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Most dehazing methods suffer from limited receptive field and do not explore the rich semantic prior encapsulated in vision-language models, which have proven effective in downstream tasks. In this paper, we introduce CLIPHaze, a pioneering hybrid framework that synergizes the efficient global modeling of Mamba with the prior knowledge and zero-shot capabilities of CLIP to address both issues simultaneously. Specifically, our method employs parallel state space model and window-based self-attention to obtain global contextual dependency and local fine-grained perception, respectively. To seamlessly aggregate information from both paths, we introduce CLIP-instructed Aggregation Module (CAM). For non-homogeneous and homogeneous haze, CAM leverages zero-shot estimated haze density map and high-quality image embedding without degradation information to explicitly and implicitly determine the optimal neural operation range for each pixel, thereby adaptively fusing two paths with different receptive fields. Extensive experiments on various benchmarks demonstrate that CLIPHaze achieves state-of-the-art (SOTA) performance, particularly in non-homogeneous haze. Code will be publicly after acceptance., Comment: 12 pages, 6 figures

Multiplayer online games are ideal settings for studying the effects of technological disruptions on social behavior. Software patches to online games cause significant changes to the game's rules and require players to develop new strategies to cope with these disruptions. We surveyed players, analyzed the content of software patch notes, and analyzed changes to the character selection behaviors in more than 53 million matches of Dota 2 in the days before and after software patches over a 30-month period. We found that the severity of patches is correlated with the magnitude of behavioral changes following a patch. We discuss the opportunities of leveraging software patches to online games as a valuable but overlooked empirical instrument for measuring behavioral dynamics.

High perpendicular magnetic anisotropy (PMA), a property needed for nanoscale spintronic applications, is rare in oxide conductors. We report the observation of a PMA up to 0.23 MJ/m3 in modestly strained epitaxial NiCo2O4 (NCO) films which are room-temperature ferrimagnetic conductors. Spin-lattice coupling manifested as magnetoelastic effect was found as the origin of the PMA. The in-plane xx-yy states of Co on tetrahedral sites play crucial role in the magnetic anisotropy and spin-lattice coupling with an energy scale of 1 meV/f.u. The elucidation of the microscopic origin paves a way for engineering oxide conductors for PMA using metal/oxygen hybridizations.

Despite the low resistivity (~ 1 mohm cm), the metallic electrical transport has not been commonly observed in the inverse spinel NiCo2O4, except in certain epitaxial thin films. Previous studies have stressed the effect of valence mixing and degree of spinel inversion on the electric conduction of NiCo2O4 films. In this work, we have studied the effect of microstructure by comparing the NiCo2O4 epitaxial films grown on MgAl2O4 (111) and on Al2O3 (0001) substrates. Although the optimal growth condition and the magnetic properties are similar for the NiCo2O4/MgAl2O4 and the NiCo2O4/Al2O3, they show metallic and semiconducting electrical transport respectively. Despite similar temperature and field dependence of magnetization, the NiCo2O4/Al2O3 show much larger magnetoresistance at low temperature. Post-growth annealing decreases the resistivity of NiCo2O4/Al2O3, but the annealed films are still semiconducting. The correlation between the structural correlation length and the resistivity suggests that the microstructural disorder, generated by the dramatic mismatch between the NiCo2O4 and Al2O3 crystal structures, may be the origin of the absence of the metallic electrical transport in NiCo2O4. These results reveal microstructural disorder as another key factor in controlling the electrical transport of NiCo2O4, with potentially large magnetoresistance for spintronics application.

The magnetic interaction between rare-earth and Fe ions in hexagonal rare-earth ferrites (h-REFeO3), may amplify the weak ferromagnetic moment on Fe, making these materials more appealing as multiferroics. To elucidate the interaction strength between the rare-earth and Fe ions as well as the magnetic moment of the rare-earth ions, element specific magnetic characterization is needed. Using X-ray magnetic circular dichroism, we have studied the ferrimagnetism in h-YbFeO3 by measuring the magnetization of Fe and Yb separately. The results directly show anti-alignment of magnetization of Yb and Fe ions in h-YbFeO3 at low temperature, with an exchange field on Yb of about 17 kOe. The magnetic moment of Yb is about 1.6 \muB at low-temperature, significantly reduced compared with the 4.5 \muB moment of a free Yb3+. In addition, the saturation magnetization of Fe in h-YbFeO3 has a sizable enhancement compared with that in h-LuFeO3. These findings directly demonstrate that ferrimagnetic order exists in h-YbFeO3; they also account for the enhancement of magnetization and the reduction of coercivity in h-YbFeO3 compared with those in h-LuFeO3 at low temperature, suggesting an important role for the rare-earth ions in tuning the multiferroic properties of h-REFeO3.

