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7. Mechanical Switching of Nanoscale Multiferroic Phase Boundaries

Author

Li, Yong-Jun, Wang, Jian-Jun, Ye, Jian-Chao, Ke, Xiao-Xing, Gou, Gao-Yang, Wei, Yan, Xue, Fei, Wang, Jing, Wang, Chuan-Shou, Peng, Ren-Ci, Deng, Xu-Liang, Yang, Yong, Ren, Xiao-Bing, Chen, Long-Qing, Nan, Ce-Wen, and Zhang, Jin-Xing

Subjects
Condensed Matter - Materials Science
Abstract

Tuning the lattice degree of freedom in nanoscale functional crystals is critical to exploit the emerging functionalities such as piezoelectricity, shape-memory effect, or piezomagnetism, which are attributed to the intrinsic lattice-polar or lattice-spin coupling. Here it is reported that a mechanical probe can be a dynamic tool to switch the ferroic orders at the nanoscale multiferroic phase boundaries in BiFeO 3 with a phase mixture, where the material can be reversibly transformed between the "soft" tetragonal-like and the "hard" rhombohedrallike structures. The microscopic origin of the nonvolatile mechanical switching of the multiferroic phase boundaries, coupled with a reversible 180{\deg} rotation of the in-plane ferroelectric polarization, is the nanoscale pressure-induced elastic deformation and reconstruction of the spontaneous strain gradient across the multiferroic phase boundaries. The reversible control of the room-temperature multiple ferroic orders using a pure mechanical stimulus may bring us a new pathway to achieve the potential energy conversion and sensing applications.

Published
2017
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12. Efficacy of Atezolizumab Plus Bevacizumab Combined with Transarterial Chemoembolization for Unresectable Hepatocellular Carcinoma: A Real-World Study.

Author

Shen, Xiao, Zhang, Jin-Xing, Liu, Jin, Liu, Sheng, Shi, Hai-Bin, Cheng, Yuan, Zhang, Qing-Qiao, Yin, Guo-Wen, and Zu, Qing-Quan

Subjects
CHEMOEMBOLIZATION, ADVERSE health care events, TREATMENT effectiveness, HEPATOCELLULAR carcinoma, OVERALL survival
Abstract

Objective response rate (ORR), overall survival (OS), and progression-free survival (PFS) as outcomes. Predictors for OS and PFS were also analyzed. Treatment-related adverse events (TRAEs) were recorded and assessed. Results: Ninety-two patients were enrolled in this study, with a median follow-up duration of 14.1 months. The ORRs based on the modified Response Evaluation Criteria in Solid Tumors (RECIST) and RECIST 1.1 criteria were 54.3% and 41.3%, respectively. The median OS and PFS of the patients were 15.9 months [95% confidence interval (CI), 14.5– 17.2 months] and 9.1 months (95% CI, 7.4– 10.8 months), respectively. Multivariate analyses revealed that the Eastern Cooperative Oncology Group score and neutrophil‒lymphocyte ratio were independent risk factors for OS, whereas tumor size and extrahepatic metastasis were independent risk factors for PFS. Grade 3/4 TRAEs occurred in 16.3% (15/92) of the patients and were controlled conservatively. Conclusion: The combination of Atezo/Bev with TACE demonstrated acceptable synergistic therapeutic effects and manageable safety profiles in patients with unresectable HCC. [ABSTRACT FROM AUTHOR]

Published
2024
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25. Electric-field control of topological spin textures in BiFeO3/La0.67Sr0.33MnO3 heterostructure at room temperature.

Author

Wang, Ai-Ji, Yang, Liang, Ge, Jian, Deng, Gong-Xun, Yang, Yu-Ben, Lu, Jing-Di, Zhang, Yue-Lin, Wang, Yin-Shu, Yu, Hai-Ming, Wang, Ling-Fei, Nan, Ce-Wen, and Zhang, Jin-Xing

Abstract

Copyright of Rare Metals is the property of Springer Nature and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Published
2023
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32. Room‐Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr‐Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid

Author

Xu, Meng, primary, Yan, Jian‐Min, additional, Chen, Ting‐Wei, additional, Xu, Zhi‐Xue, additional, Wang, Hui, additional, Guo, Lei, additional, Gao, Guan‐Yin, additional, Yan, Shu‐Ying, additional, Wang, Fei‐Fei, additional, Zhang, Jin‐Xing, additional, Zhao, Weiyao, additional, Li, Xiao‐Guang, additional, Luo, Hao‐Su, additional, and Zheng, Ren‐Kui, additional

Published
2019
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33. Nonvolatile and Reversible Ferroelectric Control of Electronic Properties of Bi2Te3 Topological Insulator Thin Films Grown on Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals

