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10 results on '"Zhao, Simeng E."'

1. Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs

Author

Li, Kan, primary, Zhang, En Xia, additional, Gorchichko, Mariia, additional, Wang, Peng Fei, additional, Reaz, Mahmud, additional, Zhao, Simeng E., additional, Hiblot, Gaspard, additional, Van Huylenbroeck, Stefaan, additional, Jourdain, Anne, additional, Alles, Michael L., additional, Reed, Robert A., additional, Fleetwood, Daniel M., additional, and Schrimpf, Ronald D., additional

Published
2021
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3. Total-Ionizing-Dose Effects on InGaAs FinFETs With Modified Gate-stack

Author

Zhao, Simeng E., primary, Bonaldo, Stefano, additional, Wang, Pengfei, additional, Zhang, En Xia, additional, Waldron, Niamh, additional, Collaert, Nadine, additional, Putcha, Vamsi, additional, Linten, Dimitri, additional, Gerardin, Simone, additional, Paccagnella, Alessandro, additional, Schrimpf, Ronald D., additional, Reed, Robert A., additional, and Fleetwood, Daniel M., additional

Published
2020
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4. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2Gate Dielectrics

Author

Gorchichko, Mariia, primary, Cao, Yanrong, additional, Zhang, En Xia, additional, Yan, Dawei, additional, Gong, Huiqi, additional, Zhao, Simeng E., additional, Wang, Pan, additional, Jiang, Rong, additional, Liang, Chundong, additional, Fleetwood, Daniel M., additional, Schrimpf, Ronald D., additional, Reed, Robert A., additional, and Linten, Dimitri, additional

Published
2020
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5. Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics

Author

Bonaldo, Stefano, primary, Putcha, Vamsi, additional, Linten, Dimitri, additional, Pantelides, Sokrates T., additional, Reed, Robert A., additional, Schrimpf, Ronald D., additional, Fleetwood, Daniel M., additional, Zhao, Simeng E., additional, O'Hara, Andrew, additional, Gorchichko, Mariia, additional, Zhang, En Xia, additional, Gerardin, Simone, additional, Paccagnella, Alessandro, additional, Waldron, Niamh, additional, and Collaert, Nadine, additional

Published
2020
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6. Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Author

Zhao, Simeng E., primary, Bonaldo, Stefano, additional, Wang, Pan, additional, Jiang, Rong, additional, Gong, Huiqi, additional, Zhang, En Xia, additional, Waldron, Niamh, additional, Kunert, Bernardette, additional, Mitard, Jerome, additional, Collaert, Nadine, additional, Sioncke, Sonja, additional, Linten, Dimitri, additional, Schrimpf, Ronald D., additional, Reed, Robert A., additional, Gerardin, Simone, additional, Paccagnella, Alessandro, additional, and Fleetwood, Daniel M., additional

Published
2019
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7. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics.

Author

Gorchichko, Mariia, Fleetwood, Daniel M., Schrimpf, Ronald D., Reed, Robert A., Linten, Dimitri, Cao, Yanrong, Zhang, En Xia, Yan, Dawei, Gong, Huiqi, Zhao, Simeng E., Wang, Pan, Jiang, Rong, and Liang, Chundong

Subjects
THRESHOLD voltage, RADIATION tolerance, NOISE, DIELECTRICS, RANDOM noise theory, GATES
Abstract

Total-ionizing-dose (TID) effects and low-frequency noise are evaluated in 30-nm gate-length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10–40 nm. Minimal threshold voltage shifts are observed at 2 Mrad(SiO2), but large increases in low-frequency noise are found, and significant changes in defect-energy distributions are inferred. Radiation-induced leakage current is enhanced for narrow- and short-channel bulk FinFETs. Short-channel SOI FinFETs show enhanced degradation compared with longer-channel devices. Narrow- and short-channel SOI devices exhibit high radiation tolerance. Significant random telegraph noise (RTN) is observed in smaller devices due to prominent individual defects. [ABSTRACT FROM AUTHOR]

Published
2020
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8. Total-Ionizing-Dose Effects on Al/SiO2 Bimorph Electrothermal Microscanners

Author

Liao, Wenjun, primary, Zhang, En Xia, additional, Alles, Michael L., additional, Sternberg, Andrew L., additional, Arutt, Charles N., additional, Wang, Dingkang, additional, Zhao, Simeng E., additional, Wang, Pan, additional, McCurdy, Michael W., additional, Xie, Huikai, additional, Fleetwood, Daniel M., additional, Reed, Robert A., additional, and Schrimpf, Ronald D., additional

Published
2018
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10. Capacitance–Frequency Estimates of Border-Trap Densities in Multifin MOS Capacitors

Author

Zhao, Simeng E., primary, Jiang, Rong, additional, Zhang, En Xia, additional, Liao, Wenjun, additional, Liang, Chundong, additional, Fleetwood, Daniel M., additional, Schrimpf, Ronald D., additional, Reed, Robert A., additional, Linten, Dimitri, additional, Mitard, Jerome, additional, Collaert, Nadine, additional, Sioncke, Sonja, additional, and Waldron, Niamh, additional

Published
2018
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