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1. High Energy Irradiation Effects on Silicon Photonic Passive Devices

Author

Zhou, Yue, Bi, Dawei, Wang, Songlin, Wu, Longsheng, Huang, Yi, Zhang, Enxia, Fleetwood, Daniel M., and Wu, Aimin

Subjects
Physics - Optics, Physics - Applied Physics
Abstract

In this work, the radiation responses of silicon photonic passive devices built in silicon-on-insulator (SOI) technology are investigated through high energy neutron and 60Co gamma-ray irradiation. The wavelengths of both micro-ring resonators (MRRs) and Mach-Zehnder interferometers (MZIs) exhibit blue shifts after high-energy neutron irradiation to a fluence of 1*1012 n/cm2; the blue shift is smaller in MZI devices than in MRRs due to different waveguide widths. Devices with SiO2 upper cladding layer show strong tolerance to irradiation. Neutron irradiation leads to slight changes in the crystal symmetry in the Si cores of the optical devices and accelerated oxidization for devices without SiO2 cladding. A 2 um top cladding of SiO2 layer significantly improves the radiation tolerance of these passive photonic devices.

Published
2021
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6. Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Towards Radiation-Tolerant Embedded Nonvolatile Memory

Author

Jiang, Zhouhang, primary, Guo, Zixiang, primary, Luo, Xuyi, primary, sayed, munazza, primary, Faris, Zubair, primary, Mulaosmanovic, Halid, primary, duenkel, stefan, primary, soss, steven, primary, beyer, sven, primary, gong, xiao, primary, kurinec, santosh, primary, Narayanan, Vijaykrishnan, primary, Amrouch, Hussam, primary, zhang, enxia, primary, Fleetwood, Daniel M., primary, Schrimpf, Ronald D., primary, and Ni, Kai, primary

Published
2023
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8. Methodology for Correlating Historical Degradation Data to Radiation-Induced Degradation System Effects in Small Satellites

Author

Nederlander, Richard H., Witulski, Arthur F., Reed, Robert A., Zhang, Enxia, Schrimpf, Ronald D., Sierawski, Brian D., Karsai, Gabor, Mahadevan, Nag, Stassun, Keivan G., Ryder, Kaitlyn L., Austin, Rebekah A., Campola, Michael J., and Ladbury, Ray L.

Subjects
satellites, radiation degradation, bayesian analysis
Abstract

When constructing a system-level fault tree to demonstrate device-to-system level radiation degradation, reliability engineers need relevant, device-level failure probabilities to incorporate into reliability models. Deriving probabilities from testing can be expensive and time-consuming, especially if the system is complex. This methodology offers an alternative means of deriving device-level failure probabilities. It uses Bayesian analysis to establish links between historical radiation datasets and failure probabilities. A demonstration system for this methodology is provided, which is a TID response of a linear voltage regulator at 100 krad(SiO2). Data fed into the Bayesian model is derived from literature on the components found within a linear voltage regulator. An example is presented with data pertaining to the device’s bipolar junction transistor (BJT)’s gain degradation factor (GDF). Kernel density estimation is used to provide insight into the dataset’s general distribution shape. This guides the engineer into picking the appropriate distribution for device-level Bayesian analysis. Failure probabilities generated from the Bayesian analysis are incorporated into a LTspice model to derive a system failure probability (using Monte Carlo) of the regulator’s output. In our demonstration system, a 96.5% likelihood of system degradation was found in the assumed environment.

Published
2022

9. Combined Effect of TID Radiation and Electrical Stress on NMOSFETs

Author

Cao, Yanrong, primary, Wang, Min, additional, Zheng, Xuefeng, additional, Zhang, Enxia, additional, Lv, Ling, additional, Wang, Liang, additional, Ma, Maodan, additional, Lv, Hanghang, additional, Wang, Zhiheng, additional, Wang, Yongkun, additional, Tian, Wenchao, additional, Ma, Xiaohua, additional, and Hao, Yue, additional

Published
2022
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15. Comments by the Editors

Author

Fleetwood, Dan, Quinn, Heather, Moss, Steven, Goiffon, Vincent, Paillet, Philippe, Ding, Lili, Loveless, Daniel, Black, Jeffrey, Faccio, Federico, Barth, Janet, Meng, Cui, and Zhang, Enxia

Abstract

The August 2024 special issue of the IEEE Transactions on Nuclear Science (TNS) contains more than 60 peer-reviewed journal articles prepared on the basis of presentations made at the 2023 Conference on Radiation and Its Effects on Components and Systems (RADECS), held in Toulouse, France, September 25–29, 2023. Additional papers presented at RADECS 2023 are available in the conference proceedings, available through IEEE Xplore.

