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Your search keyword '"Zhao, Ming-Jie"' showing total 159 results
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159 results on '"Zhao, Ming-Jie"'

5. Collision-Free Trajectory Design for 2D Persistent Monitoring Using Second-Order Agents

Author

Wang, Yan-Wu, Zhao, Ming-Jie, Yang, Wu, Zhou, Nan, and Cassandras, Christos G.

Subjects
Mathematics - Optimization and Control
Abstract

This paper considers a two-dimensional persistent monitoring problem by controlling movements of second-order agents to minimize some uncertainty metric associated with targets in a dynamic environment. In contrast to common sensing models depending only on the distance from a target, we introduce an active sensing model which considers the distance between an agent and a target, as well as the agent's velocity. We propose an objective function which can achieve a collision-free agent trajectory by penalizing all possible collisions. Applying structural properties of the optimal control derived from the Hamiltonian analysis, we limit agent trajectories to a simpler parametric form under a family of 2D curves depending on the problem setting, e.g. ellipses and Fourier trajectories. Our collision-free trajectories are optimized through an event-driven Infinitesimal Perturbation Analysis (IPA) and gradient descent method. Although the solution is generally locally optimal, this method is computationally efficient and offers an alternative to other traditional time-driven methods. Finally, simulation examples are provided to demonstrate our proposed results., Comment: 13 pages arXiv, to be published in IEEE Transactions on Control of Network Systems

Published
2019

28. Indium-free GZO thin films prepared using plasma-enhanced atomic layer deposition: toward thin film transistor application.

Author

Shi, Chun-Yan, Chen, Qi-Zhen, Zhang, Zhi-Xuan, Hsu, Chia-Hsun, Zhao, Ming-Jie, Zhang, Xiao-Ying, Gao, Peng, Wu, Wan-Yu, Wuu, Dong-Sing, Huang, Chien-Jung, Lien, Shui-Yang, and Zhu, Wen-Zhang

Abstract

Indium–gallium–zinc oxide (IGZO) is regarded as one of the most promising materials to meet the requirements of thin film transistors (TFTs). However, the high cost and environmental danger of indium limit its commercial application. Moreover, the quaternary compound cannot be easily made using thin-film deposition. In this work, GZO thin films without indium have been prepared as a channel layer in TFTs using plasma-enhanced atomic layer deposition (PEALD). The cycle ratio of Ga2O3 to ZnO was varied to investigate its impact on the film properties. The GZO films were examined using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), Hall-effect probe measurement and UV-visible spectroscopy. The results of the GZO thin film with 7.5% Ga2O3 cycle ratio showed a low carrier concentration of 1.37 × 1017 cm−3 and Hall mobility of 10.67 cm2 V−1 s−1. The structural characteristics and electrical characteristics of the GZO channel layer well-align with this conclusion. The Ion/Ioff ratio and mobility of TFT based on 7.5% cycle ratio GZO are 1.33 × 106 and 2.6 cm2 V−1 s−1, respectively. In this study, the indium-free GZO thin film deposited using PEALD demonstrates great potential for TFT applications. [ABSTRACT FROM AUTHOR]

Published
2022
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39. Substrate temperature-controlled precursor reaction mechanism of PEALD-deposited MoOx thin films.

Author

Wang, Chen, Bao, Chun-Hui, Wu, Wan-Yu, Hsu, Chia-Hsun, Zhao, Ming-Jie, Zhang, Xiao-Ying, Lien, Shui-Yang, and Zhu, Wen-Zhang

Subjects
THIN films, ATOMIC layer deposition, MOLYBDENUM oxides, TEMPERATURE effect
Abstract

Molybdenum oxide (MoOx) films had been grown by using plasma-enhanced atomic layer deposition (PEALD) with Mo(CO)6 precursor and O2 plasma reactant in a substrate temperature range of 150–275 °C. The effect of substrate temperature on the chemical, optical, surface morphological, and structural properties of the MoOx thin films was explored systematically. The substrate temperature performed a significant role in depositing MoOx films and three kinds of different precursor reaction mechanisms of PEALD-MoOx thin films handled by substrate temperature were presented firstly and illustrated comprehensively. The growth of amorphous MoOx film was observed between 150 and 175 °C. Moreover, an obvious transition to polycrystalline deposition was demonstrated for the deposition temperatures at 225 °C and higher. Both Mo6+ and Mo5+ valence states existed in all prepared MoOx films, which inferred the deficient lattice oxygen in the films. And the proportion of non-lattice oxygen reduced with the increasing deposition temperature. The elaboration of deposition mechanism of PEALD-MoOx films provides a guideline for the preparation of high-quality MoOx films. [ABSTRACT FROM AUTHOR]

Published
2022
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