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Since synchrotron polarization fluctuations are related to the fundamental properties of the magnetic field, we propose the polarization intensity variance to measure the Galactic interstellar medium (ISM) magnetization. We confirm the method's applicability by comparing it with the polarization angle dispersion and its reliability by measuring the underlying Alfvénic Mach number of magnetohydrodynamic turbulence. With the finding of the power-law relation of A ∝ M A 2 between polarization intensity variance A and Alfvénic Mach number M A, we apply the new technique to the Canadian Galactic Plane Survey data, achieving the Alfvénic Mach number of the Galactic ISM. Our results show that the low-latitude Galactic ISM is dominated by sub-Alfénic turbulence, with M A approximately between 0.5 and 1.0. [ABSTRACT FROM AUTHOR]

This paper employs an MHD-PIC method to perform numerical simulations of magnetic-reconnection-driven turbulence and turbulent reconnection acceleration of particles. Focusing on the dynamics of the magnetic reconnection, the properties of self-driven turbulence, and the behavior of particle acceleration, we find the following: (1) When reaching a statistically steady state of the self-driven turbulence, the magnetic energy is almost released by 50%, while the kinetic energy of the fluid increases by no more than 15%. (2) The properties of reconnection-driven turbulence are more complex than the traditional turbulence driven by an external force. (3) The strong magnetic field tends to enhance the turbulent reconnection efficiency to accelerate particles more efficiently, resulting in a hard spectral energy distribution. Our study provides a particular perspective on understanding turbulence properties and turbulent-reconnection-accelerated particles. [ABSTRACT FROM AUTHOR]

Considering the spatially separated polarization radiation and Faraday rotation regions to simulate complex interstellar media, we study synchrotron polarization gradient techniques' measurement capabilities. We explore how to trace the direction of projected magnetic field of emitting-source region at the multifrequency bands, using the gradient technique compared with the traditional polarization vector method. Furthermore, we study how Faraday rotation density in the foreground region, i.e. a product of electron number density and parallel component of magnetic fields along the line of sight, affects the measurement of projected magnetic field. Numerical results show that synchrotron polarization gradient technique could successfully trace projected magnetic field within emitting-source region independent of radio frequency. Accordingly, the gradient technique can measure the magnetic field properties for a complex astrophysical environment. [ABSTRACT FROM AUTHOR]

Based on high-resolution 3D data cubes from a magnetohydrodynamic (MHD) turbulence simulation, we study how to reveal the direction of the magnetic field within the optically thick interstellar medium by using the velocity gradient technique (VGT), correlation function anisotropy (CFA), and principal component analysis of anisotropies (PCAA). Considering the CO molecular tracers as a tracing method for radiative transfer processes, we find that the VGT and CFA can successfully trace the orientation of mean magnetic fields, which is in good agreement with the low-resolution numerical results obtained in the case of an optically thin medium. Similar to the simulation of an optically thin ISM, our simulations show that PCCA is still unusable in optically thick media. The synergetic application of the VGT and CFA to high-resolution spectroscopic observations is expected to yield valuable information on the interstellar magnetic field. [ABSTRACT FROM AUTHOR]

Due to the inevitable accumulation of observational information in the direction of the line of sight, it is difficult to measure the local magnetic field of magnetohydrodynamic (MHD) turbulence. However, a correct understanding of the local magnetic field is a prerequisite for reconstructing the Galactic 3D magnetic field. We study how to reveal the local magnetic field direction and the eddy anisotropy on the basis of the statistics of synchrotron polarization derivative with respect to the squared wavelength dP/dλ2. In the low-frequency and strong Faraday rotation regime, we implement numerical simulations in the combination of multiple statistic techniques, such as structure function, quadrupole ratio modulus, spectral correlation function, correlation function anisotropy, and spatial gradient techniques. We find that (1) statistic analysis of dP/dλ2 indeed reveals the anisotropy of underlying MHD turbulence, the degree of which increases with the increase of the radiation frequency; and (2) the synergy of both correlation function anisotropy and gradient calculation of dP/dλ2 enables the measurement of the local magnetic field direction. [ABSTRACT FROM AUTHOR]

This paper studies how to employ synchrotron emission gradient techniques to reveal the properties of the magnetic field within the interstellar media. Based on data cubes of three-dimensional numerical simulations of magnetohydrodynamic turbulence, we explore spatial gradients of synchrotron emission diagnostics to trace the direction of the magnetic field. According to our simulations, multifarious diagnostics for synchrotron emission can effectively determine the potential direction of projected magnetic fields. Applying the synergies of synchrotron diagnostic gradients to the archive data from the Canadian Galactic Plane Survey, we find that multifarious diagnostic techniques make consistent predictions for the Galactic magnetic field directions. With the high-resolution data presently available from Low Frequency Array for radio astronomy and those in the future from the Square Kilometer Array, the synergies of synchrotron emission gradients are supposed to perform better in tracing the actual direction of interstellar magnetic fields, especially in the low-frequency Faraday rotation regime where the traditional synchrotron polarization measure fails. [ABSTRACT FROM AUTHOR]

Silicon bandgap limits the reduction of operation voltage when downscaling device sizes. This increases the electrical field within-a-device and hot carrier aging (HCA) is becoming an important reliability issue again for some CMOS technologies. For nanodevices, there are a number of challenges for characterizing their HCA: the random charge–discharge of traps in gate dielectric causes “within-a-device-fluctuation (WDF),” making the parameter shift uncertain after a given HCA. This can introduce errors when extracting HCA time exponents and it will be shown that the lower envelope of the WDF must be used. Nanodevices also have substantial device-to-device variation (DDV) and multiple tests are needed for evaluating their standard deviation ( $\sigma )$ and mean value ( $\mu $ ). Repeating the time-consuming HCA tests is costly and a voltage-step-stress method is applied to reduce the number of tests by 80%. For a given number of devices under tests (DUTs), there is a little information on the accuracy of the extracted $\sigma $ and $\mu $ . We will develop a method to provide this information, based on the defect-centric model. For 40 DUTs with an average of ten traps per device, the extracted $\mu $ and $\sigma $ has an accuracy of ±14% and ±24%, respectively, with a 95% confidence. [ABSTRACT FROM PUBLISHER]