Published
2024
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22. Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments

Author

Johnson, Robert A., primary, Witulski, Arthur F., additional, Ball, Dennis R., additional, Galloway, Kenneth F., additional, Sternberg, Andrew L., additional, Zhang, Enxia, additional, Ryder, Landen D., additional, Reed, Robert A., additional, Schrimpf, Ronald D., additional, Kozub, John A., additional, Lauenstein, Jean-Marie, additional, and Javanainen, Arto, additional

Published
2019
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23. Toxicological exploration of peptide-based cationic liposomes in siRNA delivery

Author

Zhu, Yanyan, primary, Meng, Yao, additional, Zhao, Yinan, additional, Zhu, Jie, additional, Xu, Hong, additional, Zhang, Enxia, additional, Shi, Lei, additional, Du, Linying, additional, Liu, Guoliang, additional, Zhang, Chuanmin, additional, Xu, Xiaodong, additional, Kang, Xiaohui, additional, Zhen, Yuhong, additional, and Zhang, Shubiao, additional

Published
2019
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28. SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients

Author

Fleetwood, Zachary E., primary, Ildefonso, Adrian, additional, Tzintzarov, George N., additional, Wier, Brian, additional, Raghunathan, Uppili, additional, Cho, Moon-Kyu, additional, Song, Ickhyun, additional, Wachter, Mason T., additional, Nergui, Delgermaa, additional, Khachatrian, Ani, additional, Warner, Jeffrey H., additional, McMarr, Patrick, additional, Hughes, Harold, additional, Zhang, Enxia, additional, McMorrow, Dale, additional, Paki, Pauline, additional, Joseph, Alvin, additional, Jain, Vibhor, additional, and Cressler, John D., additional

Published
2018
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30. Total-Ionizing-Dose Response of MoS2 Transistors With ZrO2 and h-BN Gate Dielectrics.

Author

Wang, Pan, Kalita, Hirokjyoti, Krishnaprasad, Adithi, Dev, Durjoy, O'Hara, Andrew, Jiang, Rong, Zhang, Enxia, Fleetwood, Daniel M., Schrimpf, Ronald D., Pantelides, Sokrates T., and Roy, Tania

Subjects
TRANSISTORS, DIELECTRICS, DIELECTRIC devices, DENSITY functional theory, FIELD-effect transistors, THRESHOLD voltage
Abstract

The total-ionizing-dose response of few layer MoS2 transistors with ZrO2 or h-BN gate dielectrics is investigated under various bias conditions. Defects in MoS2 and surrounding dielectric layers significantly affect radiation-induced trapping. For devices with ZrO2 dielectrics, much larger negative Vth shifts and peak transconductance degradation are observed for irradiation under negative and ground bias than under positive bias. The h-BN devices exhibit positive threshold voltage shifts under negative-bias irradiation. For both ZrO2 and h-BN passivated devices, the peak transconductance degradation results from charge trapping at the surface of the MoS2 or in nearby oxides. Changes in defect energy distributions of MoS2 FETs during X-ray irradiation are characterized via temperature-dependent low-frequency noise measurements. Density functional theory calculations are performed to provide insight into the pertinent defects. [ABSTRACT FROM AUTHOR]

Published
2019
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35. Interface and Border Traps in Ge pMOSFETs

Author

Fleetwood, Dan, primary, Simoen, Eddy, additional, Francis, Sarah, additional, Zhang, Xuan, additional, Arora, Rajan, additional, Zhang, Enxia, additional, Schrimpf, Ron, additional, Galloway, Ken, additional, Mitard, Jerome, additional, and Claeys, C., additional

Published
2012
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37. SET Characterization in Logic Circuits Fabricated in a 3DIC Technology