Author

Yan, Jian-Min, Xu, Zhi-Xue, Chen, Ting-Wei, Xu, Meng, Zhang, C, Zhao, Xu-Wen, Liu, Fei, Guo, Lei, Yan, Shu-Ying, Gao, Guan-Yin, Wang, Feifei, Zhang, Jin-Xing, Dong, Si-Ning, Li, Xiao-Guang, Luo, Haosu, Zhao, Weiyao, Zheng, Ren-Kui, Yan, Jian-Min, Xu, Zhi-Xue, Chen, Ting-Wei, Xu, Meng, Zhang, C, Zhao, Xu-Wen, Liu, Fei, Guo, Lei, Yan, Shu-Ying, Gao, Guan-Yin, Wang, Feifei, Zhang, Jin-Xing, Dong, Si-Ning, Li, Xiao-Guang, Luo, Haosu, Zhao, Weiyao, and Zheng, Ren-Kui

Published
2019

34. Room-Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr-Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid

Author

Xu, Meng, Yan, Jian-Min, Chen, Ting-Wei, Xu, Zhi-Xue, Wang, Hui, Guo, Lei, Gao, Guan-Yin, Yan, Shu-Ying, Wang, Feifei, Zhang, Jin-Xing, Zhao, Weiyao, Li, Xiao-Guang, Luo, Haosu, Zheng, Ren-Kui, Xu, Meng, Yan, Jian-Min, Chen, Ting-Wei, Xu, Zhi-Xue, Wang, Hui, Guo, Lei, Gao, Guan-Yin, Yan, Shu-Ying, Wang, Feifei, Zhang, Jin-Xing, Zhao, Weiyao, Li, Xiao-Guang, Luo, Haosu, and Zheng, Ren-Kui

Abstract

Integration of different functional materials into a device in which the physical properties can be tuned using an electric field in a reversible and nonvolatile manner is highly desired for the fabrication of compact and energy-efficient multifunctional electronic devices. The integration of In2O3-based semiconductor thin films with ferroelectric 0.71PbMg1/3Nb2/3O3-0.29PbTiO3 (PMN-0.29PT) single crystals in ferroelectric-field-effect-transistor devices that allow for the tuning of carrier density, carrier type, Fermi level, and their related properties in a reversible and nonvolatile manner, is reported. Specifically, gating of In2-x Crx O3 (x = 0, 0.02, 0.05, 0.08, 0.11) films with a PMN-0.29PT layer provides a means to reversibly tune and modulate the resistivity of the films up to an on-and-off ratio of 5.2 x 104% in a nonvolatile manner at room temperature. Such resistivity modulation is associated with reversible and nonvolatile transformation of the carrier type between n-type and p-type due to polarization switching. Additionally, reversible switching of resistivity is realized utilizing DEME-TFSI ionic liquid as a top-gate material. These results demonstrate that electrical-voltage control of physical properties using PMN-xPT as both substrate and gating material provides a highly effective approach to study the carrier-density/type-related physical properties of semiconductor films.

Published
2019

35. Nonvolatile and Reversible Ferroelectric Control of Electronic Properties of Bi2Te3 Topological Insulator Thin Films Grown on Pb(Mg1/3Nb2/3)O3–PbTiO3 Single Crystals

Author

Yan, Jian-Min, primary, Xu, Zhi-Xue, additional, Chen, Ting-Wei, additional, Xu, Meng, additional, Zhang, Chao, additional, Zhao, Xu-Wen, additional, Liu, Fei, additional, Guo, Lei, additional, Yan, Shu-Ying, additional, Gao, Guan-Yin, additional, Wang, Fei-Fei, additional, Zhang, Jin-Xing, additional, Dong, Si-Ning, additional, Li, Xiao-Guang, additional, Luo, Hao-Su, additional, Zhao, Weiyao, additional, and Zheng, Ren-Kui, additional

Published
2019
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37. Reversible and nonvolatile manipulation of the electronic transport properties of topological insulators by ferroelectric polarization switching

Author

Zhao, Xu-Wen, primary, Dong, Si-Ning, additional, Gao, Guan-Yin, additional, Xu, Zhi-Xue, additional, Xu, Meng, additional, Yan, Jian-Min, additional, Zhao, Wei-Yao, additional, Liu, Yu-Kuai, additional, Yan, Shu-Ying, additional, Zhang, Jin-Xing, additional, Wang, Yu, additional, Lu, Hai-Zhou, additional, Li, Xiao-Guang, additional, Furdyna, J. K., additional, Luo, Hao-Su, additional, and Zheng, Ren-Kui, additional

Published
2018
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39. Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties

Author

Xu, Zhi-Xue, primary, Yan, Jian-Min, additional, Xu, Meng, additional, Guo, Lei, additional, Chen, Ting-Wei, additional, Gao, Guan-Yin, additional, Dong, Si-Ning, additional, Zheng, Ming, additional, Zhang, Jin-Xing, additional, Wang, Yu, additional, Li, Xiao-Guang, additional, Luo, Hao-Su, additional, and Zheng, Ren-Kui, additional

Published
2018
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41. Arterial embolization for hemoptysis in patients with chronic pulmonary tuberculosis and in patients with bronchiectasis.