Prostate Cancer has become the second leading cause of male cancer-related incidence and mortality in United States. Hyperthermia (HT) is known to serve as a powerful tool in treatment of prostate cancer in clinical. The combination treatment with HT and cisplatin has a synergistic effect to inhibit prostate cancer progression and demonstrates better clinical effectiveness than HT or chemotherapy alone. But molecular mechanisms of this phenomenon have not been illuminated clearly. In this study, we used MTS assay to examine cell viabilities of PC-3, LNCaP, DU-145 and RM-1 cells after treated by HT and cisplatin. Then colony formation of PC-3 and DU-145 cells after treated with HT and cisplatin were photographed. To investigate whether the combination therapy would enhance apoptosis of PC-3 and DU-145 cells, we used Western blot analysis to detect expression level of proteins on apoptosis-regulated signaling pathway in PC-3 and DU-145 cells. Our results showed that the combination treatment decreased cell viabilities and colony formation of prostate cancer cells in a dose-dependent manner and this combination therapy enhanced apoptosis of PC-3 and DU-145 cells via activation of Caspase-3 and cleavage of PARP. We also found that the combination therapy could down-regulate the anti-apoptotic Bcl-2 and IAP family proteins. At last, the combination therapy activated AMPKα-JNK signaling pathway and inhibited Akt-mTOR-p70s6k signaling pathway to promote apoptosis of PC-3 and DU-145 cells. In conclusion, this study clearly elucidated how the combination therapy with HT and cisplatin promoted apoptosis of prostate cancer cells in synergy. [ABSTRACT FROM AUTHOR]

The access transistor of SRAM can suffer both positive bias temperature instability (PBTI) and hot carrier aging (HCA) during operation. The understanding of electron traps (ETs) is still incomplete and there is little information on their similarity and differences under these two stress modes. The key objective of this paper is to investigate ETs in terms of energy distribution, charging and discharging properties, and generation. We found that both PBTI and HCA can charge ETs which center at 1.4 eV below conduction band ( Ec ) of high-k dielectric, agreeing with theoretical calculation. For the first time, clear evidences are presented that HCA generates new ETs, which do not exist when stressed by PBTI. When charged, the generated ETs’ peak is 0.2 eV deeper than that of preexisting ETs. In contrast with the power law kinetics for charging the preexisting ETs, filling the generated ETs saturates in seconds, even under an operation bias of 0.9 V. ET generation shortens device lifetime and must be included in modeling HCA. A cyclic and antineutralization ETs model is proposed to explain PBTI and HCA degradation, which consists of preexisting cyclic ETs, generated cyclic ETs, and antineutralization ETs. [ABSTRACT FROM AUTHOR]

SRAM is vulnerable to device-to-device variation (DDV), since it uses minimum-sized devices and requires device matching. In addition to the as-fabricated DDV at time-zero, aging induces a time-dependent DDV (TDDV). Bias temperature instability (BTI) is a dominant aging process. A number of techniques have been developed to characterize the BTI, including the conventional pulse- \(I\) – \(V\) , random telegraph noises, time-dependent defect spectroscopy, and TDDV accounting for the within-device fluctuation. These techniques, however, cannot be directly applied to SRAM, because their test conditions do not comply with typical SRAM operation. The central objective of this paper is to develop a technique suitable for characterizing both the negative BTI (NBTI) and positive BTI (PBTI) in SRAM. The key issues addressed include the SRAM relevant sensing Vg, measurement delay, capturing the upper envelope of degradation, sampling rate, and measurement time window. The differences between NBTI and PBTI are highlighted. The impact of NBTI and PBTI on the cell-level performance is assessed by simulation, based on experimental results obtained from individual devices. The simulation results show that, for a given static noise margin, test conditions have a significant effect on the minimum operation bias. [ABSTRACT FROM PUBLISHER]

Ge is a candidate for replacing Si, especially for pMOSFETs, because of its high hole mobility. For Si-pMOSFETs, negative-bias temperature instabilities (NBTI) limit their lifetime. There is little information available for the NBTI of Ge-pMOSFETs with Ge/GeO2/Al2O3 stack. The objective of this paper is to provide this information and compare the NBTI of Ge- and Si-pMOSFETs. New findings include: 1) the time exponent varies with stress biases/field when measured by either the conventional slow dc or pulse I-V technique, making the conventional Vg -accelerated method for predicting the lifetime of Si-pMOSFETs inapplicable to Ge-pMOSFETs used in this paper; 2) the NBTI is dominated by positive charges (PCs) in dielectric, rather than generated interface states; 3) the PC in Ge/GeO2/Al2O3 can be fully annealed at 150 ^\circC ; and 4) the defect losses reported for Si sample were not observed. For the first time, we report that the PCs in oxides on Ge and Si behave differently, and to explain the difference, an energy-switching model is proposed for hole traps in Ge-MOSEFTs: their energy levels have a spread below the edge of valence band, i.e., Ev , when neutral, lift well above Ev after charging, and return below Ev following neutralization. [ABSTRACT FROM PUBLISHER]

Defects in gate oxide cause breakdown and shorten device lifetime. Early works mainly focused on generation process that converts a precursor into a charged defect. Although it can be neutralized through “recovery,” the defect is still there and will recharge when resuming stress. Recently, we have shown that this is not always the case and some defects can be lost, but a detailed investigation is missing. The central objective of this work is to accurately define and extract the loss, separate it from slowdown, and evaluate their enhancement of device lifetime. Loss is defined as elimination of defects, while slowdown means that recharging a “hardened” precursor takes longer than charging a fresh one. Clear evidences show that losses originate from permanent components, i.e., generated interface states and antineutralization positive charges, while slowdown occurs to both permanent and recoverable components. Loss is thermally accelerated, but slowdown of recoverable component is not. This improved understanding adds slowdown and losses to the existing framework for defects. For the first time, we report that the losses and slowdown enhance device lifetime by a factor of 2.6–4.3, for an allowed threshold voltage shift of 20–45 mV. [ABSTRACT FROM AUTHOR]

Interface states play an important role in the performance of MOSFETs, and previous works only addressed the states within band gap. The implicit assumption is that the states beyond band gap (SBBs) are negligible, but there is no experimental evidence supporting it. Because of a lack of techniques for characterizing SBBs, there is hardly any information available. The central objective of this paper is to develop a technique for evaluating SBBs and to show the impact of SBBs on mobility evaluation. For the first time, the pulse capacitance–voltage has been used to extract SBBs quantitatively. It is found that SBBs can reach the order of \10^13 \ \cm^-2\cdot\eV^-1 beyond both conduction- and valence-band edges on a fresh MOSFET. The conventional split C– V technique ignores the SBBs, and this can lead to an underestimation of carrier mobility over 30%. Using the newly developed technique as a tool, the impact of nitridation of Hf-based dielectric stacks on carrier mobility is assessed. As nitrogen density increases, the apparent reduction of carrier mobility observed by early works originates from the higher SBBs. Once SBBs are taken into account, nitridation does not degrade carrier mobility. The SBBs are sensitive to process conditions, and this paper opens the way for their minimization. [ABSTRACT FROM AUTHOR]