Author

Gouker, Pascale M., primary, Tyrrell, Brian, additional, Renzi, Matthew, additional, Chen, Chenson, additional, Wyatt, Peter, additional, Ahlbin, Jonathan R., additional, Weeden-Wright, Stephanie, additional, Atkinson, Nick M., additional, Gaspard, Nelson J., additional, Bhuva, Bharat L., additional, Massengill, Lloyd W., additional, Zhang, Enxia, additional, Schrimpf, R., additional, Weller, Robert A., additional, King, Michael P., additional, and Gadlage, Matthew J., additional

Published
2011
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42. Effects of halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs

Author

Arora, Rajan, primary, Mitard, Jerome, additional, Madan, Anuj, additional, Simoen, Eddy, additional, Zhang, Enxia X., additional, Fleetwood, Daniel M., additional, Choi, Bo K., additional, Schrimpf, Ronald D., additional, Galloway, Kenneth F., additional, Kulkarni, Shrinivas R., additional, Meuris, Marc, additional, Claeys, Cor, additional, and Cressler, John D., additional

Published
2009
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43. Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers

Author

Liu Zhongli, Zheng Zhong-Shan, Zhang Enxia, Li Guo-Hua, and Li Ning

Subjects
Materials science, business.industry, Annealing (metallurgy), chemistry.chemical_element, Silicon on insulator, Charge density, Condensed Matter Physics, Nitrogen, Oxygen, Buried oxide, Electronic, Optical and Magnetic Materials, chemistry, Materials Chemistry, Electronic engineering, Optoelectronics, Wafer, Irradiation, Electrical and Electronic Engineering, business
Abstract

To harden silicon-on-insulator (SOI) wafers fabricated using separation by implanted oxygen (SIMOX) to total-dose irradiation, the technique of nitrogen implantation into the buried oxide (BOX) layer of SIMOX wafers can be used. However, in this work, it has been found that all the nitrogen-implanted BOX layers reveal greater initial positive charge densities, which increased with increasing nitrogen implantation dose. Also, the results indicate that excessively large nitrogen implantation dose reduced the radiation tolerance of BOX for its high initial positive charge density. The bigger initial positive charge densities can be ascribed to the accumulation of implanted nitrogen near the Si-BOX interface after annealing. On the other hand, in our work, it has also been observed that, unlike nitrogen-implanted BOX, all the fluorine-implanted BOX layers show a negative charge density. To obtain the initial charge densities of the BOX layers, the tested samples were fabricated with a metal-BOX-silicon (MBS) structure based on SIMOX wafers for high-frequency capacitance–voltage (C–V) analysis.

Published
2010

49. Fin Width and Gate Length Dependences of Charge Pumping and DCIV Currents in Floating-Body SOI MOSFETs

Author

Zhang, Enxia, Fleetwood, Dan M, Xing, Guo, Schrimpf, Ron D., Simoen, Eddy, and Linten, Dmitri

Abstract

We have evaluated the effects of device geometry and frequency on DCIV and ACIV (charge pumping) currents in development-stage SOI finFETs with floating bodies that are built in two process technologies. Both the DCIV and ACIV currents are much smaller in devices for which the gate length exceeds ~100 nm or the fin width exceeds ~70 nm. ACIV currents are approximately linear with frequency up to ~300 kHz for the devices and measurement conditions used in this study. ACIV estimates of effective interface-trap densities for relatively short-channel, narrow-fin devices in each technology are ~4 x 1011 cm-2.

Published
2013

50. (Invited) Interface and Border Traps in Ge pMOSFETs

Author

Fleetwood, Dan M, Simoen, Eddy, Francis, Sarah A., Arora, Rajan, Zhang, Enxia, Schrimpf, Ron D., Galloway, Ken F., and Mitard, Jerome

Abstract

We have evaluated the effects of device processing and total-ionizing-dose (TID) radiation exposure on interface and border traps in Ge pMOSFETs. The defect density of these devices before and after TID irradiation is particularly sensitive to the number of Si monolayers at the substrate-to-dielectric interface and the halo doping conditions. These differences are reflected in the on-to-off current ratios, oxide- and interface-trap charge densities, and low-frequency noise exhibited by the devices. Lower halo implant doses are preferred over higher doses. An increase in the number of Si monolayers from five to eight improves the on-to-off current ratios and radiation response. The best overall performance in a radiation environment is observed for a process with eight Si overlayers and relatively low halo implant dose.

Published
2013

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