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O2 impurity in the working gas of an He/CF4 atmospheric pressure plasma jet (APPJ) can affect the discharge dynamics and the density of reactive species. Therefore, a two-dimensional (2D) fluid model is built in order to explore the influence of an O2 admixture on the propagation and F-containing species distribution of He/CF4 APPJ. The addition of 0.1% O2 accelerates the ionization rates of APPJ due to the increase of Penning ionization reactions of O2, resulting in the increases of axial speed and F-containing reactive species (CF4+, CF3+, CF2+, CF+, F+, CF3, F, CF3−) when APPJ approaches the dielectric surface. The addition of O2 has the inhibitory effect on the rise of some F-containing reactive species (CF3+ and F). As O2 concentration increases to 2%, the concentration of F-containing reactive species shows a downward trend due to the increase of excitation energy loss and an electron attachment reaction of O2. Different from the axial speed, the radial speed decreases continuously with the increase of O2 because of the high O2 concentration on the dielectric surface when APPJ propagates radially. This also results in a reduced distribution of reactive species fluxes. The excitation energy loss and electronegativity of O2 and CF4 in the case of He + 0.5% CF4 + 0.5% O2 have been presented in this paper. It is discovered that excitation energy loss of O2 is stronger than that of CF4, but the electronegativity of CF4 is stronger than that of O2. [ABSTRACT FROM AUTHOR]

In this paper, a two dimensional (2D) axisymmetric fluid model is built to study the effect of the ratio of CF4 admixture on the plasma dynamics and F-containing species concentration in He atmospheric pressure plasma jet. The steady mole fraction distribution of He and CF4 is first studied, which presents that the mole fractions of CF4 show peaks at 5 mm from the symmetry axis on the dielectric surface due to the dual influences of the boundary layer effect and air mixing. The CF4 admixture enhances the propagation speed of ionization wave, and the axial velocity reaches the peak value in the case of He + 1.5% CF4. The conversion from the ring-shaped plasma–surface interaction to a solid-disk one results from the addition of CF4. The Penning ionization of CF4 accelerates the plasma jet propagation within 1.5% CF4. However, the excitation energy loss and electron attachment caused by the addition of CF4 also quench the propagation of plasma jet, which become obvious in the case of 2% CF4. F-containing groups (CF4+, CF3+, CF3−, F−, CF3, and F), mainly produced by the Penning ionization reaction, electron attachment reaction, and He+ + CF4 → He + CF3+ + F, also show peaks for He + 1.5% CF4. On the dielectric surface, as the radial distance increases, the ratio of F-containing neutral species (CF3 and F) to O atom at 200 ns decreases due to the increase of O atom concentration and then increases at the streamer head because the surface flux of CF3 reaches the maximum value. The maximum surface flux radial distribution distance for ratio of F-containing species to O atom, CF3 and F appear in the case of 1.5% CF4. [ABSTRACT FROM AUTHOR]

Previous studies identified that strigolactones (SLs) and gibberellins (GAs) interacted when controlling branching in plant shoots, but the underlying mechanism remains unknown. qRT-PCR analysis suggested that the SL receptor gene CsDAD2 was significantly upregulated in the leaves, stems, and nodes of cucumber after treatment with 50 mg/L of GA3. Furthermore, the CsDAD2 gene was cloned and introduced into wild-type Arabidopsis plants via Agrobacterium-mediated transformation. For the CsDAD2-OE lines, the endogenous content of GA3 was subsequently higher at the seedling stage, with the number of primary cauline branches also significantly increased at the maturity stage compared with WT. Additionally, GA-related genes were up-regulated in the first inter-nodes and the third nodes of the CsDAD2-OE lines, thus indicating that GA was metabolically active in these tissues. The expression of the branch inhibitor gene AtBRC1 decreased at the seedling stage as well as at the maturity stage of the CsDAD2-OE lines. These findings suggest that CsDAD2 might have important functions in the interactions between GAs and SLs as it can promote the accumulation of GAs in plant nodes and suppress the expression of BRC1, hence increasing primary cauline branching. [ABSTRACT FROM AUTHOR]

CF4 is an important source of fluorine groups in atmospheric pressure plasma jet (APPJ). In order to obtain reactive fluorine species under atmospheric pressure, noble gas (Ar or He) and CF4 are usually mixed and used as the working gas of APPJ. In this paper, the differences in the discharge dynamics on He/CF4 APPJ and Ar/CF4 APPJ are investigated experimentally. Meanwhile, combined with simulation, the effects of downstream targets with different relative permittivity on the radial propagation range of the plasma plume and the distribution of F-containing reactive species are studied. It is discovered that the addition of a small amount of CF4 (20 sccm) will increase the intensity of He/CF4 APPJ due to the contribution of Penning ionization of metastable He with CF4. Differently, the addition of CF4 will continuously lead to a significant decrease in the intensity of Ar/CF4 APPJ. The radial propagation range of He/CF4 APPJ on the target surface decreases with the increase in the relative permittivity of the downstream target. The smaller relative permittivity inhibits the axial propagation speed of APPJ, but it increases the radial propagation range of reactive species. The larger relative permittivity promotes the production of F-containing reactive species and their flux intensity on the target surface. [ABSTRACT FROM AUTHOR]

This letter reports a high drain current density and normally-off operation metal-oxide-semiconductor field-effect transistors (MOSFETs) with a gate insulator of 100 nm-Al2O3. A heavily boron-doped layer as the source/drain region was deposited on a (110) polycrystalline diamond substrate to achieve a low ohmic contact resistance. The MOSFETs demonstrate a maximum current density of −400 mA mm $^{-{1}}$ normalized by gate width and a maximum current density of $- 2000\,\,\mu \text{m}$ mA mm−1 normalized by gate length and gate width, which are the highest values for normally-off diamond FETs. The Grain boundaries (GBs) and the nitrogen impurities ($\sim {3}\,\,\times \,\,{10}^{{17}}$ cm $^{-{3}}$) as ionized donors in the channel region caused the threshold voltage (${V}_{\text {th}}$) to shift in the negative direction, exhibiting normally-off characteristics. This technique provides a promising method to achieve high-performance diamond devices, and help improve safety and save energy in switching systems. [ABSTRACT FROM AUTHOR]

In this paper, the dielectric breakdown properties in SF6/CO2 mixed gas, the development of the streamer in SF6/CO2 mixed gas, and the distribution of each component with time were studied. First, the electron transport parameters (mean energy, longitudinal diffusion coefficients, Townsend coefficient, critical reduced electric field coefficients, and electron energy distribution function) in SF6/CO2 mixtures with different ratios in the E/N range of over 50–1000 Td were obtained by two-term Boltzmann equation analysis. Then, coupled with the Boltzmann drift–diffusion equation and Poisson equation, the hydrodynamic model of discharge of SF6/CO2 mixtures in a strongly non-uniform electric field was established. Many different influence factors are considered, such as the gas mixture ratio, applied voltage, space temperature, space pressure, and electrode structures. The results indicate that the increase in SF6 content in the mixed gas will reduce the ionization rate of the total mixed gas, and therefore, it takes a longer time for breakdown. The higher the pressure, the more concentrated the form of the streamer. As the temperature increases, the shape of the streamer head becomes more scattered, and it loses its contoured shape at about 3000 K; in addition, the existence of the maximum electron number density value appears at the tip of the rod electrode rather than at the streamer head. The simulation also revealed that the dielectric strength of SF6/CO2 mixtures is stronger than that of SF6/N2 mixtures and reached a turning point at an SF6 ratio of 60% under extremely non-uniform electric fields, which agreed well with experiments. [ABSTRACT FROM AUTHOR]