Abstract: An efficient evaluation index system and evaluation method for enterprise informatization is critically important for guiding the implementation and development tasks of enterprise information systems. This paper, based on pre-research for a group of typical enterprises and item, factor and reliability analysis of acquired samples, presents a comprehensive evaluation index system which includes three key first-level indicator sets (consisting of the current status of enterprise informatization, the production management characteristics and the system functional requirements), 16 second-level indicators and 80 third-level indicators. According to the characteristics of the designed objectives in the evaluation index system, we propose to use the grey relative correlation analysis method to evaluate the influencing factors of the enterprise informatization, employ the grey comprehensive correlation analysis method to determine the production management characteristics of the enterprise and adopt the grey clustering assessment technology to assess the information system functional requirements based on Grey System Theory. Moreover, case studies for enterprise informatization that mainly focus on the process enterprises in southwest China were illustrated. The research results show that the proposed evaluation system and evaluation method is reliable, practical, and able to better reflect the level of enterprise information and demand characteristics. [Copyright &y& Elsevier]

A rat model of gastric ischemia–reperfusion injury (GI-RI) was established by clamping the celiac artery for 30 min and allowing reperfusion for 1 h, on which the regulatory effect of the paraventricular nucleus (PVN) and its neural mechanisms were investigated. The results were: 1. Electrical stimulation of the PVN obviously attenuated the GI-RI. Microinjection of L-glutamic acid into PVN produced an effect similar to that of PVN stimulation. 2. Electrolytic ablation of the PVN aggravated the GI-RI. 3. Nucleus tractus solitarius (NTS) ablation could eliminate the protective effect of electrical stimulation of PVN on GI-RI. 4. Hypophysectomy did not alter the effect of electrical stimulation of PVN. 5. Vagotomy or sympathectomy both could increase the effect of PVN stimulation on GI-RI. These results indicate that the PVN participates in the development of GI-RI as a specific area in the CNS, exerting protective effects on the GI-RI. The NTS and vagus and sympathetic nerve may be involved in the regulative mechanism of PVN on GI-RI, but the PVN mechanism here is independent of the PVN-hypophyseal pathway. [Copyright &y& Elsevier]

The future security of Internet of Things is a key concern in the cyber-security field. One of the key issues is the ability to generate random numbers with strict power and area constrains. "True Random Number Generators" have been presented as a potential solution to this problem but improvements in output bit rate, power consumption, and design complexity must be made. In this work we present a novel and experimentally verified "True Random Number Generator" that uses exclusively conventional CMOS technology as well as offering key improvements over previous designs in complexity, output bitrate, and power consumption. It uses the inherent randomness of telegraph noise in the channel current of a single CMOS transistor as an entropy source. For the first time multi-level and abnormal telegraph noise can be utilised, which greatly reduces device selectivity and offers much greater bitrates. The design is verified using a breadboard and FPGA proof of concept circuit and passes all 15 of the NIST randomness tests without any need for post-processing of the generated bitstream. The design also shows resilience against machine learning attacks performed by the LSTM neural network. [ABSTRACT FROM AUTHOR]

We analysed an XMM–Newton plus a simultaneous Rossi X-ray Timing Explorer observation and a separate Suzaku observation of the neutron star low-mass X-ray binary 4U 1728–34. We fitted the X-ray spectra with the self-consistent reflection model relxill. We found that the inclination angle of 4U 1728–34 is 49 ± 5 degree, consistent with the upper limit of 60 degree deduced from the absence of eclipses or dips in this source. The inclination angle in the fit of the XMM–Newton /RXTE observation is larger than 85 degree, which may be due to the possible calibration issues of the PN instrument in timing mode. We also found that the thermal emission from the accretion disc is not significant. This could be explained either by the relatively high column density of the interstellar medium along the line of sight to the source, which decreases the number of soft disc photons, or if most of the soft thermal photons from the disc are reprocessed in the corona. The ionization parameter derived from the fits is larger than the value predicted in the framework of the standard reflection model, wherein the disc is irradiated by an X-ray source above the compact object. This inconsistency suggests that irradiation from the neutron star and its boundary layer may play an important role in the ionization of the accretion disc, and hence in the reflection component in this source. [ABSTRACT FROM AUTHOR]

Low-power circuits are important for many applications, such as Internet of Things. Device variations and fluctuations are challenging their design. Random telegraph noise (RTN) is an important source of fluctuation. To verify a design by simulation, one needs assessing the impact of fluctuation in both driving current $\Delta {I}_{d}$ and threshold voltage $\Delta {V}_{\textsf {th}}$. Many early works, however, only measured RTN-induced $\Delta {I}_{d}$. $\Delta {V}_{\textsf {th}}$ was not directly measured because of two difficulties: its average value is low and it is highly dynamic. Early works often estimated $\Delta {V}_{\textsf {th}}$ from $\Delta {I}_{d}/{g}_{m}$ (${V}_{g} = {V}_{\textit {dd}}$), where ${g}_{m}$ is the transconductance, without giving its accuracy. The objective of this paper is to develop a new Trigger-When-Charged (TWC) technique for directly measuring the RTN-induced $\Delta {V}_{\textsf {th}}$. By triggering the measurement only when a trap is charged, measurement accuracy is substantially improved. It is found that there is a poor correlation between $\Delta {I}_{d}/{g}_{m}$ (${V}_{g} = {V}_{\textit {dd}}$) and the directly measured $\Delta {V}_{\textsf {th}}$ (${V}_{g} = {V}_{\textsf {th}}$). The former is twice of the latter on average. The origin for this difference is analyzed. For the first time, the TWC is applied to evaluate device-to-device variations of the directly measured RTN-induced $\Delta {V}_{\textsf {th}}$ without selecting devices. [ABSTRACT FROM AUTHOR]