We have carried out the growth of h-RFeO3 (001) (R=Lu, Yb) thin films on Fe3O4 (111)/Al2O3 (001) substrates, and studied the effect of the h-RFeO3 (001)/Fe3O4 (111) interfaces on the epitaxy and magnetism. The observed epitaxial relations between h-RFeO3 and Fe3O4 indicates an unusual matching of Fe sub-lattices rather than a matching of O sub-lattices. The out-of-plane direction was found to be the easy magnetic axis for h-YbFeO3 (001) but the hard axis for Fe3O4 (111) in the h-YbFeO3 (001)/Fe3O4 (111)/Al2O3 (001) films, suggesting a perpendicular magnetic alignment at the h-YbFeO3 (001)/Fe3O4 (111) interface. These results indicate that Fe3O4 (111)/Al2O3 (001) could be a promising substrate for epitaxial growth of h-RFeO3 films of well-defined interface and for exploiting their spintronic properties.

Elastic strain is potentially an important approach in tuning the properties of the improperly multiferroic hexagonal ferrites, the details of which have however been elusive due to the experimental difficulties. Employing the method of restrained thermal expansion, we have studied the effect of isothermal biaxial strain in the basal plane of h-LuFeO3 (001) films. The results indicate that a compressive biaxial strain significantly enhances the ferrodistortion, and the effect is larger at higher temperatures. The compressive biaxial strain and the enhanced ferrodistortion together, cause an increase in the electric polarization and a reduction in the canting of the weak ferromagnetic moments in h-LuFeO3, according to our first principle calculations. These findings are important for understanding the strain effect as well as the coupling between the lattice and the improper multiferroicity in h-LuFeO3. The experimental elucidation of the strain effect in h-LuFeO3 films also suggests that the restrained thermal expansion can be a viable method to unravel the strain effect in many other epitaxial thin film materials.

Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages >=20 nm, quasi 2D and polycrystalline films, with an average grain size of 50-100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

The structural transition at about 1000 {\deg}C, from the hexagonal to the orthorhombic phase of LuFeO3, has been investigated in thin films of LuFeO3. Separation of the two structural phases of LuFeO3 occurs on a length scale of micrometer, as visualized in real space using X-ray photoemission electron microscopy (X-PEEM). The results are consistent with X-ray diffraction and atomic force microscopy obtained from LuFeO3 thin films undergoing the irreversible structural transition from the hexagonal to the orthorhombic phase of LuFeO3, at elevated temperatures. The sharp phase boundaries between the structural phases are observed to align with the crystal planes of the hexagonal LuFeO3 phase. The coexistence of different structural domains indicates that the irreversible structural transition, from the hexagonal to the orthorhombic phase in LuFeO3, is a first order transition, for epitaxial hexagonal LuFeO3 films grown on Al2O3.

Electronic structures for the conduction bands of both hexagonal and orthorhombic LuFeO3 thin films have been measured using x-ray absorption spectroscopy at oxygen K (O K) edge. Dramatic differences in both the spectra shape and the linear dichroism are observed. These differences in the spectra can be explained using the differences in crystal field splitting of the metal (Fe and Lu) electronic states and the differences in O 2p-Fe 3d and O 2p-Lu 5d hybridizations. While the oxidation states has not changed, the spectra are sensitive to the changes in the local environments of the Fe3+ and Lu3+ sites in the hexagonal and orthorhombic structures. Using the crystal-field splitting and the hybridizations that are extracted from the measured electronic structures and the structural distortion information, we derived the occupancies of the spin minority states in Fe3+, which are non-zero and uneven. The single ion anisotropy on Fe3+ sites is found to originate from these uneven occupancies of the spin minority states via spin-orbit coupling in LuFeO3.

We have studied the growth of Fe3O4 (111) epitaxial films on Al2O3 (001) substrates using a pulsed laser deposition / thermal reduction cycle using an {\alpha}-Fe2O3 target. While direct deposition onto the Al2O3 (001) substrates results in an {\alpha}-Fe2O3 epilayer, deposition on the Fe3O4 (111) surface results in a {\gamma}-Fe2O3 epilayer. The kinetics of the transitions between Fe2O3 and Fe3O4 were studied by measuring the time constants of the transitions. The transition from {\alpha}-Fe2O3 to Fe3O4 via thermal reduction turns out to be very slow, due to the high activation energy. Despite the significant grain boundaries due to the mismatch between the unit cells of the film and the substrate, the Fe3O4 (111) films grown from deposition/thermal reduction show high crystallinity.