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The construction of a large-scale quantum internet requires quantum repeaters containing multiple entangled photon sources with identical wavelengths. Semiconductor quantum dots can generate entangled photon pairs deterministically with high fidelity. However, realizing wavelength-matched quantum-dot entangled photon sources faces two difficulties: the non-uniformity of emission wavelength and exciton fine-structure splitting induced fidelity reduction. Typically, these two factors are not independently tunable, making it challenging to achieve simultaneous improvement. In this work, we demonstrate wavelength-tunable entangled photon sources based on droplet-etched GaAs quantum dots through the combined use of AC and quantum-confined Stark effects. The emission wavelength can be tuned by ~1 meV while preserving an entanglement fidelity f exceeding 0.955(1) in the entire tuning range. Based on this hybrid tuning scheme, we finally demonstrate multiple wavelength-matched entangled photon sources with f>0.919(3), paving a way towards robust and scalable on-demand entangled photon sources for quantum internet and integrated quantum optical circuits., Comment: Main text: 11 pages, 6 figures, Supplementary information: 7 pages, 6 figures, 2 tables

We present a generalization of Stampacchia Lemma and give applications to regularity property of weak and entropy solutions of degenerate elliptic equations of the form $$ \left\{ \begin{array}{llll} -\mbox{div} (a(x,u(x)) Du (x)) =f(x), & \mbox { in } \Omega, \\ u(x)=0, & \mbox { on } \partial \Omega, \end{array} \right. $$ where $$ \frac {\alpha}{(1+|u|) ^\theta} \le a(x,s)\le \beta $$ with $0<\alpha \le \beta <\infty$ and $0\le \theta <1$., Comment: 10 pages

Thin film 4H-silicon carbide (4H-SiC) is emerging as a contender for realizing large-scale optical quantum circuits due to its high CMOS technology compatibility and large optical nonlinearities. Though, challenges remain in producing wafer-scale 4H-SiC thin film on insulator (4H-SiCOI) for dense integration of photonic circuits, and in efficient coupling of deterministic quantum emitters that are essential for scalable quantum photonics. Here we demonstrate hybrid integration of self-assembled InGaAs quantum dots (QDs) based single-photon sources (SPSs) with wafer-scale 4H-SiC photonic chips prepared by ion slicing technique. By designing a bilayer vertical coupler, we realize generation and highly efficient routing of single-photon emission in the hybrid quantum photonic chip. Furthermore, we realize a chip-integrated beamsplitter operation for triggered single photons through fabricating a 1x2 multi-mode interferometer (MMI) with a symmetric power splitting ratio of 50:50. The successful demonstration of heterogeneously integrating QDs-based SPSs on 4H-SiC photonic chip prepared by ion slicing technique constitutes an important step toward CMOS-compatible, fast reconfigurable quantum photonic circuits with deterministic SPSs., Comment: 16 pages, 4 figures

The recent progress in chip-scale integrated photonics has stimulated the rapid development of material platforms with desired optical properties. Among the different material platforms that are currently investigated, the third-generation semiconductor, silicon carbide (SiC), offers the broadest range of functionalities, including wide bandgap, high optical nonlinearities, high refractive index, and CMOS-compatible device fabrication process. Here, we provide an overview of SiC-based integrated photonics, presenting the latest progress on investigating its basic optical and optoelectronic properties, as well as the recent developments in the fabrication of several typical approaches for light confinement structures that form the basic building blocks for low-loss, high functional and industry-compatible integrated photonic platform. Moreover, recent works employing SiC as optically-readable spin hosts for quantum information applications are also summarized and discussed. As a still-developing integrated photonic platform, the prospects and challenges of SiC material platform in the field of integrated photonics are also discussed, followed by potential solutions., Comment: 47pages, 15 figures

The realization of ultrahigh quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high Q resonators provide an extreme environment of storage of light to enable observations of many unconventional nonlinear optical phenomenon with high efficiencies. Here, we demonstrate an ultra-high Q factor (7.1*10^6) microresonator on the 4H-silicon-carbide-on-insulator (4H-SiCOI) platform in which both \c{hi}^(2) and \c{hi}^(3) nonlinear processes of high efficiencies have been generated. Broadband frequency conversions, including second-, third-, fourth-harmonic generation were observed. Cascaded Raman lasing was demonstrated in the SiC microresonator for the first time to the best of our knowledge. Broadband Kerr frequency combs covering from 1300 to 1700 nm were achieved using a dispersion-engineered SiC microresonator. Our demonstration is a significant milestone in the development of SiC photonic integrated devices.

Wavelength-sized microdisk resonators were fabricated on a single crystalline 4H-silicon-carbide-oninsulator platform (4H-SiCOI). By carrying out microphotoluminescence measurements at room temperature, we show that the microdisk resonators support whispering-gallery modes (WGMs) with quality factors up to $5.25 \times 10^3$ and mode volumes down to $2.69 \times(\lambda /n)^3$ at the visible and near-infrared wavelengths. Moreover, the demonstrated wavelength-sized microdisk resonators exhibit WGMs whose resonant wavelengths compatible with the zero-phonon lines of spin defects in 4H-SiCOI, making them a promising candidate for applications in cavity quantum electrodynamics and integrated quantum photonic circuits., Comment: 5 pages, 4 figures

We design a new absolute optical instrument by composing Luneburg lens and Lissajous lens, and analyze its imaging mechanism from the perspective of simple harmonic oscillations. The imaging positions are determined by the periods of motions in x and y directions. Besides, instruments composed with multi parts are also devised, which can form imaging or self-imaging as long as the motion periods of x and y directions are satisfied to similar conditions. Our work provides a new way to analyze the imaging of different lens by simply dissociating the equations of motions, and reveal the internal mechanism of some absolute optical instruments., Comment: 4 pages, 4 figures; This is an application of simple harmonic oscillations when I am preparing the course of University Physics; Huashuo Han, Pinchao He, Keqin Xia, and Jiaxiang Zhang are undergraduate students in Xiamen University Malaysia

Evidence suggests that brain network dynamics is a key determinant of brain function and dysfunction. Here we propose a new framework to assess the dynamics of brain networks based on recurrence analysis. Our framework uses recurrence plots and recurrence quantification analysis to characterize dynamic networks. For resting-state magnetoencephalographic dynamic functional networks (dFNs), we have found that functional networks recur more quickly in people with epilepsy than healthy controls. This suggests that recurrence of dFNs may be used as a biomarker of epilepsy. For stereo electroencephalography data, we have found that dFNs involved in epileptic seizures emerge before seizure onset, and recurrence analysis allows us to detect seizures. We further observe distinct dFNs before and after seizures, which may inform neurostimulation strategies to prevent seizures. Our framework can also be used for understanding dFNs in healthy brain function and in other neurological disorders besides epilepsy., Comment: 77 pages, 11 figures; note: the acknowledgments section is the most complete in this arxiv version (compared to the published version in EJN)