Positive bias temperature instability (PBTI) is poised to cause significant degradation to nFETs with deep scaling into nanometers. It is commonly modeled by a power law fitted with measured threshold voltage shift. For the first time, this paper shows that such models do not warrant PBTI prediction outside the stress conditions used for the fitting. The underlying cause for this failure is the errors in the extracted power exponent. Based on the understanding of different types of defects, we develop a robust as-grown-generation model and demonstrate its capability for accurate prediction of PBTI under both dc and ac conditions. The generation-induced degradation is found to play a key role. Analysis reveals that although PBTI is usually smaller than negative BTI (NBTI) within the typical test time window, it can exceed NBTI by the end of device lifetime. [ABSTRACT FROM AUTHOR]

In order to understand the main observational characteristics of the Galactic X-ray binary Cygnus X-3, we propose a radiation model in which high-energy electrons accelerate in the dissipation zone of a jet and produce nonthermal broadband emissions. Broadband spectral energy distributions are computed to compare the AGILE and Fermi LAT data with the multi-band data during soft X-ray spectral states. By fitting observations at different locations of the jet, we find that the emission region is rather compact and should be located at a distance of about one orbital radius. Our results can explain the current multi-frequency observations and also predict the TeV band emission. The model could be tested by a polarization measurement at IR band, and/or by a correlation study between the GeV and TeV bands once very-high-energy observations are available. [ABSTRACT FROM AUTHOR]

The high mobility germanium (Ge) channel is considered as a strong candidate for replacing Si in pMOSFETs in the near future. It has been reported that the conventional power-law degradation kinetics of Si devices is inapplicable to Ge. In this paper, further investigation is carried out on defect energy distribution, which clearly shows that this is because the defects in GeO2/Ge and SiON/Si devices have different physical properties. The three main differences are: 1) energy alternating defects (EAD) exist in Ge devices but are insignificant in Si; 2) the distribution of as-grown hole traps has a tail in the Ge bandgap but not in Si, which plays an important role in the degradation kinetics and device lifetime prediction; and 3) EAD generation in Ge devices requires the injected charge carriers to overcome a second energy barrier, but not in Si. Taking the above differences into account, the power-law kinetics of EAD generation can be successfully restored by following a new procedure, which can assist in the Ge process/device optimization. [ABSTRACT FROM PUBLISHER]

A total rice category of infection rate was conducted based on 528 varieties, including different rice types of I indica i , I japonica i , hybrid I indica i , hybrid I japonica i , restorer line, sterile line and maintainer line that were infected by SRBSDV, RBSDV and RGDV, respectively (Supplementary Fig. (B) The infection rate of 528 rice varieties upon RBSDV and RGDV infection under natural conditions. (A) The infection rate of hybrid rice, indica type and japonica type upon SRBSDV infection under greenhouse and natural conditions. [Extracted from the article]

Abstract: We investigated the protective effects of chemical stimulation of cerebellar interpositus nucleus (IN) on gastric ischemia-reperfusion injury (GI-RI) and its possible regulatory mechanisms in rats. Gastric mucosal damage index (GMDI) indicated the severity of gastric mucosal injuries. Transferase dUTP nick end labeling (TUNEL) staining and proliferating cell nuclear antigen (PCNA) were performed to assess gastric mucosal cell apoptosis and proliferation. Microinjection of glutamate into IN markedly attenuated GI-RI. Either chemical lesion of IN or electrical ablation of the decussation of superior cerebellar peduncle (DSCP) obviously aggravated GI-RI. The protective effects of IN were reversed with the pretreatments of microinjection of 3-mercaptopropionic acid into IN or Bicuculline into lateral hypothalamic area (LHA), individually. The discharge frequency and intensity of greater splanchnic nerve (GSN) decreased and gastric mucosal blood flow increased after chemical stimulation of IN. The apoptosis of positive cells of gastric mucosa was decreased by chemical stimulation of IN, whereas proliferation increased. The gastric juice volume, acidity, and total acid output were all decreased after the chemical stimulation of IN. These results indicated that IN participates in regulation of GI-RI and is a specific area in central nervous system for exerting protective effects on GI-RI. DSCP, LHA and GSN may involve in this process. Apoptosis and proliferation may mediate this protective process in rats too. [Copyright &y& Elsevier]

\Al2\O3 high- \kappa stack is a strong candidate as the dielectric layer in Flash memory cells for technology generations beyond sub-20 nm. In this paper, the cause of abnormal VTH/VFB shift at low operating electric fields is investigated, i.e., VTH/VFB reduces at low positive gate biases and increases at low negative gate biases. It is found that this instability does not originate from the electrons trapping/detrapping from the gate nor from the dielectric relaxation. For the first time, extensive experimental evidences show that this shift is caused by as-grown mobile charges in \Al2\O3 layers generated by postdeposition annealing at 1000 ^\circ\C or above. Its impacts on program/erase windows and read/pass disturbance in Flash memory cells are also evaluated. [ABSTRACT FROM PUBLISHER]

Abstract: Cerebellum, primarily believed as a subcortical somatic motor center, is increasingly considered to be implicated in visceral activities. However, little is known about its regulation on gastrointestinal organs. In this research, we investigated the aggravated effect of microinjection of gamma-aminobutyric acid receptor subtype B (GABABR) agonist, Baclofen into cerebellar fastigial nucleus (FN) on stress gastric mucosal damage (SGMD) and its possible regulatory mechanism. The gastric mucosal damage index was chosen to indicate the severity of gastric mucosal injure. Immunohistochemistry and transferase-mediated dUTP-biotin nick-endlabeling (TUNEL) methods were used to detect the variations of lateral hypothalamic area (LHA) and gastric mucosa. It had been demonstrated that FN participates in regulation of SGMD via its GABABR and GABA neural pathway, which passes through the decussation of superior cerebellar peduncle and projects to the GABA receptors in LHA. Meanwhile, celiac sympathetic nerve involves in this process via mediating neural discharge, which results in the decrease of gastric mucosal blood flow. Additionally, apoptosis, proliferation and oxidation in gastric mucosa, and gastric acid contribute in the mechanism. It could be expected that these results might suggest insights to the cerebellar and hypothalamic function, and the treatment of gastrointestinal diseases. [Copyright &y& Elsevier]

