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Your search keyword '"Zhao, Weisheng S."' showing total 6 results
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6 results on '"Zhao, Weisheng S."'

1. Poisson's process in the propagation of magnetic domain wall in perpendicularly magnetized film

Author

Xing, Tao, Vernier, Nicolas, Zhang, Xueying Y., Zhang, Y. G., and Zhao, Weisheng S.

Subjects
Condensed Matter - Strongly Correlated Electrons
Abstract

We present here a statistical study of the transit time required for a magnetic domain wall to go through a small laser spot focused on 2D magnetic thin film. The domain wall velocity deduced this way is in good agreement with the other ways used to measure this parameter. But, the main fact is that the transit time is not a reproducible parameter, we have observed a quite large distribution of this parameter. This distribution can be explained assuming the movement to occur through jumps, whose probabilities are given by a Poisson's process. The fitting of this distribution has enabled us to get the required number of jumps to reverse the magnetization of the small area under the laser spot. This important parameter should lead to a better understanding of the creep regime.

Published
2023

2. Field-free spin orbit torque switching of synthetic antiferromagnet through interlayer Dzyaloshinskii-Moriya interaction

Author

Wang, Zilu, Li, Pingzhi, Yao, Yuxuan, van Hees, Youri L.W., Schippers, Casper F., Lavrijsen, Reinoud, Fert, Albert, Zhao, Weisheng S., Koopmans, Bert, Physics of Nanostructures, ICMS Affiliated, Center for Care & Cure Technology Eindhoven, EIRES, and Eindhoven Hendrik Casimir institute

Subjects
FOS: Physical sciences, Condensed Matter::Strongly Correlated Electrons, Physics - Applied Physics, Applied Physics (physics.app-ph)
Abstract

Perpendicular synthetic antiferromagnets (SAFs) are of interest for the next generation ultrafast, high density spintronic memory and logic devices. However, to energy efficiently operate their magnetic order by current-induced spin orbit torques (SOTs), an unfavored high external field is conventionally required to break the symmetry. Here, we theoretically and experimentally demonstrate the field-free SOT switching of a perpendicular SAF through the introduction of interlayer Dzyaloshinskii-Moriya interaction (DMI). By macro-spin simulation, we show that the speed of field-free switching increases with the in-plane mirror asymmetry of injected spins. We experimentally observe the existence of interlayer DMI in our SAF sample by an azimuthal angular dependent anomalous Hall measurement. Field-free switching is accomplished in such a sample and the strength of the effective switching field demonstrates its origin from interlayer DMI. Our results provide a new strategy for SAF based high performance SOT devices.

Published
2022
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