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Lateral heterostructures of 2D materials have several interesting properties and potential applications, and they are usually fabricated by chemical vapor deposition. However, it still remains a great challenge to fabricate 2D lateral heterostructures with well-controlled patterns and sharp interfaces. Herein, we found that the 2D α-Mo2C crystal, a recently emerging 2D superconductor, experiences a phase transition from the α phase to β phase on electron beam irradiation in a transmission electron microscope because of the migration of carbon atoms among the molybdenum octahedrons. Combined with first-principles calculations, the carbon atom migration paths and the corresponding energy barriers were discussed. Utilizing this unique phase transition property of 2D α-Mo2C crystal, we demonstrated the precise in situ construction of the lateral heterostructure of 2D superconducting α/β Mo2C with a well-controlled pattern and sharp interface using advanced aberration-corrected scanning transmission electron microscopy.

The ε-Ga2O3 p–n heterojunctions (HJ) have been demonstrated using typical p-type oxide semiconductors (NiO or SnO). The ε-Ga2O3 thin film was heteroepitaxial grown by metal organic chemical vapor deposition (MOCVD) with three-step growth method. The polycrystalline SnO and NiO thin films were deposited on the ε-Ga2O3 thin film by electron-beam evaporation and thermal oxidation, respectively. The valence band offsets (VBO) were determined by x-ray photoelectron spectroscopy (XPS) to be 2.17 eV at SnO/ε-Ga2O3 and 1.7 eV at NiO/ε-Ga2O3. Considering the bandgaps determined by ultraviolet-visible spectroscopy, the conduction band offsets (CBO) of 0.11 eV at SnO/ε-Ga2O3 and 0.44 eV at NiO/ε-Ga2O3 were obtained. The type-II band diagrams have been drawn for both p–n HJs. The results are useful to understand the electronic structures at the ε-Ga2O3 p–n HJ interface, and design optoelectronic devices based on ε-Ga2O3 with novel functionality and improved performance.

Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting of a planetary with seven 6-inch wafers for the planetary GaN-MOCVD. A numerical solution to the transient state at low pressure is obtained using computational fluid dynamics. To evaluate the role of the different zone speeds on the growth uniformity, single factor analysis is introduced. The results show that the growth rate and uniformity are strongly related to the rotational speed. Next, a response surface model was constructed by using the variables and the corresponding simulation results. The optimized combination of the matching of different speeds is also proposed as a useful reference for applications in industry, obtained by a response surface model and genetic algorithm with a balance between the growth rate and the growth uniformity. This method can save time, and the optimization can obtain the most uniform and highest thin film quality.

Lateral heterostructures of 2D materials have several interesting properties and potential applications, and they are usually fabricated by chemical vapor deposition. However, it still remains a great challenge to fabricate 2D lateral heterostructures with well-controlled patterns and sharp interfaces. Herein, we found that the 2D α-Mo

In In(Ga)P materials, Zn atoms diffuse into the adjacent Si doping layer at high temperatures, forming Zn–Si donor–acceptor pairs which function as non-radiation carrier recombination centers. The traps lead to decreased carrier diffusion length and separation efficiency in the space charge region of InGaP subcell, resulting in degradation of photoelectric conversion efficiency. In this paper, by adopting an InGaP p–i–n junction structure, the invert growth thin film cell was able to reach the same external quantum efficiency performance as the upright InGaP/GaAs dual-junction solar cell. The Zn doping peak was not observed at the Si doping interface layer in the electrochemical capacitance–voltage measurement. A 675 nm peak was observed at 5 and 30 K and absent in 77 K, as was resolved by low-temperature PL measurement. The peak showed a strong correlation with the Zn diffusion into adjacent Si doping InGaP layer. We speculate that the 675 nm peak represented the energy of Zn–Si donor–acceptor pair traps.

The Ca-doped Bi-2201 system with nominal composition Bi2Sr2−x Ca x CuO6+δ (x=0.1,0.3,0.5,0.7,0.9) was prepared by sol–gel method and investigated by X-ray diffraction, transmission electron microscopy and resistance measurements. It can be found that the Ca-doped Bi-2201 system was composed of Bi-2201 phase containing Ca (main phase) and a small quantity of Bi16(Sr,Ca)14O38 (impurity). For the main phase, the b ∗ component of the modulation wave vector decreases while the c ∗ component increases with the increase of calcium content. The evolutional mechanism of the modulation wave vector, the correlation between superconductivity and modulation wave vector were also discussed.

Monolayer circular graphene platelets with a grain structure gradient in the radial direction are synthesized by chemical vapor deposition on immiscible W-Cu substrates. Because of the different interactions and growth behaviors of graphene on Cu and tungsten carbide, such substrates cause the formation of grain size and orientation gradients through the competition between Cu and tungsten carbide in graphene growth.