Characterizing interface states is a key task, and it typically takes seconds when conventional techniques, such as charge pumping (CP), are used. The stress-induced degradation can recover substantially during this time, and there is a need to improve the measurement speed. The central task of this work is to reduce the measurement time for interface states from seconds to microseconds to minimize the recovery. A fast single pulse CP (SPCP) technique is developed. By exploring the differences in the transient currents corresponding to the two edges of the gate pulse, the net charges pumped into devices can be obtained, and their saturation level is used to evaluate interface states. Unlike the conventional CP (CCP) method, the contribution of currents during the plateaus of gate pulse is excluded for SPCP, making it less vulnerable to the interferences of gate leakage and defects within dielectrics. For the first time, the SPCP allows the recovery of interface states being monitored with a time resolution in microseconds. The results show that the recovery of stress-induced interface states is substantial within 100 \mu\s, which would be missed if the CCP were used. [ABSTRACT FROM PUBLISHER]

Background: No published study has addressed the effect of genistein postconditioning on gastric ischemia-reperfusion (GI-R) injury in rats.Aim: To examine whether capsaicin receptor-mediated genistein postconditioning protects against gastric ischemia-reperfusion injury via the PI3K/Akt signal pathway.Methods and Results: Chloraldurat-anesthetized rats underwent occlusion of the celiac artery for 30 min, followed by 60 min of reperfusion. Based on this animal model of gastric ischemia-reperfusion injury, genistein at doses of 100, 500 or 1,000 μg/kg was administered via peripheral vein 5 min before reperfusion. The dose of 500 μg/kg was optimal for postconditioning, at which the severity of I-R-induced gastric injury significantly decreased. Immunohistochemistry also showed that gastric mucosal cell apoptosis decreased. Capsazepine (CPZ), a specific antagonist for the capsaicin receptor, was administered (1,000 μg/kg, i.v.) just before ischemia. Capsaicin (50 mg/kg, s.c.) once a day for 4 days reversed the protective effects of genistein. Reverse transcription-polymerase chain reaction (RT-PCR) and Western blotting showed increased calcitonin gene-related peptide (CGRP) expression in genistein group but not in capsazepine or capsaicin group. CGRP inhibitor CGRP8-37 also prevented the effects of genistein in decreasing gastric mucosal injury index. In addition, PI3K inhibitor LY294002 (1.5 mg/kg) reversed the protective effect of genistein. Compared with genistein group, Western blots also demonstrated decreased Akt phosphorylation in LY294002 group.Conclusion: Our data suggest that capsaicin receptors mediated the protective effects of genistein postconditioning. CGRP secreted by activated capsaicin-sensitive neurons played an important role in the protective effects of genistein. PI3K/Akt pathway was also involved in the protective effects of genistein. [ABSTRACT FROM AUTHOR]

Synchrotron intensity and polarization gradients (SIG and SPG), proposed by Lazarian et al. and Lazarian & Yuen, present a new way to recover the mean magnetic field direction in the plane of the sky. To measure the magnetization level, Lazarian et al. suggested that the methods used in the context of the "Velocity Gradient Technique" could also be used on the SIG and SPG contexts. In this work we test the two proposed methods, named "top-base" and the circular standard deviation, "S," to obtain the level of magnetization from synchrotron emission. In order to test the methods, we generate synthetic observations from magnetohydrodynamic computer simulations, with Alfvénic Mach numbers, MA ∈ [0.2,1.7]. Using a Bayesian analysis we find that the circular standard deviations for the SIG and SPG methods are able to recover the magnetization for cases with signal-to-noise ratio ≳5. We found that for weak Faraday depolarization and different angles between the magnetic field direction and the line of sight the magnetization level can still be estimated. [ABSTRACT FROM AUTHOR]

This study was conducted to identify new quantitative trait loci (QTLs) that have stable effects for eating and cooking quality (ECQ) of rice. Three recombinant inbred line populations of indica rice were each planted in two years. Three traits for ECQ, amylose content (AC), gel consistency (GC) and alkali spreading value (ASV), were measured for QTL analysis. A total of 13 QTLs were detected, including four for AC, six for ASV and three for GC. Two QTLs, qGC4 in the interval RM16252–RM335 on the short arm of chromosome 4 and qGC6.2 in the Alk region, were validated in a population derived from a residual heterozygote that was homozygous at the major locus Wx. In the absence of segregation at the Wx locus, qGC4 and qGC6.2 had additive effects of 2.46 and 8.18 mm, respectively, offering a potential for improving GC property of rice varieties. Comparison between qGC4 and previous results suggests that qGC4 is likely a new QTL for GC, providing a candidate for gene cloning and functional characterization. [ABSTRACT FROM AUTHOR]

Mechanisms of time-dependent dielectric breakdown (TDDB) in nonfilamentary a-Si/TiO2 RRAM cell [a-vacancy modulated conductive oxide (VMCO)] have been examined in this paper, including defects generation in the grain boundary, defects clustering, and different defects generation rates in a-Si and TiO2 layers. The unique feature of a bimodal Weibull distribution at low-resistance state (LRS) and a single shallow slope distribution at high-resistance state (HRS) cannot be explained by the above mechanisms. By using a combination of constant voltage stress, time-to-breakdown Weibull distribution, and random telegraph noise (RTN)-based defect profiling in devices of various sizes, layer thicknesses, and processes, it is revealed that the defect profile is modulated when switching between HRS and LRS and the correlation of defect profile modulation with local defect generation rate can explain the difference in Weibull distributions at HRS and LRS. The transition from bimodal distribution at LRS to a single-steep slope with thinner a-Si layer, and the good area scaling of Weibull distribution at HRS but not at LRS, can also be explained. The critical layers affecting the TDDB in a-VMCO are identified, providing useful guidance for device performance improvement. [ABSTRACT FROM AUTHOR]

Negative bias temperature instability (NBTI)-generated defects (GDs) have been widely observed and known to play an important role in device’s lifetime. However, its characterization and modeling in nanoscaled devices is a challenge due to their stochastic nature. The objective of this paper is to develop a fast and accurate technique for characterizing the statistical properties of NBTI aging, which can be completed in one day and thus reduce test time significantly. The fast speed comes from replacing the conventional constant voltage stress by the voltage step stress (VSS), while the accuracy comes from capturing the GDs without recovery. The key advances are twofold: first, we demonstrate that this VSS-GD technique is applicable for nanoscaled devices; second, we verify the accuracy of the statistical model based on the parameters extracted from this technique against independently measured data. The proposed method provides an effective solution for GD evaluation, as required when qualifying a CMOS process. [ABSTRACT FROM PUBLISHER]

