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Temporary changes in electrical resistance of a nanopore sensor caused by translocating target analytes are recorded as a sequence of pulses on current traces. Prevalent algorithms for feature extraction in pulse-like signals lack objectivity because empirical amplitude thresholds are user-defined to single out the pulses from the noisy background. Here, we use deep learning for feature extraction based on a bi-path network (B-Net). After training, the B-Net acquires the prototypical pulses and the ability of both pulse recognition and feature extraction without a priori assigned parameters. The B-Net performance is evaluated on generated datasets and further applied to experimental data of DNA and protein translocation. The B-Net results show remarkably small relative errors and stable trends. The B-Net is further shown capable of processing data with a signal-to-noise ratio equal to one, an impossibility for threshold-based algorithms. The developed B-Net is generic for pulse-like signals beyond pulsed nanopore currents.

V$_3$Si thin films are known to be superconducting with transition temperatures up to 15 K, depending on the annealing temperature and the properties of the substrate underneath. Here we investigate the film structural properties with the prospect of further integration in silicon technology for quantum circuits. Two challenges have been identified: (i) the large difference in thermal expansion rate between V$_3$Si and the Si substrate leads to large thermal strains after thermal processing, and (ii) the undesired silicide phase VSi$_2$ forms when V$_3$Si is deposited on silicon. The first of these is studied by depositing layers of 200 nm V$_3$Si on wafers of sapphire and oxidized silicon, neither of which react with the silicide. These samples are then heated and cooled between room temperature and 860{\deg}C, during which in-situ XRD measurements are performed. Analysis reveals a highly non-linear stress development during heating with contributions from crystallization and subsequent grain growth, as well as the thermal expansion mismatch between silicide and substrate, while the film behaves thermoelastically during cooling. The second challenge is explored by depositing films of 20, 50, 100 and 200 nm of V$_3$Si on bulk silicon. For each thickness, six samples are prepared, which are then annealed at temperatures between 500 and 750{\deg}C, followed by measurements of their resistivity, residual resistance ratio and superconducting critical temperature. A process window is identified for silicide thicknesses of at least 100 nm, within which a trade-off needs to be made between the quality of the V$_3$Si film and its consumption by the formation of VSi$_2$., Comment: 7 pages, 7 figures

Thin films of superconducting V$_3$Si were prepared by means of RF sputtering from a compound V$_3$Si target at room temperature onto sapphire and oxide-coated silicon wafers, followed by rapid thermal processing under secondary vacuum. The superconducting properties of the films thus produced are found to improve with annealing temperature, which is ascribed to a reduction of defects in the polycrystalline layer. Critical temperatures ($T_\text{c}$) up to $15.3\,$K were demonstrated after thermal processing, compared to less than $1\,$K after deposition. The $T_\text{c}$ was found to always be lower on the silicon wafers, by on average $1.9(3)\,$K for the annealed samples. This difference, as well as a broadening of the superconducting transitions, is nearly independent of the annealing conditions. In-situ XRD measurements reveal that the silicide layer becomes strained upon heating due to a mismatch between the thermal expansion of the substrate and that of V$_3$Si. Taking into account the volume reduction due to crystallization, this mismatch is initially larger on sapphire, though stress relaxation allows the silicide layer to be in a relatively unstrained state after cooling. On oxidized silicon however, no clear evidence of relaxation upon cooling is observed, and the V$_3$Si ends up with an out-of-plane strain of 0.3\% at room temperature. This strain increases as the sample is cooled down to cryogenic temperatures, though the deformation of the polycrystalline layer is expected to be highly inhomogeneous. Taking into account also the reported occurrence of a Martensitic transition just above the critical temperature, this extrapolated strain distribution is found to closely match an existing model of the strain dependence of A-15 superconducting compounds., Comment: 7 pages, 5 figures

High-fidelity analysis of translocating biomolecules through nanopores demands shortening the nanocapillary length to a minimal value. Existing nanopores and capillaries, however, inherit a finite length from the parent membranes. Here, we form nanocapillaries of zero depth by dissolving two superimposed and crossing metallic nanorods, thereby opening two overlapping nanofluidic channels molded in a polymeric resin. In an electrolyte, the interface shared by the crossing fluidic channels is mathematically of zero thickness and defines the narrowest constriction in the stream of ions through the nanopore device. This novel architecture provides the possibility to design nanopore fluidic channels, particularly with a robust 3D architecture maintaining the ultimate zero thickness geometry independently of the thickness of the fluidic channels. With orders of magnitude reduced biomolecule translocation speed, and lowered electronic and ionic noise compared to nanopores in 2D materials, our findings establish interfacial nanopores as a scalable platform for realizing nanofluidic systems, capable of single-molecule detection.