Author

Lu, Guang-Dong, Zhang, Jin-Xing, Zhou, Chun-Gao, Xia, Jin-Guo, Liu, Sheng, Zu, Qing-Quan, and Shi, Hai-Bin

Subjects
*TUBERCULOSIS, *BRONCHIECTASIS, *TUBERCULOSIS patients, *THERAPEUTIC embolization, *LUNG diseases, *COMPUTED tomography, *THERAPEUTICS
Abstract

Background: Previous studies suggest that recurrence of hemoptysis after arterial embolization is associated with the underlying pulmonary disease. Purpose: To compare the baseline information and imaging findings in patients with hemoptysis due to either chronic pulmonary tuberculosis (PTB) or bronchiectasis and to identify predictors of rebleeding after embolization treatment. Material and Methods: Clinical data of all consecutive chronic PTB and bronchiectasis patients who underwent arterial embolization for hemoptysis from January 2010 to January 2017 in a single center were reviewed. Baseline clinical information, radiological features, and rebleeding rates were compared between patients with chronic PTB and patients with bronchiectasis. Multivariate analysis was used to identify risk factors of recurrence in each patient group. Results: Seventy-six patients with chronic PTB and 97 patients with bronchiectasis were included. Male sex, pleural thickening, multiple embolized arteries, and non-bronchial systemic arterial (NBSA) blood supply were more common in chronic PTB patients. The short-term and long-term recurrence-free rates were significantly lower in the chronic PTB group (P < 0.001). For the chronic PTB group, the presence of lung destruction and shunts were independent predictors of rebleeding during follow-up. Compared with patients who did not undergo computed tomography angiography (CTA) before the procedure, patients with CTA showed less recurrence in the first month after treatment (P = 0.019). Conclusion: Chronic PTB patients had more extensive NBSA blood supply and experienced higher short- and long-term recurrence rates compared with bronchiectasis patients. The risk of rebleeding was high in chronic PTB patients with lung destruction and/or shunts. [ABSTRACT FROM AUTHOR]

Published
2019
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43. Vacancy Structures and Melting Behavior in Rock-Salt GeSbTe

Author

Zhang, Bin, primary, Wang, Xue-Peng, additional, Shen, Zhen-Ju, additional, Li, Xian-Bin, additional, Wang, Chuan-Shou, additional, Chen, Yong-Jin, additional, Li, Ji-Xue, additional, Zhang, Jin-Xing, additional, Zhang, Ze, additional, Zhang, Sheng-Bai, additional, and Han, Xiao-Dong, additional

Published
2016
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45. Mechanical Switching of Nanoscale Multiferroic Phase Boundaries

Author

Li, Yong-Jun, primary, Wang, Jian-Jun, additional, Ye, Jian-Chao, additional, Ke, Xiao-Xing, additional, Gou, Gao-Yang, additional, Wei, Yan, additional, Xue, Fei, additional, Wang, Jing, additional, Wang, Chuan-Shou, additional, Peng, Ren-Ci, additional, Deng, Xu-Liang, additional, Yang, Yong, additional, Ren, Xiao-Bing, additional, Chen, Long-Qing, additional, Nan, Ce-Wen, additional, and Zhang, Jin-Xing, additional

Published
2015
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46. Differences in efficacy of uncovered self-expandable metal stent in relation to placement in the management of malignant distal biliary obstruction.

Author

Zhang, Jin-Xing, Zu, Qing-Quan, Liu, Sheng, Zhou, Chun-Gao, Xia, Jin-Guo, and Shi, Hai-Bin

Subjects
*CHOLESTASIS, *DUODENUM, *HEALTH outcome assessment, *PROBABILITY theory, *SURGICAL stents, *SURVIVAL, *RETROSPECTIVE studies, *CHOLANGITIS
Abstract