Resistive-switching random access memory (RRAM) is widely considered as a disruptive technology. Despite tremendous efforts in theoretical modeling and physical analysis, details of how the conductive filament (CF) in metal-oxide-based filamentary RRAM devices is modified during normal device operations remain speculative, because direct experimental evidence at defect level has been missing. In this paper, a random-telegraph-signal-based defect-tracking technique (RDT) is developed for probing the location and movements of individual defects and their statistical spatial and energy characteristics in the CF of state-of-the-art hafnium-oxide RRAM devices. For the first time, the critical filament region of the CF is experimentally identified, which is located near, but not at, the bottom electrode with a length of nanometer scale. We demonstrate with the RDT technique that the modification of this key constriction region by defect movements can be observed and correlated with switching operation conditions, providing insight into the resistive switching mechanism. [ABSTRACT FROM PUBLISHER]

To predict the negative bias temperature instability (NBTI) toward the end of pMOSFETs’ ten years lifetime, power-law-based extrapolation is the industrial standard method. The prediction accuracy crucially depends on the accuracy of time exponents, n. n reported by early work spreads in a wide range and varies with measurement conditions, which can lead to unacceptable errors when extrapolated to ten years. The objective of this paper is to find how to make n extraction independent of measurement conditions. After removing the contribution from as-grown hole traps, a new method is proposed to capture the generated defects (GDs) in their entirety. n extracted by this method is around 0.2 and insensitive to measurement conditions for the four fabrication processes we tested. The model based on this method is verified by comparing its prediction with measurements. Under ac operation, the model predicts that the GD can contribute to ~90% of NBTI at ten years. [ABSTRACT FROM PUBLISHER]

In the study, we investigated the effect of histamine microinjected into cerebellar fastigial nucleus (FN) on stress gastric mucosal damage (SGMD), and its mechanisms in rats. The model of SGMD was established by restraining and water (21±1 °C)-immersion for 3 h. The gastric mucosal damage index (GMDI) indicated the severity of gastric mucosal damage. Histamine or receptor antagonist was microinjected into the FN. The decussation of superior cerebellar peduncle (DSCP) and the lateral hypothalamic area (LHA) were destroyed, respectively. The pathological changes of gastric mucosa were evaluated using biological signal acquisition system, Laser-Doppler flowmeter, and western blotting. We found that the microinjection of histamine (0.05, 0.5, and 5 μg) into FN significantly attenuated the SGMD, in a dose-dependent manner, whereas, the microinjection of histamine H 2 receptor antagonist, ranitidine, and glutamic acid decarboxylase antagonist, 3-mercaptopropionic acid (3-MPA) exacerbated the SGMD. The protective effect of histamine on SGMD was abolished by electrical lesion of DSCP or chemical ablation of LHA. The microinjection of histamine decreased the discharge frequency of the greater splanchnic nerve, and the gastric mucosal blood flow was increased. In addition, the cellular proliferation was enhanced, but the cellular apoptosis was reduced in the gastric mucosa. Also the pro-apoptosis protein, Bax, and caspase-3 were down-regulated, and the anti-apoptosis protein, Bcl-2 was up-regulated following microinjection of histamine. In conclusion, the FN participated in the regulation of SGMD after histamine microinjected into FN, and cerebellar–hypothalamic circuits (include: DSCP, LHA) contribute to the process, which may provide a new therapeutic strategy for SGMD. [ABSTRACT FROM AUTHOR]

Continuing CMOS performance scaling requires developing MOSFETs of high-mobility semiconductors and InGaAs is a strong candidate for n-channel. InGaAs MOSFETs, however, suffer from high densities of border traps, and their origin and impact on device characteristics are poorly understood at present. In this paper, the border traps in nMOSFETs with an In0.53Ga0.47As channel and Al2O3 gate oxide are investigated using the discharging-based energy profiling technique. By analyzing the trap energy distributions after charging under different gate biases, two types of border traps together with their energy distributions are identified. Their different dependences on temperature and charging time support that they have different physical origins. The impact of channel thickness on them is also discussed. Identifying and understanding these different types of border traps can assist in the future process optimization. Moreover, border trap study can yield crucial information for long-term reliability modeling and device time-to-failure projection. [ABSTRACT FROM AUTHOR]

The low performance of the manual recognition of proton-recoil tracks in nuclear emulsions has limited its application to energy spectrum measurement of a pulsed neutron source. We developed an automated microscope system to trace proton-recoil tracks in nuclear emulsions. Given a start point on the proton track of interest, the microscope system can automatically trace and record the entire track using an image processing algorithm. Tests indicate that no interaction of the operator is needed in tracing the entire track. This automated microscope greatly reduces the labor of the operator and increases the efficiency of track data collection in nuclear emulsion. [ABSTRACT FROM AUTHOR]

High density of electron trapping in high- \kappa intergate dielectric (IGD) materials remains a major concern for planar memory cells with either poly-Si or hybrid floating gates (FGs). In this paper, for the first time, using the ultrafast I{-}V measurements, it is demonstrated that a significant portion of the P/E windows are actually contributed by electrons trapped initially in the high- \kappa$ IGD stacks during program/erase, and then discharged to FG or control gate during verification. More importantly, it is demonstrated, for the first time, that this fast charge transition can be suppressed using novel multilayer high- $\kappa$ IGD structures, and the fast window instability can be eliminated. [ABSTRACT FROM PUBLISHER]

Poly-Si (p-Si) channel used in 3-D Flash memory devices is the main source of degraded performance, such as the high interface state density. Charge pumping (CP) signals in the 3-D nanoscale vertical device with p-Si channel are analyzed in this paper using the variable amplitude CP technique. For the first time, it has been demonstrated experimentally that the broad CP edge is due to the threshold voltage variation in the p-Si channel caused by both the trapping in interface states and the source/drain p-n junction diffusion, and their impacts can be separately evaluated. Hot carrier stress in the tunneling FET operation modes and statistical analysis are used to provide supporting evidence. [ABSTRACT FROM PUBLISHER]

High-\kappa stacks have been used in the 20-nm generation of floating gate (FG) flash memory cells as the interpoly dielectric (IPD). However, electron trapping in high-\kappa materials remains a major concern for the further development of FG technology. For conventional FG cells, read/pass disturbance in the erased states is a major issue. In this paper, for the first time, it is observed that electron trapping/detrapping in the high-\kappa IPD layers can cause severe abnormal read/pass disturbances in the programmed states. Extensive evidence shows that this instability in programmed states originates from several competing mechanisms, including the redistribution of electron trapping between the IPD and FG and the electron discharging from FG/IPD into the control gate. This issue should be addressed in the development of future generations of FG Flash technology with higher-\kappa IPD materials. [ABSTRACT FROM PUBLISHER]

