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20 results on '"Zhang, Jiuxiang"'

1. Ultrafast dynamics with time-resolved ARPES: photoexcited electrons in monochalcogenide semiconductors

Author

Chen, Zhesheng, Caillaux, Jonathan, Zhang, Jiuxiang, Papalazarou, Evangelos, Dong, Jingwei, Rueff, Jean-Pascal, Taleb-Ibrahimi, Amina, Perfetti, Luca, and Marsi, Marino

Subjects
Time-resolved ARPES, Monochalcogenide semiconductor, Ultrafast dynamics, Effective mass, Out-of-equilibrium 2D materials, Physics, QC1-999
Abstract

Time-resolved ARPES makes it possible to directly visualize the band dispersion of photoexcited solids, as well as to study its time evolution on the femtosecond time scale. In this article, we show how this technique can be used to monitor the ultrafast hot carrier dynamics and the conduction band dispersion in two typical monochalcogenide semiconductors: direct band gap, $n$-type indium selenide and indirect band gap, $p$-type germanium selenide. With this approach, one can directly estimate the effective electron masses of these semiconductors. Moreover, the dynamics of hot electrons in the two semiconductors are analyzed and compared. Our findings provide valuable information for the use of monochalcogenide semiconductors in future optoelectronic devices.

Published
2021
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2. Direct observation of electronic band gap and hot carrier dynamics in GeAs semiconductor

Author

Zhang, Zailan, Zhang, Jiuxiang, Zhou, Gangqiang, Xu, Jiyuan, Zhang, Xiao, Oughaddou, Hamid, Qi, Weiyan, Papalazarou, Evangelos, Perfetti, Luca, Chen, Zhesheng, Bendounan, Azzedine, and Marsi, Marino

Subjects
Condensed Matter - Materials Science
Abstract

Germanium arsenide (GeAs) is a layered semiconductor with remarkably anisotropic physical, thermoelectric and optical properties, and a promising candidate for multifunctional devices based on in-plane polarization dependent response. Understanding the underlying mechanism of such devices requires the knowledge of GeAs electronic band structure and of the hot carrier dynamics in its conduction band, whose details are still unclear. In this work, we investigated the properties of occupied and photoexcited states of GeAs in energy-momentum space, by combining scanning tunneling spectroscopy (STS), angle-resolved photoemission spectroscopy (ARPES) and time-resolved ARPES. We found that, GeAs is an indirect gap semiconductor having an electronic gap of 0.8 eV, for which the conduction band minimum (CBM) is located at the Gamma point while the valence band maximum (VBM) is out of Gamma. A Stark broadening of the valence band is observed immediately after photoexcitation, which can be attributed to the effects of the electrical field at the surface induced by inhomogeneous screening. Moreover, the hot electrons relaxation time of 1.56 ps down to the CBM which is dominated from both inter-valley and intra-valley coupling. Besides their relevance for our understanding of GeAs, these findings present general interest for the design on high performance thermoelectric and optoelectronic devices based on 2D semiconductors.

Published
2024

11. Manipulating Dirac States in BaNiS2 by Surface Charge Doping

Author

Zhang, Jiuxiang, primary, Sohier, Thibault Daniel Pierre, additional, Casula, Michele, additional, Chen, Zhesheng, additional, Caillaux, Jonathan, additional, Papalazarou, Evangelos, additional, Perfetti, Luca, additional, Petaccia, Luca, additional, Bendounan, Azzedine, additional, Taleb-Ibrahimi, Amina, additional, Santos-Cottin, David, additional, Klein, Yannick, additional, Gauzzi, Andrea, additional, and Marsi, Marino, additional

Published
2023
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12. Two-dimensional fluctuations and competing phases in the stripe-like antiferromagnet BaCoS$_2$