Background/Aims: Metal stent insertion is a common palliative treatment for distal malignant biliary obstruction (MBO) but whether placement across the sphincter of Oddi (SO) causes more complications or shorter survival is in question. The aim of this study was to compare the clinical outcomes of percutaneous uncovered self-expandable metal stent placement above and across the SO in patients with distal MBO. Patients and Methods: We retrospectively studied 59 patients who underwent uncovered metal stent placement for distal MBO between January 2012 and March 2016. Stents were placed above the SO for 22 subjects (group A) and across the SO for 37 subjects (group B). Early cholangitis, stent occlusion, and overall survival time were compared between the two groups. Results: Clinical success was 90.9 and 86.5% for groups A and B, respectively. Early cholangitis occurred in 2 patients (9.1%) in group A and in 6 patients (16.2%) in group B (P = 0.645). Median stent patency and median survival time was 105 and 140 days for group A, 120 and 160 days for group B, respectively. The stent occlusion (31.8% in group A and 21.6% in group B, P = 0.454) and the cumulative stent patency times (P = 0.886) did not differ between the two groups. There was no significant difference in cumulative patient survival between the two groups (P = 0.810). Conclusion: Uncovered metal stent placement across the SO did not significantly affect early cholangitis, stent patency, or patient survival. [ABSTRACT FROM AUTHOR]

Published
2018
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47. Ultrahigh Tunability of Room Temperature Electronic Transport and Ferromagnetism in Dilute Magnetic Semiconductor and PMN-PT Single-Crystal-Based Field Effect Transistors via Electric Charge Mediation

Author

Zhu, Qiu-Xiang, primary, Yang, Ming-Min, additional, Zheng, Ming, additional, Zheng, Ren-Kui, additional, Guo, Li-Jie, additional, Wang, Yu, additional, Zhang, Jin-Xing, additional, Li, Xiao-Min, additional, Luo, Hao-Su, additional, and Li, Xiao-Guang, additional

Published
2015
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49. Nonvolatile and Reversible Ferroelectric Control of Electronic Properties of Bi2Te3Topological Insulator Thin Films Grown on Pb(Mg1/3Nb2/3)O3–PbTiO3Single Crystals

Author

Yan, Jian-Min, Xu, Zhi-Xue, Chen, Ting-Wei, Xu, Meng, Zhang, Chao, Zhao, Xu-Wen, Liu, Fei, Guo, Lei, Yan, Shu-Ying, Gao, Guan-Yin, Wang, Fei-Fei, Zhang, Jin-Xing, Dong, Si-Ning, Li, Xiao-Guang, Luo, Hao-Su, Zhao, Weiyao, and Zheng, Ren-Kui

Abstract

Single-phase (00l)-oriented Bi2Te3topological insulator thin films have been deposited on (111)-oriented ferroelectric 0.71Pb(Mg1/3Nb2/3)O3–0.29PbTiO3(PMN–PT) single-crystal substrates. Taking advantage of the nonvolatile polarization charges induced by the polarization direction switching of PMN–PT substrates at room temperature, the carrier density, Fermi level, magnetoconductance, conductance channel, phase coherence length, and quantum corrections to the conductance can be in situ modulated in a reversible and nonvolatile manner. Specifically, upon the polarization switching from the positively poled Pr+state (i.e., polarization direction points to the film) to the negatively poled Pr–(i.e., polarization direction points to the bottom electrode) state, both the electron carrier density and the Fermi wave vector decrease significantly, reflecting a shift of the Fermi level toward the Dirac point. The polarization switching from Pr+to Pr–also results in significant increase of the conductance channel α from −0.15 to −0.3 and a decrease of the phase coherence length from 200 to 80 nm at T= 2 K as well as a reduction of the electron–electron interaction. All these results demonstrate that electric-voltage control of physical properties using PMN–PT as both substrates and gating materials provides a simple and a straightforward approach to realize reversible and nonvolatile tuning of electronic properties of topological thin films and may be further extended to study carrier density-related quantum transport properties of other quantum matter.

Published
2019
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50. An Empirical Study on the Relationship between China's Intellectual Property Rights Protection and FDI.

Author

MA Yun-fei and ZHANG Jin-xing

Subjects
INTELLECTUAL property, COPYRIGHT, FOREIGN investments, INVESTMENT policy, CHINESE economic policy, TWENTY-first century
Abstract

This paper studies the relationship between China's intellectual property rights protection and FDI by means of time-series data, and finds that strong intellectual property protection promotes more FDI inflows to some extent. Meanwhile from the industry level, using industrial patents applications granted classified by international standards, it analyzes the relationship between the levels of intellectual property rights protection and FDI in different industries. The results show that FDI are more sensitive to intellectual property rights protection of those high techs and easily copied industries, while the level of intellectual property rights protection of those low tech industries has less effect on FDI inflow. It finally provides some policy advice. [ABSTRACT FROM AUTHOR]

Published
2010

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