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Women in films are portrayed as the “ Others”, the victims of a patriarchal society and a vulnerable group, and since the 1970s, the image of women in Chinese films has shifted from the traditional “virtuous wife and mother” to the “Others”. This paper analyses the images of women in minority films in the new period from three perspectives: ethnic consciousness, traditional and modern factors, and social transformation.

The PEBP gene family is involved in many biological processes in plants, including plant growth and development, flowering regulation, light response, and abiotic stress response. But there is little information about the role of the PEBP gene family in Cymbidium species. In this study, we identified 11, 9, and 7 PEBP genes in C. ensifolium, C. sinense, and C. goeringii, respectively, and mapped them to the chromosomes. We also studied the physicochemical characteristics of the proteins encoded by these PEBPs and analyzed their intra-species collinearity, gene structure, conserved motifs, and cis-acting elements. Furthermore, a total of forty PEBP genes from C. sinense, C. ensifolium, C. goeringii, Phalaenopsis, and Arabidopsis were divided into three clades based on the phylogenetic tree. The expression patterns of 11 PEBP genes in different tissues and organs of C. ensifolium were analyzed based on transcriptome data, indicating that the CePEBPs might play an important role in the growth and development, especially in the flower bud organs (1–5 mm). CePEBP5 plays an indispensable role in both the vegetative and reproductive growth cycles of C. ensifolium. CePEBP1 is essential for root development, while CePEBP1, CePEBP3, CePEBP5, and CePEBP10 regulate the growth and development of different floral organ tissues at various stages. The findings of this study can do a great deal to understand the roles of the PEBP gene family in Cymbidium. [ABSTRACT FROM AUTHOR]

Ge/Si(100) islands were found to coarsen during in situ annealing at growth temperature. Islands were grown by molecular-beam epitaxy of pure Ge and annealed at substrate temperatures of T = 450, 550, 600, and 650°C, with Ge coverages of 6.5, 8.0, and 9.5 monolayers. Three coarsening mechanisms operate in this temperature range: wetting-layer consumption, conventional Ostwald ripening, and Si interdiffusion. For samples grown and annealed at T = 450°C, consumption of a metastably thick wetting layer causes rapid initial coarsening. Slower coarsening at longer annealing times occurs by conventional Ostwald ripening. Coarsening of samples grown and annealed at T = 550°C occurs via a combination of Si interdiffusion and conventional Ostwald ripening. For samples grown and annealed at T ⩾ 600°C, Ostwald ripening of SiGe alloy clusters appears to be the dominant coarsening mechanism. [ABSTRACT FROM AUTHOR]

Annealing molecular beam epitaxy grown Ge/Si(100) islands spontaneously forms quantum dot molecules and rings. Quantum dot molecules (QDM) are close-packed arrays of several SiGe alloy hut clusters arranged with rectangular or circular symmetry. Rings are 3D structures with a depressed center. Both of these structures are related to island ensemble coarsening. Si interdiffusion into the perimeter of nominally pure Ge dome clusters forms a Si-rich annulus surrounding a Ge rich core. This lower melting point core diffuses away during coarsening of the island ensemble leaving behind the QDM. Large ring structures are formed by rapid coarsening of large, dislocated clusters during high temperature anneals. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]