Author

Zhang, Jiuxiang, Chen, Zhesheng, Caillaux, Jonathan, Klein, Yannick, Gauzzi, Andrea, Bendounan, Azzedine, Taleb-Ibrahimi, Amina, Perfetti, Luca, Papalazarou, Evangelos, Marsi, Marino, Laboratoire de Physique des Solides (LPS), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Design et étude de nouveaux matériaux à propriété remarquables [IMPMC] (IMPMC_DEMARE), Institut de minéralogie, de physique des matériaux et de cosmochimie (IMPMC), Muséum national d'Histoire naturelle (MNHN)-Institut de recherche pour le développement [IRD] : UR206-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Muséum national d'Histoire naturelle (MNHN)-Institut de recherche pour le développement [IRD] : UR206-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Laboratoire des Solides Irradiés (LSI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), and ANR-10-LABX-0039,PALM,Physics: Atoms, Light, Matter(2010)

Subjects
[PHYS]Physics [physics], Condensed Matter - Strongly Correlated Electrons, Strongly Correlated Electrons (cond-mat.str-el), FOS: Physical sciences
Abstract

By means of a combined x-ray diffraction, magnetic susceptibility and specific heat study, we investigate the interplay between orthorhombic distortion and stripe-like antiferromagnetic (AFM) order in the Mott insulator BaCoS$_{2}$ at $T_N=290$ K. The data give evidence of a purely electronic AFM transition with no participation of the lattice. The observation of large thermal fluctuations in the vicinity of $T_N$ and a Schottky anomaly unveils competing ground states within a minute $\sim$1 meV energy range that differ in the orbital and spin configurations of the Co ions. This interpretation suggests that the stripe-like order results from a spontaneous symmetry breaking of the geometrically frustrated pristine tetragonal phase, which offers an ideal playground to study the driving force of multi-orbital Mott transitions without the participation of the lattice., 5 pages, 4 figures, Supplemental Information

Published
2023

15. Manipulating Dirac States in BaNiS2 by Surface Charge Doping.

Author

Zhang, Jiuxiang, Sohier, Thibault Daniel Pierre, Casula, Michele, Chen, Zhesheng, Caillaux, Jonathan, Papalazarou, Evangelos, Perfetti, Luca, Petaccia, Luca, Bendounan, Azzedine, Taleb-Ibrahimi, Amina, Santos-Cottin, David, Klein, Yannick, Gauzzi, Andrea, and Marsi, Marino

Published
2023
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18. Manipulating Dirac States in BaNiS2by Surface Charge Doping

Author

Zhang, Jiuxiang, Sohier, Thibault Daniel Pierre, Casula, Michele, Chen, Zhesheng, Caillaux, Jonathan, Papalazarou, Evangelos, Perfetti, Luca, Petaccia, Luca, Bendounan, Azzedine, Taleb-Ibrahimi, Amina, Santos-Cottin, David, Klein, Yannick, Gauzzi, Andrea, and Marsi, Marino

Abstract

In the Dirac semimetal BaNiS2, the Dirac nodes are located along the Γ–M symmetry line of the Brillouin zone, instead of being pinned at fixed high-symmetry points. We take advantage of this peculiar feature to demonstrate the possibility of moving the Dirac bands along the Γ–M symmetry line in reciprocal space by varying the concentration of K atoms adsorbed onto the surface of cleaved BaNiS2single crystals. By means of first-principles calculations, we give a full account of this observation by considering the effect of the electrons donated by the K atom on the charge transfer gap, which establishes a promising tool for engineering Dirac states at surfaces, interfaces, and heterostructures.

Published
2023
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20. Manipulating Dirac States in BaNiS 2 by Surface Charge Doping.

Author

Zhang J, Sohier TDP, Casula M, Chen Z, Caillaux J, Papalazarou E, Perfetti L, Petaccia L, Bendounan A, Taleb-Ibrahimi A, Santos-Cottin D, Klein Y, Gauzzi A, and Marsi M

Abstract

In the Dirac semimetal BaNiS 2 , the Dirac nodes are located along the Γ-M symmetry line of the Brillouin zone, instead of being pinned at fixed high-symmetry points. We take advantage of this peculiar feature to demonstrate the possibility of moving the Dirac bands along the Γ-M symmetry line in reciprocal space by varying the concentration of K atoms adsorbed onto the surface of cleaved BaNiS 2 single crystals. By means of first-principles calculations, we give a full account of this observation by considering the effect of the electrons donated by the K atom on the charge transfer gap, which establishes a promising tool for engineering Dirac states at surfaces, interfaces, and heterostructures.

Published
2023
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