Abstract: Objective: To explore the effect and mechanism of Phloretin on human γδ T cells killing colon cancer SW-1116 cells. Methods: γδ T cells were amplified in vitro from human peripheral blood mononuclear cells through isopentenyl pyrophosphate method (IPP). After cocultured different concentrations of Phloretin with γδ T cells or SW-1116 cells for 48h respectively, MTT assay was used to test the growth curve of these two cells; Flow cytometry to test the expression of Granzyme B (GraB), perforin (PFP), CD107a and IFN-γ of γδ T cells; Lactate dehydrogenase (LDH) release assay to test the cytotoxic activity of the γδ T cells on SW-1116 cells; and Western blot to test the Wnt3a expression of the γδ T cells. Results: After cultured with IPP for ten days, the percentage of γδ T cells increased from 3.31±3.00% to 78.40±10.30%. Compared to the control group, when the concentration of Phloretin increased from 2.35μg/ml to 18.75μg/ml, it could significantly proliferate the γδ T cell growth (P <0.05) and inhibit the growth of SW-1116 cells in dose–response, and the expression of GraB, PFP, CD107a and Wnt3a significantly increased (P <0.05). Significant positive relationships were observed among CD107a and PFP, GraB, cytotoxicity (P <0.05). The percentage of IFN-γ producing γδ T cells treated with Phloretin was significantly higher than control group. Conclusion: Phloretin can enhance the killing effect of γδ T cells on SW-1116 cells; the mechanism may be that Phloretin could proliferate the γδ T cell growth, increase the expression of PFP and GraB, activate the Wnt signaling pathway, and produce higher level of IFN-γ. Indeed CD107a expression probably correlates quite well with antitumor activity. [Copyright &y& Elsevier]

NPM1 mutation is the most common molecular abnormality in patients with acute myeloid leukemia (AML), especially normal karyotype AML (NK-AML), and is associated with a favorable prognosis in the absence of concomitant FLT3-ITD. Like other molecular abnormalities such as FLT3-ITD, C/EBPα and c-Kit mutation, NPM1 mutation normally presents as a recurrent molecular abnormality. The NPM1 mutation is generally used as a molecular marker in the prognosis evaluation of a patient with AML. Here, we report a different case. He was first diagnosed with NPM1 mutation-positive acute monocytic leukemia. However, he achieved no remission, but the NPM1 mutation dramatically became negative after induction chemotherapy. Finally, he achieved complete remission after salvage chemotherapy and the NPM1 mutation was still negative. To our knowledge, this is a rare case according to the worldwide published literature. [ABSTRACT FROM AUTHOR]

Endurance is one of the key criteria for Flash memory technologies, particularly for the generations beyond 30 nm with high-\kappa materials. It is observed in this paper that the electron trapping in high-\kappa layers causes threshold-voltage window closure under dynamic program/erase cycling operations. This closure does not originate from the generation of new traps or from further trapping of electrons injected from the gate during erasing. By utilizing a recently developed multipulse technique, it is found that the energy distribution of the electron trapping in the high-\kappa layer significantly changes after cycling. Electron trapping at the deeper energy levels continuously increases as cycling proceeds, because it does not reach saturation within one programming pulse. The trapping in deep levels cannot be discharged under typical erase conditions, and an increase in deep-level trapping also causes a reduction of trapping at shallow levels. It is concluded that the window closure observed in this paper is caused by a combination of increased deep trapping after erasing and a reduction of shallow trapping after programming. [ABSTRACT FROM PUBLISHER]

T(15;17) is the most common chromosomal aberration in patients with acute promyelocytic leukemia (APL), leading to the formation of PML-RARα fusion gene. In a small subset of patients with APL, the RARα gene is fused with different partners. Here, we report a rare APL case with STAT5B-RARα fusion transcript. Cytomorphologic and immunophenotypic analyses showed typical features of APL. However, cytogenetic analysis showed normal karyotype, and interphase fluorescence in situ hybridization (FISH) showed PML-RARα negative. Quantitative RT-PCR also showed PML-RARα negative but STAT5B-RARα positive and sequencing analysis confirmed the result. Molecular markers including FLT3, NPM1, c-Kit and C/EBPα mutation were all negative. To our knowledge, this is the first APL patient with STAT5B-RARα in Chinese population and the fifth patient around the world according to published paper. [ABSTRACT FROM AUTHOR]

Abstract: The purpose of this study was to investigate the effects and mechanisms of 17β-estradiol pharmacological postconditioning on gastric epithelial cells hypoxia/reoxygenation injury by using an in vitro model of human gastric epithelial cells. The model of hypoxia/reoxygenation was established with human gastric epithelial cell line. The gastric epithelial cell viability was detected by 3-(4, 5-dimethylthazol-2-yl)-2, 5-diphenyl tetrazolium bromide (MTT) assays. Gastric epithelial cellular apoptosis was determined by Hoechst 33258 fluorochrome staining and flow cytometric analysis. Contents of malondialdehyde (MDA) and the activity of superoxide dismutase (SOD) were measured by Colorimetry analysis. The protein expression of Bcl-2 and Bax in different groups was determined by Western blot analyses and immunocytochemistry assay. 17β-estradiol (10−8, 10−7 and 10−6 mol/l) inhibited hypoxia/reoxygenation injury and 17β-estradiol (10−6 mol/l) obviously attenuated hypoxia/reoxygenation injury 3h hypoxia followed by 4h reoxygenation. 17β-estradiol promoted gastric epithelial cell viability and inhibited the gastric epithelial cell apoptosis, and meanwhile, decreased the MDA content and increased SOD activity. The level of Bcl-2 protein was restored to the normal level by 17β-estradiol pharmacological postconditioning. In contrast, the Bax protein level was markedly reduced by 17β-estradiol pharmacological postconditioning. These effects of 17β-estradiol were inhibited by pretreatment with fulvestrant. These data suggested that 17β-estradiol seems involved in regulation of gastric hypoxia/reoxygenation injury and gastroprotection, and its protective effects were strongly related to estrogen receptor. [ABSTRACT FROM AUTHOR]

