4H-SiC nMOSFETs for Harsh Environment Electronics
41. 500 °C, High Current Linear Voltage Regulator in 4H-SiC BJT Technology
42. A 600 °C TTL-based 11-stage Ring Oscillator in Bipolar Silicon Carbide Technology
43. 15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain
44. Scaling and Modeling of High Temperature 4H-SiC p-i-n Photodiodes
45. 500 °C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits
46. SiC BJT Compact DC Model With Continuous- Temperature Scalability From 300 to 773 K
47. UV–ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide
48. A Fully Integrated Silicon-Carbide Sigma–Delta Modulator Operating up to 500 °C
49. Scaling of 4H-SiC p-i-n photodiodes for high temperature applications
50. High Temperature Bipolar Master-Slave Comparator and Frequency Divider in 4H-SiC Technology
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