A new discharge-based multipulse technique has been developed in this paper, which overcomes the shortcomings of the existing techniques, such as the charge pumping, charge injection and sensing, and two-pulse C–V techniques. It captures the energy signature for electron traps across high- \kappa materials and can be a useful tool for material selection during technology development. Trap distributions in \HfO2, \Al2\O3, and HfAlO have been compared to identify the effects of material variation. It is observed that hafnium gives the shallow traps at about 0.45 eV above the silicon conduction band bottom (Si ECB), and the deep traps at 0.8 eV below the Si ECB are caused by aluminum. HfAlO combines the features in \HfO2 and \Al2\O3. A peak near the Si ECB has been observed in all the three materials. [ABSTRACT FROM PUBLISHER]

Background: The purpose of this study was to elucidate the role of nuclear factor kappaB (NF-kappaB) in the development of gastric ischemia-reperfusion (GI-R) injury and in mediating the effects of angiotensin II (Ang II) in the paraventricular nucleus (PVN) on GI-R injury.Methods: GI-R injury was induced in rats by clamping the celiac artery for 30 min and then reperfusing for 1 h. A cannula was inserted into the unilateral PVN for microinjection of Ang II. The expressions and levels of NF-kappaB (p65), IkappaB-alpha, and phosphorylated IkappaB-alpha in rat gastric mucosa were examined by Western blotting and immunohistochemistry. A laser Doppler flowmeter was used to assess gastric blood flow (GBF). Malondialdehyde (MDA) was determined using the thiobarbituric acid (TBA) method, and superoxide dismutase (SOD) activity was determined by the xanthine/xanthine oxidase method.Results: Microinjection of Ang II (3, 30, and 300 ng) into the PVN dose-dependently inhibited GI-R injury. The levels and expressions of NF-kappaB (p65) and phosphospecific IkappaB-alpha protein increased 1 h after GI-R and were markedly reduced by microinjection of Ang II into the PVN. In contrast, the level and expression of IkappaB-alpha protein decreased 1 h after ischemia-reperfusion and recovered to the normal level by microinjection of Ang II into the PVN. The effects of Ang II were prevented by pretreatment with the Ang II AT1 receptor antagonist losartan (5 microg) microinjected into the lateral cerebral ventricle. Inhibition of NF-kappaB activity by pyrrolidine dithiocarbamate (PDTC, 200 mg/kg) produced similar effects in rats subjected to ischemia-reperfusion with or without microinjection of Ang II into the PVN. Administration of PDTC attenuated gastric mucosal injury and suppressed the activation of NF-kappaB (p65). Ang II microinjection into the PVN increased GBF and decreased the MDA content but did not alter SOD activity in the gastric mucosa following ischemia-reperfusion.Conclusions: NF-kappaB plays a role in PVN Ang II-mediated protection against GI-R injury. These central effects of Ang II are mediated by AT1 receptors. [ABSTRACT FROM AUTHOR]

Abstract: Our previous study demonstrated that electrical stimulation of the hypothalamic paraventricular nucleus (PVN) protects against gastric ischemia-reperfusion (GI-R) injury, but it is still unknown whether angiotensin II (Ang II) in the PVN plays a role in the development of GI-R. The purpose of this study was to investigate the effect of Ang II in the PVN on GI-R injury. GI-R injury was induced in rats by clamping the celiac artery for 30 min, and then reperfusing for 30 min, 1 h, 3 h, 6 h or 24 h, respectively. A cannula was inserted into the unilateral PVN for microinjection of Ang II. The extent of gastric mucosal damage was determined by gross and histological methods. We found that microinjection of pharmacological doses of Ang II (3, 30, and 300 ng) into the PVN dose-dependently inhibited GI-R injury, and that Ang II (30 ng) markedly attenuated GI-R injury at 1 h and 3 h after reperfusion. The effect of Ang II was prevented by pretreatment with the Ang II AT1 receptor antagonist losartan (5 µg) into the lateral cerebral ventricle. Furthermore, the protective effect of Ang II on GI-R injury was abolished by propranolol (1 mg/kg, i.v.) or disconnection of the nerves innervating the adrenal glands, was augmented by sympathectomy or phentolamine (1 mg/kg, i.v.), and was not affected by subdiaphragmatic vagotomy or atropine (1 mg/kg, i.v.). These results indicate that the PVN is a responsive site for central Ang II-induced protection against GI-R injury. The central effects of Ang II are mediated by AT1 receptors in the PVN, and the peripheral effects by a sympathetic-adrenal gland/β-adrenoceptor pathway. [Copyright &y& Elsevier]

1. The aim of the present study was to elucidate the role of the extracellular signal-regulated kinase (ERK) pathway in mediating the effects of electrical stimulation of the paraventricular nucleus (PVN) on apoptosis and proliferation induced by gastric ischaemia–reperfusion injury (GI/RI). 2. To investigate the effects of electrical stimulation of the hypothalamic PVN on gastric mucosal apoptosis and proliferation in response to ischaemia–reperfusion (I/R), we used a GI/RI model by clamping the coeliac artery for 30 min and then reperfusing the artery for 30 min or 1, 3 or 6 h. We used immunohistochemistry and western blotting to investigate the expression, activation and distribution of ERKs and the dynamic changes in their downstream cellular factors Bcl-2 and Bax at different times subsequent to electrical stimulation of the PVN in the I/R-injured gastric mucosa. 3. Electrical stimulation of the PVN markedly attenuated GI/RI at 30 min and 1 and 3 h after reperfusion. Electrical stimulation decreased gastric mucosal apoptosis, increased gastric mucosal proliferation and promoted the expression and activation of phosphorylated (p)-ERK1/2 30 min after reperfusion. Electrical stimulation increased the expression of Bcl-2 and decreased the expression of Bax at 30 min and 1 and 3 h after reperfusion. In contrast, inhibition of ERK1/2 activity by the specific upstream mitogen-activated protein kinase kinase inhibitor PD98059 produced similar effects at 1 h after reperfusion in rats subjected to I/R with or without electrical stimulation of the PVN. Administration of PD98059 aggravated gastric mucosal injury, increased apoptosis, decreased proliferation in gastric mucosal cells, decreased the expression and activity of p-ERK1/2 and Bcl-2 expression and increased Bax expression. 4. These results indicate that the PVN protects against GI/RI and that this protection is associated with the inhibition of cellular apoptosis and the promotion of proliferation in the gastric mucosa, probably by activating the ERK pathway. [ABSTRACT FROM AUTHOR]